Method to fabricate collimator structures on a direct conversion semiconductor X-ray detector
US-9219178-B2 · Dec 22, 2015 · US
US2019261936A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019261936-A1 |
| Application number | US-201916281189-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 21, 2019 |
| Priority date | Feb 28, 2018 |
| Publication date | Aug 29, 2019 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
In a method for producing a microstructure component, which is used in particular as an x-ray phase contrast grating in an x-ray device, a material absorbing x-rays is poured into a mold able at least to be deformed about one bending axis, which is formed by a silicon substrate and which has a plurality of cutouts running in a direction of the thickness of the silicon substrate with dimensions in the micrometer range. The mold into which the material is poured is heated up to a working temperature value lying above the room temperature and below a melting temperature value of the material which is poured into it and is formed into a final contour as per specifications.
Opening claim text (preview).
What is claimed is: 1 . A method for producing a microstructure component, the method comprising: pouring a material for absorbing x-rays into a mold, the mold being at least deformable about a bending axis, formed by a silicon substrate, and including a plurality of cutouts running in a thickness direction of the silicon substrate with dimensions in the micrometer range; heating up the mold, including the material poured into the mold, to a working temperature value above a room temperature and below a melting temperature value of the material poured into the mold; and deforming the mold, with the material poured into the mold, into a final contour according to specifications. 2 . The method of claim 1 , wherein the deforming includes deforming mold into the contour according to the specifications by creep of the material poured into the mold. 3 . The method of claim 1 , wherein a value of around 20 to 50 percent of the melting temperature value is employed as the working temperature value. 4 . The method of claim 1 , wherein the material for absorbing x-rays is introduced into the mold in a molten state. 5 . The method of claim 1 , wherein the mold is pre-treated before the pouring of the material for absorbing x-rays into the mold, to avoid a chemical bonding of the x-ray-absorbing material with the silicon substrate forming the mold. 6 . The method of claim 1 , wherein the deforming includes deforming the mold filled with the material via a tool including a lower shell and an upper shell with shaping surfaces, each curved in a mirror image along a circular cylindrical surface. 7 . The method of claim 1 , wherein for the deforming of the mold, a force corresponding to a mass of 10 to 150 grams is exerted on the mold. 8 . The method of claim 1 , wherein the deforming of the mold is carried out in an oven by heating up to the working temperature value. 9 . The method of claim 1 , wherein the cutouts of the mold are formed by using etching technology to embody columns, which run in a first substrate direction and are separated from one another by transverse webs and are arranged like rows in parallel to one another in a second substrate direction, perpendicular to the first substrate direction. 10 . The method of claim 9 , wherein the columns, which follow one another in the second substrate direction, are arranged offset to one another in relation to their longitudinal extent in the first substrate direction. 11 . The method of claim 1 , wherein the cutouts are formed so as to penetrate the silicon substrate in the thickness direction. 12 . The method of claim 1 , wherein the cutouts have an aspect ratio in the thickness direction of around 1:450, and wherein the cutouts have a width of 1 to 4 micrometers. 13 . A microstructure component produced in accordance with the method of claim 1 . 14 . An x-ray device with an x-ray phase contrast grating formed by the microstructure component of claim 13 . 15 . The method of claim 2 , wherein a value of around 20 to 50 percent of the melting temperature value is employed as the working temperature value. 16 . The method of claim 1 , wherein a value of around 30 to 40 percent of the melting temperature value is employed as the working temperature value. 17 . The method of claim 4 , wherein the material for absorbing x-rays is introduced into the cutouts the mold in a molten state. 18 . The method of claim 2 , wherein the mold is pre-treated before the pouring of the material for absorbing x-rays into the mold, to avoid a chemical bonding of the x-ray-absorbing material with the silicon substrate forming the mold. 19 . The method of claim 2 , wherein the deforming includes deforming the mold filled with the material via a tool including a lower shell and an upper shell with shaping surfaces, each curved in a mirror image along a circular cylindrical surface. 20 . The method of claim 2 , wherein for the deforming of the mold, a force corresponding to a mass of 10 to 150 grams is exerted on the mold. 21 . The microstructure component of claim 13 , wherein the microstructure component is an x-ray phase contrast grating.
Methods and devices obtaining contrast from non-absorbing interaction of the radiation with matter, e.g. phase contrast · CPC title
using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation · CPC title
involving phase contrast X-ray imaging · CPC title
the source being combined with a filter or grating · CPC title
the radiation being X-rays · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.