Mn-Zn-O SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR

Patent metadata

Field	Value
Publication number	US-2019242009-A1
Application number	US-201716320192-A
Country	US
Kind code	A1
Filing date	Jul 11, 2017
Priority date	Jul 27, 2016
Publication date	Aug 8, 2019
Grant date	—

Abstract

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

First claim

1 . A Mn—Zn—O sputtering target comprising a chemical composition containing Mn, Zn, O, and an element X, with a proviso that X is one or two elements selected from the group consisting of W and Mo, wherein
a surface to be sputtered of the Mn—Zn—O sputtering target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

2 . The Mn—Zn—O sputtering target according to claim 1 , wherein the chemical composition contains 4 at % to 40 at % of Mn, 15 at % to 60 at % of Zn, and 5 at % to 40 at % of the element X relative to 100 at %, in total, of Mn, Zn, and the element X.

3 . The Mn—Zn—O sputtering target according to claim 1 , wherein the chemical composition further contains at least one element selected from the group consisting of Cu, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, In, Pd, Ga, Te, V, Si, Ta, Cr, and Tb.

4 . The Mn—Zn—O sputtering target according to claim 3 , wherein the at least one element selected from the group consisting of Cu, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, In, Pd, Ga, Te, V, Si, Ta, Cr, and Tb has a content of 8 at % to 70 at % relative to 100 at %, in total, of constituent elements of the Mn—Zn—O sputtering target, exclusive of O.

5 . A production method for producing the Mn—Zn—O sputtering target according to claim 1 , comprising:
a mixing step of wet mixing a mixed powder including a powder of an oxide of manganese, a powder of an oxide of zinc, and a metal powder containing the element X for 12 hours or more;
a sintering step of sintering the mixed powder at a temperature of 700° C. or higher after the mixing step; and
a finishing step of smoothing a surface to be sputtered of the Mn—Zn—O sputtering target after the sintering step.

6 . The production method according to claim 5 , wherein the mixed powder further includes a powder containing a simple substance or a compound of at least one element selected from the group consisting of Cu, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, In, Pd, Ga, Te, V, Si, Ta, Cr, and Tb.

7 . The Mn—Zn—O sputtering target according to claim 2 , wherein the chemical composition further contains at least one element selected from the group consisting of Cu, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, In, Pd, Ga, Te, V, Si, Ta, Cr, and Tb.

8 . The Mn—Zn—O sputtering target according to claim 7 , wherein the at least one element selected from the group consisting of Cu, Mg, Ag, Ru, Ni, Zr, Sn, Bi, Ge, Co, Al, In, Pd, Ga, Te, V, Si, Ta, Cr, and Tb has a content of 8 at % to 70 at % relative to 100 at %, in total, of constituent elements of the Mn—Zn—O sputtering target, exclusive of O.

Assignees

• Dexerials Corp

Inventors

• Sugawara Junichi
• Kamori Yuichi

Classifications

• C04B35/453

  based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates · CPC title

• C04B2235/3258

  Tungsten oxides, tungstates, or oxide-forming salts thereof · CPC title

• C04B2235/3281

  Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O · CPC title

• C04B2235/3286

  Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate · CPC title

• C04B2235/3291

  Silver oxides · CPC title