Thin film photovoltaic cell with back contacts

Patent metadata

Field	Value
Publication number	US-2019288136-A1
Application number	US-201916427534-A
Country	US
Kind code	A1
Filing date	May 31, 2019
Priority date	Jun 26, 2015
Publication date	Sep 19, 2019
Grant date	—

Abstract

Methods of fabricating photovoltaic cells are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes may include a photon-reflective material.

First claim

What is claimed is:

1 . A method comprising:
fabricating a photovoltaic cell, the fabricating comprising:
providing a substrate, the substrate being, at least in part, transparent to allow light to enter the photovoltaic cell through the substrate;
providing a light absorption layer in association with the substrate, the light absorption layer having opposite first and second surfaces, the first surface being closer to the substrate than the second surface;
disposing a passivation layer over the second surface of the light absorption layer;
forming a plurality of first discrete contacts and a plurality of second discrete contacts within, at least in part, the passivation layer to electrically couple to the light absorption layer; and
providing a first electrode and a second electrode disposed over the passivation layer, the first electrode electrically contacting the plurality of first discrete contacts, and the second electrode electrically contacting the plurality of second discrete contacts.

2 . The method of claim 1 , wherein the light absorption layer comprises a thin film semiconductor material, the thin film semiconductor material having a thickness of 5 microns or less, and comprising one of copper-indium-gallium-selenide (CIGS), copper-zinc-tin-sulfide (CZTS), or a Perovskite material.

3 . The method of claim 2 , wherein the plurality of first discrete contacts comprise a plurality of heterojunction-type discrete contacts to the light absorption layer extending through the passivation layer, and the plurality of second discrete contacts comprise a plurality of ohmic-type contacts to the light absorption layer extending through the passivation layer.

4 . The method of claim 1 , wherein first discrete contacts of the plurality of first discrete contacts, and second discrete contacts of the plurality of second discrete contacts each have a characteristic dimension of 500 nanometers or less.

5 . The method of claim 1 , wherein the plurality of first discrete contacts and the plurality of second discrete contacts extend through the passivation layer and comprise surfaces coplanar with a surface of the passivation layer.

6 . The method of claim 1 , wherein the plurality of first discrete contacts comprise a plurality of heterojunction-type discrete contacts to the light absorption layer, and the plurality of second discrete contacts comprise a plurality of ohmic-type discrete contacts to the light absorption layer.

7 . The method of claim 6 , wherein the light absorption layer comprises a semiconductor material, the semiconductor material comprising one of copper-indium-gallium-selenide (CIGS), copper-zinc-tin-sulfide (CZTS), or a Perovskite material, and wherein the plurality of heterojunction-type discrete contacts each comprise a buffer material and a transparent conducting oxide, and the plurality of ohmic-type discrete contacts comprise a metal contact to the light absorption layer.

8 . The method of claim 1 , wherein the passivation layer is a second surface passivation layer, and wherein fabricating the photovoltaic cell further comprises providing a first surface passivation layer disposed over the first surface of the light absorption layer, between the substrate and the light absorption layer.

9 . The method of claim 8 , wherein the first surface passivation layer and second surface passivation layer comprise a common passivation material.

10 . The method of claim 1 , wherein the first electrode and second electrode comprise interdigitated first and second conductive lines, respectively disposed over the corresponding plurality of first discrete contacts and the corresponding plurality of second discrete contacts.

11 . The method of claim 1 , wherein the first electrode and the second electrode cover at least 90% of the passivation layer.

Assignees

• IBM

Inventors

• Eickelmann Hans-Juergen
• Kellmann Ruediger
• Kuehl Hartmut
• Schmidt Markus

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1828

  Electricity · mapped topic

• H01L31/18

  Electricity · mapped topic

• H01L31/0465 Primary

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic