Chalcogen-containing compound, its preparation method and thermoelectric element comprising the same

US2019334071A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2019334071-A1
Application numberUS-201816462179-A
CountryUS
Kind codeA1
Filing dateJun 5, 2018
Priority dateJun 7, 2017
Publication dateOct 31, 2019
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0<x<0.5.

First claim

Opening claim text (preview).

1 . A chalcogen-containing compound represented by the following Chemical Formula 1: V 1-2x Sn 4 Bi 2-x Ag 3x Se 7   [Chemical Formula 1] wherein, in the above Chemical Formula 1, V is vacancy and 0<x<0.5. 2 . The chalcogen-containing compound of claim 1 , wherein x is 0.05≤x≤0.4. 3 . The chalcogen-containing compound of claim 1 , wherein the compound has a face-centered cubic crystal lattice structure. 4 . The chalcogen-containing compound of claim 3 , wherein the vacancy is a vacant site excluding sites filled with Se, Sn, Bi, and Te in the face-centered cubic lattice structure, and the Ag is substituted by replacing a part of the Bi. 5 . The chalcogen-containing compound of claim 3 , wherein the Se is filled in an anion site of the face-centered cubic lattice structure, the Sn and Bi are filled in a cationic site of the face-centered cubic lattice structure, the vacancy is a vacant site of the remaining sites excluding the sites filled with Se, Sn, and Bi, and the Ag is substituted by replacing a part of the Bi. 6 . A thermoelectric conversion material comprising the chalcogen-containing compound according to claim 1 . 7 . A method for preparing the chalcogen-containing compound according to claim 1 , comprising the steps of: mixing raw materials of Sn, Bi, Ag, and Se and then melting the raw materials to prepare a melt; heat-treating the melt; pulverizing the resultant product obtained through the heat treatment; and sintering the pulverized product. 8 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the raw materials of Sn, Bi, Ag, and Se are mixed at a molar ratio of Sn:Bi:Ag:Se corresponding to 4:2-x:3x:7, and the x is 0<x<0.5. 9 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the melting is carried out at a temperature of 750 to 1000° C. 10 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the heat treatment is carried out at a temperature of 500 to 700° C. 11 . The method for preparing the chalcogen-containing compound of claim 7 , further comprising a step of cooling the resultant of the heat treatment step to form an ingot between the heat treatment step and the pulverization step. 12 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the sintering step is carried out by a spark plasma sintering method. 13 . The method for preparing the chalcogen-containing compound of claim 7 , wherein the sintering step is carried out at a temperature of 550 to 700° C. under a pressure of 10 to 130 MPa. 14 . A thermoelectric element comprising the chalcogen-containing compound according to claim 1 .

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Classifications

  • by unit-cell parameters, atom positions or structure diagrams · CPC title

  • Electric properties · CPC title

  • by d-values or two theta-values, e.g. as X-ray diagram · CPC title

  • Thermal properties · CPC title

  • H01L35/16Primary

    Electricity · mapped topic

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What does patent US2019334071A1 cover?
A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conduc…
Who is the assignee on this patent?
Lg Chemical Ltd
What technology area does this patent fall under?
Primary CPC classification H01L35/16. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 31 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).