Ion source and ion implantation apparatus

Patent metadata

Field	Value
Publication number	US-2019326089-A1
Application number	US-201816224910-A
Country	US
Kind code	A1
Filing date	Dec 19, 2018
Priority date	Feb 9, 2018
Publication date	Oct 24, 2019
Grant date	—

Abstract

An ion source for improving beam transport efficiency regarding a ribbon beam is provided. The plasma generation container is formed with a beam extraction port at an end thereof. The shielding member plugs the beam extraction port and comprises three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

First claim

What is claimed is:

1 . An ion source comprising:
a plasma generation container formed with a beam extraction port at an end thereof; and a shielding member plugging the beam extraction port and comprising three or more elongate holes each of which is long in a lateral direction of a ribbon beam to be extracted through the shielding member and which are arranged in the form of an array extending in the lateral direction, wherein a first length one of the elongate holes located in a central region of the array is shorter than a second length of one of the remaining elongate holes located on an end side of the array.

2 . The ion source as recited in claim 1 , further comprising a plurality of electrodes for extracting the ribbon beam from the plasma generation container,

3 . The ion source as recited in claim 2 , wherein the shielding member is clamped between the plasma generation container and an electrode of the plurality of electrodes that is disposed closest to the plasma generation container.

3 . The ion source as recited in claim 2 , wherein an electrode of the plurality of electrodes that is disposed closest to the plasma generation container additionally serves as the shielding member.

4 . An ion implantation apparatus comprising:
the ion source as recited in claim 1 ; and a current density distribution adjustor that adjusts a beam current density distribution in the lateral direction of the ribbon beam.

5 . The ion implantation apparatus as recited in claim 4 , wherein the current density distribution adjustor comprises a plurality of magnetic poles arranged along a longitudinal direction of the ribbon beam to sandwich the ribbon beam therebetween.

6 . The ion implantation apparatus as recited in claim 4 , wherein the current density distribution adjustor comprises a plurality of electrodes arranged along a longitudinal direction of the ribbon beam to sandwich the ribbon beam therebetween.

7 . An ion source comprising:
a plasma generation container including a beam extraction port; and a shield provided in the beam extraction port and comprising a first hole, a second hole, and a third hole between the first and second holes, each of the first to third holes having a length that is longer than a width thereof and arranged along a line in a length direction thereof, the length of the third hole being shorter a length of one of the first hole and the second hole.

8 . The ion source as recited in claim 7 , wherein a part of the shield is disposed outside of the plasma generation container.

9 . The ion source as recited in claim 1 , further comprising an extraction electrode system.

10 . The ion source as recited in claim 9 , wherein the extraction electrode system comprise a plurality of electrodes.

11 . The ion source as recited in claim 10 , wherein the plasma generation container comprises:
two protrusions that extend from the plasma generation container in parallel with the electrodes, and two coil springs, one coil spring provided between each of the two protrusions and an electrode of the plurality of electrodes that is closest to the plasma generation container.

12 . The ion source as recited in claim 9 , wherein the extraction electrode system includes the shield.

13 . The ion source as recited in claim 12 , wherein the extraction electrode system comprises a plurality of electrodes and the shield is formed integrally with an electrode of the plurality of electrodes that is closest to the plasma generation chamber.

Assignees

• Nissin Ion Equipment Co Ltd

Inventors

• Yamamoto Tetsuro

Classifications

• H01J37/08 Primary

  Ion sources; Ion guns · CPC title

• H01J37/317

  for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation (H01J37/36 takes precedence) · CPC title

• H01J2237/30472

  Controlling the beam · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J2237/083

  Beam forming · CPC title