Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Patent metadata

Field	Value
Publication number	US-2019348273-A1
Application number	US-201916397045-A
Country	US
Kind code	A1
Filing date	Apr 29, 2019
Priority date	May 8, 2018
Publication date	Nov 14, 2019
Grant date	—

Abstract

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

First claim

What is claimed is:

1 . A method for depositing an oxide film on a substrate by a cyclical deposition process, the method comprising:
depositing a metal oxide film on the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process, and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process.

2 . The method of claim 1 , wherein the at least one deposition cycle of the first sub-cycle comprises:
contacting the substrate with a metal vapor phase precursor; and contacting the substrate with an oxygen precursor.

3 . The method of claim 2 , wherein the metal vapor phase precursor comprises a metal selected from the group comprising: aluminum (Al), hafnium (Hf), magnesium (Mg), strontium (Sr), yttrium (Y), titanium (Ti), lanthanum (La), erbium (Er), zirconium (Zr), scandium (Sc), cerium (Ce), ytterbium (Yb), and tantalum (Ta).

4 . The method of claim 2 , wherein the metal vapor phase precursor comprises an aluminum vapor phase precursor.

5 . The method of claim 4 , wherein the aluminum vapor phase precursor comprises at least one of: trimethylaluminum (TMA), triethylaluminum (TEA), aluminum trichloride (AlCl 3 ), or dimethylaluminum hydride (DMAH).

6 . The method of claim 2 , wherein the oxygen precursor comprises at least one of: water (H 2 O), hydrogen peroxide (H 2 O 2 ), ozone (O 3 ), an oxide of nitrogen, or an organic alcohol.

7 . The method of claim 1 , wherein the metal oxide film comprises at least one of: an aluminum oxide, a hafnium oxide, a magnesium oxide, a strontium oxide, an yttrium oxide, a titanium oxide, a lanthanum oxide, an erbium oxide, a zirconium oxide, a cerium oxide, an ytterbium oxide, a scandium oxide, or a tantalum oxide.

8 . The method of claim 1 , wherein the metal oxide film is deposited utilizing one deposition cycle of the first sub-cycle.

9 . The method of claim 1 , wherein the metal oxide film comprises less than a single monolayer of the metal oxide.

10 . The method of claim 1 , wherein the metal oxide film has a thickness of less than 2 Angstroms.

11 . The method of claim 1 , wherein the at least one deposition cycle of the second sub-cycle comprises:
contacting the substrate with a silicon vapor phase precursor; and contacting the substrate with a hydrogen peroxide (H 2 O 2 ) vapor precursor.

12 . The method of claim 11 , wherein the silicon vapor phase precursor comprises at least one of: silanediamine N,N,N′,N-tetraethyl (C 8 H 22 N 2 Si), BTBAS (bis(tertiarybutylamino)silane), BDEAS (bis(diethylamino)silane), TDMAS (tris(dimethylamino)silane), hexakis(ethylamino)disilane (Si 2 (NHC 2 H 5 ) 6 ), silicon tetraiodide (SiI 4 ), silicon tetrachloride (SiCl 4 ), hexachlorodisilane (HCDS), pentachlorodisilane (PCDS), or a silane.

13 . The method of claim 1 , wherein the second sub-cycle is performed for less than 30 deposition cycles.

14 . The method of claim 1 , wherein the growth rate of the silicon oxide film decreases with each successive deposition cycle of the second sub-cycle.

15 . The method of claim 1 , wherein the silicon oxide film has a thickness of less than 20 Angstroms.

16 . The method of claim 1 , wherein the oxide film is deposited in a plasma-free environment.

17 . The method of claim 1 , wherein the metal oxide is deposited without plasma excitation of precursors.

18 . The method of claim 1 , wherein the silicon oxide is deposited without plasma excitation of precursors.

19 . The method of claim 16 , wherein the oxide film has a density greater than 2.1 g/cm 3 .

20 . The method of claim 16 , wherein the oxide film has a wet etch rate ratio (WERR) in dilute hydrofluoric acid (1:100) of less than 2.

21 . The method of claim 1 , further comprising heating the substrate to a substrate temperature of less than 500° C.

22 . The method of claim 1 , wherein the cyclical deposition process comprises repeating a step of depositing the metal oxide film and repeating a step of depositing the silicon oxide film one or more times.

23 . The method of claim 1 , wherein the substrate comprises one or more trench structures with an aspect ratio of greater than 10:1 and the oxide film is deposited over the one or more trench structures with a step coverage greater than approximately 99%.

24 . The method of claim 23 , wherein the oxide film deposited over the one or more trench structures comprises a sidewall portion and a lateral portion, wherein a wet etch rate ratio (WERR) of the sidewall portion and the lateral portion are substantially equal.

25 . The method of claim 1 , wherein the oxide film is deposited to a thickness of less than 200 Angstroms.

26 . The method of claim 1 , wherein the cyclical deposition is performed in a single reaction chamber.

27 . The method of claim 1 , wherein the cyclical deposition is performed in two or more reaction chambers integrated on a single cluster tool.

28 . A semiconductor device structure including the oxide film deposited by the method of claim 1 .

29 . A reaction system configured to perform the method of claim 1 .

Assignees

• Asm Ip Holding Bv

Inventors

• Tang Fu
• Longrie Delphine
• Hsu Peng-Fu

Classifications

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45529

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• C23C16/401

  containing silicon · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title