Circuit device with monolayer bonding between surface structures

Patent metadata

Field	Value
Publication number	US-2019229082-A1
Application number	US-201815943289-A
Country	US
Kind code	A1
Filing date	Apr 2, 2018
Priority date	Jan 23, 2018
Publication date	Jul 25, 2019
Grant date	—

Abstract

Techniques and mechanisms for bonding structures of a circuit device with a monolayer. In an embodiment, a patterned metallization layer or a first dielectric layer includes a first surface portion. The first surface portion is exposed to first molecules which each include a first head group and a first end group which is substantially non-reactive with the first head group. The first head groups attach to the first portion to form a first self-assembled monolayer, which is subsequently reacted with second molecules to form a second monolayer comprising moieties of the first molecules. In another embodiment, the first head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, where the first end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic alcohol moiety, or an unsaturated hydrocarbon moiety.

First claim

What is claimed is:

1 . A circuit device for communicating a signal, the circuit device comprising:
a first dielectric layer; a patterned metallization layer on the first dielectric layer, wherein one of the patterned metallization layer or the first dielectric layer includes a first surface portion; a second dielectric layer including a second surface portion; and a first monolayer of first molecules, wherein the first monolayer bonds the first surface portion and the second surface portion to each other, wherein the first molecules are each a chemical equivalent to a product of one or more reactions with a second monolayer of second molecules and third molecules, the second molecules each including a respective R1 head group and a respective R2 end group which is substantially non-reactive with the R1 head group, wherein the R1 head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, wherein the R2 end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic alcohol moiety, an unsaturated hydrocarbon moiety, an epoxy moiety, or a phenol moiety.

2 . The circuit device of claim 1 , wherein the first moiety comprises one of a thiol moiety, a disulfide moiety, an amine moiety, an azole moiety, an amide moiety, an imide moiety, a cyanoacrylate derivative, an imidazole moiety, a pyrazole moiety, a triazole moiety, a tetrazole moiety, a thiazole moiety, a isothiazole, or a thiadiazole moiety.

3 . The circuit device of claim 2 , wherein the first moiety comprises the thiol moiety.

4 . The circuit device of claim 1 , the third molecules each including a respective R5 head group and a respective R4 end group, wherein the first molecules are each coupled to the first surface portion via a respective R1 head group, wherein the first molecules are each coupled to the second surface portion via a respective R5 head group, and wherein the first molecules each include an intermediary moiety which is a chemical equivalent to a product of a reaction between the R2 end group and the R4 end group.

5 . The circuit device of claim 4 , wherein the R4 end group comprises one of an amine moiety, a thiol moiety, a disulfide moiety, an acid anhydride moiety, an epoxy moiety, a phenol moiety, or an alcohol moiety, and wherein the R5 head group comprises one of an amine moiety, an azole moiety, an imide moiety, an epoxy moiety, a phenol moiety, or a cyanoacrylate derivative.

6 . The circuit device of claim 4 , wherein the R5 head group is substantially non-reactive with the R4 end group.

7 . The circuit device of claim 6 , wherein the R5 head group is substantially non-reactive with the R2 end group.

8 . The circuit device of claim 1 , wherein the one or more reactions include one of an acylation of the R2 end group or an esterification of the R2 end group.

9 . A method for fabricating circuit structures, the method comprising:
forming a patterned metallization layer on a first dielectric layer, wherein one of the patterned metallization layer or the first dielectric layer includes a first surface portion; forming a first monolayer, including attaching first molecules to the first surface portion, the first molecules each including a respective R1 head group and a respective R2 end group which is substantially non-reactive with the R1 head group, wherein the R1 head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, wherein the R2 end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic alcohol moiety, an unsaturated hydrocarbon moiety, an epoxy moiety, or a phenol moiety; performing reactions to produce a second monolayer from both the first monolayer and second molecules; and coupling the first surface portion to a second surface portion of a second dielectric layer via the second monolayer.

10 . The method of claim 9 , wherein the first moiety comprises one of a thiol moiety, a disulfide moiety, an amine moiety, an azole moiety, an amide moiety, an imide moiety, a cyanoacrylate derivative, an imidazole moiety, a pyrazole moiety, a triazole moiety, a tetrazole moiety, a thiazole moiety, a isothiazole, or a thiadiazole moiety.

11 . The method of claim 10 , wherein the first moiety comprises the thiol moiety.

12 . The method of claim 9 , the second molecules each comprising a respective R5 head group and a respective R4 end group, wherein the R5 head group is substantially non-reactive with the R4 end group.

13 . The method of claim 12 , wherein the R4 end group comprises one of an amine moiety, a thiol moiety, a disulfide moiety, an acid anhydride moiety, an epoxy moiety, a phenol moiety, or an alcohol moiety, and wherein the R5 head group comprises one of an amine moiety, an azole moiety, an imide moiety, an epoxy moiety, a phenol moiety, or a cyanoacrylate derivative.

14 . The method of claim 12 , wherein the R5 head group is substantially non-reactive with the R2 end group.

15 . The method of claim 9 , wherein performing reactions to produce the second monolayer comprises performing one of an acylation of the R2 end group or an esterification of the R2 end group.

16 . The method of claim 9 , wherein coupling the first surface portion to the second surface portion comprises attaching the second molecules to the second surface portion after performing the reactions to produce the second monolayer.

17 . The method of claim 9 , wherein performing reactions to produce the second monolayer comprises forming a third monolayer, including attaching the second molecules to the second surface portion, and wherein coupling the first surface portion to the second surface portion comprises:
after forming the first monolayer and after forming the third monolayer, performing a reaction with the first monolayer and the third monolayer.

18 . The method of claim 17 , wherein the patterned metallization layer or the first dielectric layer comprises a third surface portion, wherein the second dielectric layer further comprises a fourth surface portion, the method further comprising:
forming a fourth monolayer, including attaching third molecules to the third surface portion; forming a fifth monolayer, including attaching fourth molecules to the fourth surface portion; performing reactions to produce a sixth monolayer from both the fourth monolayer and the fifth monolayer; and coupling the third surface portion to the fourth surface portion via the sixth monolayer.

19 . A system for communicating a signal, the system comprising:
a circuit device comprising:
a first dielectric layer;
a patterned metallization layer on the first dielectric layer, wherein one of the patterned metallization layer or the first dielectric layer includes a first surface portion;
a second dielectric layer including a second surface portion; and
a first monolayer of first molecules, wherein the first monolayer bonds the first surface portion and the second surface portion to each other, wherein the first molecules are each a chemical equivalent to a product of one or more reactions with a second monolayer of second molecules and third molecules, the second molecules each including a respective R1 head group and a respective R2 end group which is substantially non-reactive with the R1 head group, wherein the R1 head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, wherein the R2 end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic

Assignees

• Intel Corp

Inventors

• Nad Suddhasattwa
• Manepalli Rahul N
• Wall Marcel A

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W70/63

  Vias, e.g. via plugs · CPC title