Apparatuses and systems for embedded thermoelectric generators
US-9203010-B2 · Dec 1, 2015 · US
US2019334071A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019334071-A1 |
| Application number | US-201816462179-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 5, 2018 |
| Priority date | Jun 7, 2017 |
| Publication date | Oct 31, 2019 |
| Grant date | — |
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A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0<x<0.5.
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1 . A chalcogen-containing compound represented by the following Chemical Formula 1: V 1-2x Sn 4 Bi 2-x Ag 3x Se 7 [Chemical Formula 1] wherein, in the above Chemical Formula 1, V is vacancy and 0<x<0.5. 2 . The chalcogen-containing compound of claim 1 , wherein x is 0.05≤x≤0.4. 3 . The chalcogen-containing compound of claim 1 , wherein the compound has a face-centered cubic crystal lattice structure. 4 . The chalcogen-containing compound of claim 3 , wherein the vacancy is a vacant site excluding sites filled with Se, Sn, Bi, and Te in the face-centered cubic lattice structure, and the Ag is substituted by replacing a part of the Bi. 5 . The chalcogen-containing compound of claim 3 , wherein the Se is filled in an anion site of the face-centered cubic lattice structure, the Sn and Bi are filled in a cationic site of the face-centered cubic lattice structure, the vacancy is a vacant site of the remaining sites excluding the sites filled with Se, Sn, and Bi, and the Ag is substituted by replacing a part of the Bi. 6 . A thermoelectric conversion material comprising the chalcogen-containing compound according to claim 1 . 7 . A method for preparing the chalcogen-containing compound according to claim 1 , comprising the steps of: mixing raw materials of Sn, Bi, Ag, and Se and then melting the raw materials to prepare a melt; heat-treating the melt; pulverizing the resultant product obtained through the heat treatment; and sintering the pulverized product. 8 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the raw materials of Sn, Bi, Ag, and Se are mixed at a molar ratio of Sn:Bi:Ag:Se corresponding to 4:2-x:3x:7, and the x is 0<x<0.5. 9 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the melting is carried out at a temperature of 750 to 1000° C. 10 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the heat treatment is carried out at a temperature of 500 to 700° C. 11 . The method for preparing the chalcogen-containing compound of claim 7 , further comprising a step of cooling the resultant of the heat treatment step to form an ingot between the heat treatment step and the pulverization step. 12 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the sintering step is carried out by a spark plasma sintering method. 13 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the sintering step is carried out at a temperature of 550 to 700° C. under a pressure of 10 to 130 MPa. 14 . A thermoelectric element comprising the chalcogen-containing compound according to claim 1 .
by unit-cell parameters, atom positions or structure diagrams · CPC title
Electric properties · CPC title
by d-values or two theta-values, e.g. as X-ray diagram · CPC title
Thermal properties · CPC title
Electricity · mapped topic
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