Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process

Patent metadata

Field	Value
Publication number	US-2019279902-A1
Application number	US-201815918673-A
Country	US
Kind code	A1
Filing date	Mar 12, 2018
Priority date	Mar 12, 2018
Publication date	Sep 12, 2019
Grant date	—

Abstract

Methods of dicing semiconductor wafers are described. In an example, a method of dicing a semiconductor wafer having integrated circuits thereon involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a multiple pass laser scribing process to provide a patterned mask with gaps exposing regions of the semiconductor wafer between the integrated circuits, the multiple pass laser scribing process including a first pass along a first edge scribing path, a second pass along a center scribing path, a third pass along a second edge scribing path, a fourth pass along the second edge scribing path, a fifth pass along the center scribing path, and a sixth pass along the first edge scribing path. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

First claim

1 . A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; patterning the mask with a multiple pass laser scribing process to provide a patterned mask with gaps exposing regions of the semiconductor wafer between the integrated circuits, the multiple pass laser scribing process comprising a first pass along a first edge scribing path, a second pass along a center scribing path, a third pass along a second edge scribing path, a fourth pass along the second edge scribing path, a fifth pass along the center scribing path, and a sixth pass along the first edge scribing path, wherein the first pass is performed prior to the second pass, the second pass is performed prior to the third pass, the third pass is performed prior to the fourth pass, the fourth pass is performed prior to the fifth pass, and the fifth pass is performed prior to the sixth pass; and plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.

2 . The method of claim 1 , wherein the multiple pass laser scribing process comprises using a laser beam having a spot size of approximately 10 microns.

3 . The method of claim 2 , wherein a spacing between centers of the first edge scribing path and the center scribing path is approximately 5 microns, and a spacing between centers of the center scribing path and the second edge scribing path is approximately 5 microns.

4 . The method of claim 3 , wherein patterning the mask with the multiple pass laser scribing process comprises forming trenches in the regions of the semiconductor wafer between the integrated circuits, wherein plasma etching the semiconductor wafer comprises extending the trenches to form corresponding trench extensions, and wherein the trenches have a width of approximately 20 microns and a depth in the range of 5-6 microns.

5 . The method of claim 2 , wherein a spacing between centers of the first edge scribing path and the center scribing path is approximately 8 microns, and a spacing between centers of the center scribing path and the second edge scribing path is approximately 8 microns.

6 . The method of claim 5 , wherein patterning the mask with the multiple pass laser scribing process comprises forming trenches in the regions of the semiconductor wafer between the integrated circuits, wherein plasma etching the semiconductor wafer comprises extending the trenches to form corresponding trench extensions, and wherein the trenches have a width in the range of 25 to 30 microns and a depth of 5 microns or less.

7 . The method of claim 1 , wherein the multiple pass laser scribing process is based on a Gaussian laser beam.

8 . The method of claim 1 , wherein the multiple pass laser scribing process is based on a line-shaped laser beam having a flat top.

9 . A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; patterning the mask with a multiple pass laser scribing process to provide a patterned mask with gaps exposing regions of the semiconductor wafer between the integrated circuits, the multiple pass laser scribing process comprising a first pass along a center scribing path, a second pass along a first edge scribing path, a third pass along a second edge scribing path, a fourth pass along the second edge scribing path, a fifth pass along the first edge scribing path, and a sixth pass along the center scribing path, wherein the first pass is performed prior to the second pass, the second pass is performed prior to the third pass, the third pass is performed prior to the fourth pass, the fourth pass is performed prior to the fifth pass, and the fifth pass is performed prior to the sixth pass; and plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.

10 . The method of claim 9 , wherein the multiple pass laser scribing process comprises using a laser beam having a spot size of approximately 10 microns.

11 . The method of claim 10 , wherein a spacing between centers of the first edge scribing path and the center scribing path is approximately 5 microns, and a spacing between centers of the center scribing path and the second edge scribing path is approximately 5 microns.

12 . The method of claim 11 , wherein patterning the mask with the multiple pass laser scribing process comprises forming trenches in the regions of the semiconductor wafer between the integrated circuits, wherein plasma etching the semiconductor wafer comprises extending the trenches to form corresponding trench extensions, and wherein the trenches have a width of approximately 20 microns and a depth in the range of 5-6 microns.

13 . The method of claim 10 , wherein a spacing between centers of the first edge scribing path and the center scribing path is approximately 8 microns, and a spacing between centers of the center scribing path and the second edge scribing path is approximately 8 microns.

14 . The method of claim 13 , wherein patterning the mask with the multiple pass laser scribing process comprises forming trenches in the regions of the semiconductor wafer between the integrated circuits, wherein plasma etching the semiconductor wafer comprises extending the trenches to form corresponding trench extensions, and wherein the trenches have a width in the range of 25 to 30 microns and a depth of 5 microns or less.

15 . The method of claim 9 , wherein the multiple pass laser scribing process is based on a Gaussian laser beam.

16 . The method of claim 9 , wherein the multiple pass laser scribing process is based on a line-shaped laser beam having a flat top.

17 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
a factory interface; a laser scribe apparatus coupled with the factory interface and comprising a laser assembly configured to provide a multiple pass laser scribing process comprising multiple passes along a first edge scribing path, multiple passes along a center scribing path, and multiple passes along a second edge scribing path, wherein the laser assembly is configured to provide the multiple pass laser scribing process comprising a first pass along the first edge scribing path, a second pass along the center scribing path, a third pass along the second edge scribing path, a fourth pass along the second edge scribing path, a fifth pass along the center scribing path, and a sixth pass along the first edge scribing path, and wherein the first pass is performed prior to the second pass, the second pass is performed prior to the third pass, the third pass is performed prior to the fourth pass, the fourth pass is performed prior to the fifth pass, and the fifth pass is performed prior to the sixth pass; and a plasma etch chamber coupled with the factory interface.

18 . The system of claim 17 , wherein the laser assembly comprises a femto-second based laser beam.

19 . A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:
a factory interface; a laser scribe apparatus coupled with the factory interface and comprising a laser assembly configured to provide a multiple pass laser scribing process comprising multiple passes along a first ed

Assignees

• Applied Materials Inc

Inventors

• Park Jungrae
• Papanu James S
• Kumar Ajay
• Lei Wei-Sheng

Classifications

• H10P72/0451

  Apparatus for manufacturing or treating in a plurality of work-stations · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/287

  by chemical means · CPC title