Organometallic Precursors, Methods Of Forming A Layer Using The Same And Methods Of Manufacturing Semiconductor Devices Using The Same

Patent metadata

Field	Value
Publication number	US-2019304835-A1
Application number	US-201916442936-A
Country	US
Kind code	A1
Filing date	Jun 17, 2019
Priority date	Oct 7, 2016
Publication date	Oct 3, 2019
Grant date	—

Abstract

An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

First claim

What is claimed is:

1 . An organometallic precursor represented by one of the following Chemical Formulae 1-3 and 1-4,

2 . An organometallic precursor represented by the following Chemical Formula 2,

and
wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7.

3 . The organometallic precursor of claim 2 , wherein the organometallic precursor represented by the following Chemical Formula 2-1.

4 . A method of manufacturing a semiconductor device, the method comprising:
forming a barrier conductive layer by providing an organometallic precursor on a semiconductor substrate, the organometallic precursor being represented by the following Chemical Formula 2,

wherein R1, R2, R3 and R4 are each independently one of a hydrogen atom, a halogen atom and an alkyl group of C1 to C7; and
forming a metal layer on the barrier conductive layer.

5 . The method of claim 4 , wherein the forming the barrier conductive layer includes providing a nitrogen-containing gas over the semiconductor substrate during the providing the organometallic precursor, and
the forming the forming the barrier conductive layer includes forming the barrier conductive layer as a tungsten nitride layer.

6 . The method of claim 5 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer, and
the metal layer includes a tungsten layer.

7 . The method of claim 6 , wherein the forming the metal layer includes providing the organometallic precursor on the barrier conductive layer with a hydrogen gas.

8 . The method of claim 5 , wherein the nitrogen-containing gas includes at least one of ammonia (NH 3 ), nitrogen dioxide (NO 2 ) and nitrous oxide (N 2 O).

9 . The method of claim 4 , wherein the organometallic precursor represented by the following Chemical Formula 2-1.

10 . The method of claim 4 , wherein the organometallic precursor is provided with a carrier gas including an inactive gas.

11 . The method of claim 10 , wherein the inactive gas includes at least one of argon (Ar), helium (He), krypton (Kr) and xenon (Xe).

12 . The method of claim 4 , wherein a chamber temperature for forming the barrier conductive layer is about 200° C. to about 600° C.

13 . The method of claim 4 , wherein a chamber temperature for forming the barrier conductive layer is about 200° C. to about 400° C.

14 . The method of claim 4 , wherein the barrier conductive layer includes a metal atomic layer and a reaction material layer, which are alternately deposited.

15 . The method of claim 14 , wherein the reaction material layer is a nitrogen atomic layer.

16 . The method of claim 4 , wherein the barrier conductive layer includes at least one of tungsten nitride, tungsten carbide and tungsten carbonitride.

17 . The method of claim 4 , wherein the semiconductor substrate includes a silicon substrate, a germanium substrate, a silicon-germanium substrate, an SOI substrate or a GOI substrate.

18 . The method of claim 4 , wherein the semiconductor substrate includes an opening, and the barrier conductive layer has a substantially uniform thickness in the opening, and the metal layer is formed to fill the opening.

19 . The method of claim 18 , further comprising partially removing the barrier conductive layer and the metal layer for planarization.

20 . The method of claim 4 , wherein the metal layer includes at least one of tungsten, aluminum, copper, titanium and tantalum.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Sun Chang-Woo
• Yun Ji-Eun
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Kang-Yong
• Lee Sang-Ick
• Cho Sung-Woo

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/032 Primary

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title