Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method

Patent metadata

Field	Value
Publication number	US-2019206602-A1
Application number	US-201816222037-A
Country	US
Kind code	A1
Filing date	Dec 17, 2018
Priority date	Dec 28, 2017
Publication date	Jul 4, 2019
Grant date	—

Abstract

A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

First claim

1 . A spin-orbit-torque magnetization rotational element comprising:
a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein an easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on the plane in which the spin-orbit torque wiring layer extends.

2 . The spin-orbit-torque magnetization rotational element according to claim 1 ,
wherein the first ferromagnetic layer is an HoCo alloy, an SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.

3 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 1 ; a second ferromagnetic layer which is disposed on a side of the first ferromagnetic layer opposite to a side with the spin-orbit torque wiring layer, a magnetization direction of the second ferromagnetic layer being fixed; and a nonmagnetic layer which is disposed between the first ferromagnetic layer, and the second ferromagnetic layer.

4 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 2 ; a second ferromagnetic layer which is disposed on a side of the first ferromagnetic layer opposite to a side with the spin-orbit torque wiring layer, a magnetization direction of the second ferromagnetic layer being fixed; and a nonmagnetic layer which is disposed between the first ferromagnetic layer, and the second ferromagnetic layer.

5 . The spin-orbit-torque magnetoresistance effect element according to claim 3 , further comprising:
a third ferromagnetic layer which is disposed between the first ferromagnetic layer, and the nonmagnetic layer.

6 . The spin-orbit-torque magnetoresistance effect element according to claim 4 , further comprising:
a third ferromagnetic layer which is disposed between the first ferromagnetic layer, and the nonmagnetic layer.

7 . The spin-orbit-torque magnetoresistance effect element according to claim 3 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.

8 . The spin-orbit-torque magnetoresistance effect element according to claim 4 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.

9 . The spin-orbit-torque magnetoresistance effect element according to claim 5 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.

10 . The spin-orbit-torque magnetoresistance effect element according to claim 6 ,
wherein the first ferromagnetic layer includes a diffusion prevention layer on a surface on a side with the nonmagnetic layer on the first ferromagnetic layer.

11 . The spin-orbit-torque magnetoresistance effect element according to claim 7 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.

12 . The spin-orbit-torque magnetoresistance effect element according to claim 8 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.

13 . The spin-orbit-torque magnetoresistance effect element according to claim 9 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.

14 . The spin-orbit-torque magnetoresistance effect element according to claim 10 ,
wherein the diffusion prevention layer contains a nonmagnetic heavy metal.

15 . The spin-orbit-torque magnetoresistance effect element according to claim 6 ,
wherein the diffusion prevention layer has a thickness of twice or less an ionic radius of an element constituting the diffusion prevention layer.

16 . A method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 1 , comprising the step of:
forming at least the first ferromagnetic layer while applying a magnetic field in a direction including the X direction.

17 . The method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 16 , further comprising the step of:
annealing the first ferromagnetic layer while applying a magnetic field thereto in directions including the X direction after forming at least the first ferromagnetic layer.

18 . A method of manufacturing the spin-orbit-torque magnetization rotational element according to claim 1 , comprising the step of:
annealing the first ferromagnetic layer while applying a magnetic field in a direction including the X direction after forming at least the first ferromagnetic layer.

19 . The spin-orbit-torque magnetoresistance effect element according to claim 7 ,
wherein the diffusion prevention layer has a thickness of twice or less an ionic radius of an element constituting the diffusion prevention layer.

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei

Classifications

• H01F10/329 Primary

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• G01R33/09

  Magnetoresistive devices · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title