Method to fabricate collimator structures on a direct conversion semiconductor X-ray detector
US-9219178-B2 · Dec 22, 2015 · US
US2019275350A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019275350-A1 |
| Application number | US-201716349938-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 2, 2017 |
| Priority date | Nov 17, 2016 |
| Publication date | Sep 12, 2019 |
| Grant date | — |
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Device including a multileaf collimator, the multileaf collimator including an array of leaves and slits, the array having an alternation of leaves and slits and extending in a longitudinal direction, the longitudinal direction being defined as a direction extending from an entrance plane of the array toward an exit plane of the array, each leaf being located between two slits; the device having a source for emitting an incident electromagnetic beam or a source for emitting an incident beam of subatomic particles, the source being arranged to emit the beam in the direction of the entrance plane of the array, the multileaf collimator being arranged to obtain an arrangement of beams from the incident beam, and the arrangement of beams forms an alternation of high-energy lines and lower-energy lines.
Opening claim text (preview).
1 . A device comprising: a multileaf collimator, said multileaf collimator comprising an array of leaves and slits; said array comprising an alternation of leaves and slits and extending in a longitudinal direction; said longitudinal direction being defined as a direction extending from an entrance plane of the array to an exit plane of the array, each leaf being located between two slits; at least one leaf or at least one slit of the array has a thickness different from a thickness respectively of at least one other leaf or at least one other slit of the array in the entrance plane or exit plane of the array; and a thickness of at least one leaf and/or a thickness of at least one slit of the array varies in the longitudinal direction; said device having a source of emission of an incident electromagnetic beam or a source of emission of an incident beam of subatomic particles, said source being arranged for emitting the beam in the direction of the entrance plane of the array, said multileaf collimator being arranged for obtaining an arrangement of beams starting from the incident beam; and the arrangement of beams forms an alternation of high-energy lines and lower-energy lines. 2 . The device according to claim 1 , characterized in that the source emits a divergent incident beam. 3 . The device according to claim 1 , characterized in that the arrangement of beams has a width greater than 1 mm and/or less than 10 cm. 4 . The according to claim 1 , characterized in that the source of electromagnetic radiation is an X-ray source. 5 . The device according to claim 4 , characterized in that the X-ray source is a cathode source. 6 . The device according to claim 1 , in which the multileaf collimator has a channel extending in the longitudinal direction and located upstream of the entrance plane of the array. 7 . The device according to claim 1 , in which the thickness of each of the leaves of the array in any one of the planes perpendicular to the longitudinal direction is greater than 300 μm and/or less than 2 mm. 8 . The device according to claim 1 , in which a distance, in the longitudinal direction, between the entrance plane of the array and the exit plane of the array is greater than 1 cm and/or less than 6 cm. 9 . The device according to claim 1 , in which at least one leaf of the array has a thickness that is different from a thickness of at least one other leaf of the array in the entrance plane of the array. 10 . The device according to claim 1 , in which at least one leaf of the array has a thickness that is different from a thickness of at least one other leaf of the array in the exit plane of the array. 11 . The device according to claim 1 , in which at least one leaf of the array has a thickness in the entrance plane of the array different from a thickness in the exit plane of the array. 12 . The device according to claim 1 , comprising at least three slits and/or at least two leaves. 13 . The device according to claim 1 , in which the thickness of each of the slits of the array in any one of the planes perpendicular to the longitudinal direction is greater than 300 μm and/or less than 1 mm. 14 . The device according claim 1 , in which at least one slit of the array has a thickness in the entrance plane of the array different from a thickness of at least one other slit of the array in the entrance plane of the array. 15 . The device according to claim 1 , in which at least one slit of the array has a thickness in the exit plane of the array different from a thickness of at least one other slit of the array in the exit plane of the array. 16 . The device according to claim 1 , in which at least one slit of the array has a thickness in the entrance plane of the array different from a thickness in the exit plane of the array. 17 . The device according to claim 1 , in which the successive leaves of the array have respective thicknesses in any one of the planes perpendicular to the longitudinal direction that vary in an increasing manner or that remain constant with increasing distance from a central plane of the array in two opposite directions perpendicular to the central plane of the array, the central plane of the array being parallel to the longitudinal direction and linking two opposite internal walls of the multileaf collimator between which the leaves extend. 18 . The device according to claim 1 , in which the successive slits of the array have respective thicknesses in any one of the planes perpendicular to the longitudinal direction that vary in an increasing manner or that remain constant with increasing distance from a central plane of the array in two opposite directions perpendicular to the central plane of the array, the central plane of the array being parallel to the longitudinal direction and linking two opposite internal walls of the multileaf collimator between which the leaves extend. 19 . The device according to claim 1 , in which the successive slit/leaf interfaces form respective angles with respect to a central plane of the array that vary in an increasing manner or that remain constant with increasing distance from the central plane of the array in two opposite directions perpendicular to the central plane of the array, each of these angles having its vertex upstream of the entrance plane of the array with respect to the longitudinal direction, the central plane of the array being parallel to the longitudinal direction and linking two opposite internal walls of the multileaf collimator between which the leaves extend. 20 . The device according to claim 17 , in which the array is symmetrical with respect to the central plane of the array. 21 . The device according to claim 1 , comprising a stopper arranged to be fitted detachably on the collimator downstream of the exit plane of the array with respect to the longitudinal direction, said stopper being arranged for delimiting a size and/or shape of an arrangement of beams leaving the multileaf collimator. 22 . A method of making a multileaf collimator comprising an array of leaves and slits, said array comprising an alternation of leaves and slits and extending in a longitudinal direction, said longitudinal direction being defined as a direction extending from an entrance plane of the array to an exit plane of the array, each leaf being located between two slits; the multileaf collimator including: at least one leaf or at least one slit of the array has a thickness different from a thickness respectively of at least one other leaf or at least one other slit of the array in the entrance plane or exit plane of the array, and a thickness of at least one leaf and/or a thickness of at least one slit of the array varies in the longitudinal direction, the multileaf collimator being intended to be the collimator of a device according to any one of the preceding claims, said method comprising: acquisition, in technical calculation means, of parameters characterizing a source; acquisition, in the technical calculation means, of parameters characterizing the multileaf collimator; acquisition, in the technical calculation means, of parameters characterizing the target; at least one step of calculation, by the technical calculation means, of characteristics of the desired arrangement of beams, by successive iterations of the step of acquisition of the parameters characterizing the multileaf collimator; and manufacture of said multileaf collimator. 23 . A method of m
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