Quantum dots, a composition or composite including the same, and an electronic device including the same

Patent metadata

Field	Value
Publication number	US-2019367804-A1
Application number	US-201916431772-A
Country	US
Kind code	A1
Filing date	Jun 5, 2019
Priority date	Jun 5, 2018
Publication date	Dec 5, 2019
Grant date	—

Abstract

The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

First claim

What is claimed is:

1 . A quantum dot comprising a core comprising a quaternary alloy semiconductor nanocrystal,
wherein the quantum dot does not comprise cadmium, wherein the quaternary alloy semiconductor nanocrystal comprises indium, phosphorous, zinc, and selenium, in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

2 . The quantum dot of claim 1 , wherein in the core, the ratio of zinc with respect to indium is less than or equal to about 0.45:1 and in the core, and the ratio of selenium with respect to zinc is less than or equal to about 0.51:1.

3 . The quantum dot of claim 1 , wherein the core has a first absorption peak wavelength of less than or equal to about 460 nanometers in an ultraviolet-visible absorption spectrum of the core.

4 . The quantum dot of claim 1 , wherein the quaternary alloy semiconductor nanocrystal comprises a homogeneous alloy.

5 . The quantum dot of claim 1 , wherein the core has a size of greater than or equal to about 2 nanometers.

6 . The quantum dot of claim 1 , wherein in the core, a mole ratio of a total sum of the zinc and the selenium with respect to a total sum the indium and the phosphorous is greater than or equal to about 0.2:1 and less than or equal to about 0.65:1.

7 . The quantum dot of claim 1 , wherein the quantum dot has a semiconductor nanocrystal shell on the core and the semiconductor nanocrystal shell comprises zinc, selenium, and sulfur.

8 . The quantum dot of claim 1 , wherein the semiconductor nanocrystal shell comprises a first layer disposed directly on the core and a second layer disposed on the first layer, the first layer comprising a first semiconductor nanocrystal, and the second layer comprising a second semiconductor nanocrystal having a composition different from a composition of the first semiconductor nanocrystal.

9 . The quantum dot of claim 8 , wherein an energy bandgap of the second semiconductor nanocrystal is greater than or equal to an energy bandgap of the first semiconductor nanocrystal.

10 . The quantum dot of claim 8 , wherein the first semiconductor nanocrystal comprises zinc, selenium, and optionally sulfur, and the second semiconductor nanocrystal comprises zinc and sulfur and does not comprise selenium.

11 . The quantum dot of claim 8 , wherein a thickness of the first layer is greater than or equal to about 3 monolayers and less than or equal to about 10 monolayers.

12 . The quantum dot of claim 8 , wherein the second layer is an outermost layer of the quantum dot.

13 . The quantum dot of claim 8 , wherein a thickness of the second layer is greater than or equal to about 1 monolayer and less than or equal to about 10 monolayers.

14 . The quantum dot of claim 7 , wherein a maximum photoluminescence peak of the quantum dot is in a range of from about 500 nanometers to about 580 nanometers.

15 . The quantum dot of claim 7 , wherein a maximum photoluminescence peak of the quantum dot has a full width at half maximum of less than or equal to about 45 nanometers.

16 . The quantum dot of claim 7 , wherein a quantum efficiency of the quantum dots is greater than or equal to about 70%.

17 . A method of producing a quantum dot of claim 1 , which comprises:
preparing a reaction liquid comprising an organic ligand, an indium precursor, a zinc precursor, a selenium precursor, and a phosphorous precursor in an organic solvent; and conducting a reaction in the reaction liquid at a temperature of about greater than or equal to about 290° C. for a time period of less than or equal to about 1 hour to obtain a core comprising a quaternary alloy semiconductor nanocrystal.

18 . The method of claim 17 , wherein preparing the reaction liquid comprises mixing the indium precursor and the zinc precursor in the organic solvent in the presence of the organic ligand to obtain a mixture; heating the mixture at a temperature of about 150° C. and 220° C. to obtain a heated mixture; and adding the selenium precursor and the phosphorous precursor to the heated mixture.

19 . The method of claim 17 , wherein the reaction liquid does not comprise an alkyl thiol.

20 . A composition, comprising:
the quantum dot of claim 1 , a dispersing agent for the quantum dot, a polymerizable monomer comprising a carbon-carbon double bond; a photoinitiator, and a solvent.

21 . The composition of claim 20 , wherein the dispersing agent comprises a carboxylic acid group containing binder polymer, and
the carboxylic acid group containing binder polymer comprises: a copolymer of a monomer mixture comprising a first monomer comprising a carboxylic acid group and a carbon-carbon double bond, a second monomer comprising a carbon-carbon double bond and a hydrophobic moiety and not comprising a carboxylic acid group, and optionally a third monomer comprising a carbon-carbon double bond and a hydrophilic moiety and not comprising a carboxylic acid group; a multiple aromatic ring-containing polymer having a backbone structure in which two aromatic rings are bound to a quaternary carbon atom that is a constituent atom of another cyclic moiety in a main chain of the backbone structure, the multiple aromatic ring-containing polymer comprising a carboxylic acid group (—COOH); or a combination thereof.

22 . The composition of claim 21 , wherein the carboxylic acid containing binder polymer has an acid value of greater than or equal to about 50 milligrams of potassium hydroxide per gram and less than or equal to about 240 milligrams of potassium hydroxide per gram

23 . The composition of claim 21 , wherein the composition further comprises a thiol compound including a thiol group at a terminal end of the thiol compound, a metal oxide fine particle, or a combination thereof.

24 . The composition of claim 23 , wherein
the metal oxide fine particles comprises TiO 2 , SiO 2 , BaTiO 3 , Ba 2 TiO 4 , ZnO, or a combination thereof, and wherein the thiol compound comprises a compound represented by Chemical Formula 1:

wherein,
R 1 is hydrogen; a substituted or unsubstituted C1 to C30 linear or branched alkyl group; a substituted or unsubstituted C6 to C30 aryl group; a substituted or unsubstituted C3 to C30 heteroaryl group; a substituted or unsubstituted C3 to C30 cycloalkyl group; a substituted or unsubstituted C3 to C30 heterocycloalkyl group; a C1 to C10 alkoxy group; a hydroxy group; —NH 2 ; a substituted or unsubstituted C1 to C30 amine group, wherein —NRR′, wherein R and R′ are independently hydrogen or C1 to C30 linear or branched alkyl group, but simultaneously not hydrogen; an isocyanate group; a halogen; —ROR′, wherein R is a substituted or unsubstituted C1 to C20 alkylene group and R′ is hydrogen or a C1 to C20 linear or branched alkyl group; an acyl halide, wherein —RC(═O)X, wherein R is a substituted or unsubstituted alkylene group and X is a halogen; —C(═O)OR′, wherein R′ is hydrogen or a C1 to C20 linear or branched alkyl group; —CN; —C(═O)NRR′, wherein R and R′ are independently hydrogen or a C1 to C20 linear or branched alkyl group; —C(═O)ONRR′, wherein R and R′ are independently hydrogen or a C1 to C20 linear or branched alkyl group; or a combination thereof,
L 1 is a carbon atom, a substituted or uns

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwon Soo Kyung
• Kim Yong Wook
• MIN Jihyun
• Jang Eun Joo

Classifications

• C09K11/623

  with zinc or cadmium · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title