Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

Patent metadata

Field	Value
Publication number	US-2019206431-A1
Application number	US-201816222009-A
Country	US
Kind code	A1
Filing date	Dec 17, 2018
Priority date	Dec 28, 2017
Publication date	Jul 4, 2019
Grant date	—

Abstract

A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and has boron nitride or aluminum nitride further added thereto.

First claim

1 - 20 . (canceled)

21 . A spin-orbit-torque magnetization rotational element comprising:
a first wiring which extends in a first direction; a second wiring which extends in the first direction or a second direction orthogonal to the first direction; a spin-orbit torque wiring which is electrically connected to the first wiring and the second wiring and extends in a third direction intersecting both of the first direction and the second direction in a plan view; and a first ferromagnetic layer which is laminated on a surface of the spin-orbit torque wiring and has an easy axis of magnetization in the first direction or the second direction.

22 . The spin-orbit-torque magnetization rotational element according to claim 21 , wherein a shape of the first ferromagnetic layer in a plan view is a parallelogram having an acute angle in a corner.

23 . The spin-orbit-torque magnetization rotational element according to claim 21 , comprising:
a first via wiring configured to connect the first wiring to a first end portion of the spin-orbit torque wiring; and a second via wiring configured to connect the second wiring to a second end portion of the spin-orbit torque wiring, wherein widths of the first via wiring and the second via wiring are wider than a width of the spin-orbit torque wiring.

24 . The spin-orbit-torque magnetization rotational element according to claim 22 , comprising:
a first via wiring configured to connect the first wiring to a first end portion of the spin-orbit torque wiring; and a second via wiring configured to connect the second wiring to a second end portion of the spin-orbit torque wiring, wherein widths of the first via wiring and the second via wiring are wider than a width of the spin-orbit torque wiring.

25 . The spin-orbit-torque magnetization rotational element according to claim 21 , wherein the first ferromagnetic layer is a HoCo alloy, a SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.

26 . The spin-orbit-torque magnetization rotational element according to claim 22 , wherein the first ferromagnetic layer is a HoCo alloy, a SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.

27 . The spin-orbit-torque magnetization rotational element according to claim 23 , wherein the first ferromagnetic layer is a HoCo alloy, a SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.

28 . The spin-orbit-torque magnetization rotational element according to claim 24 , wherein the first ferromagnetic layer is a HoCo alloy, a SmFe alloy, an FePt alloy, a CoPt alloy, or a CoCrPt alloy.

29 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 21 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

30 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 22 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

31 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 23 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

32 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 24 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

33 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 25 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

34 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 26 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

35 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 27 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

36 . A spin-orbit-torque magnetoresistance effect element comprising:
the spin-orbit-torque magnetization rotational element according to claim 28 ; a second ferromagnetic layer located on a side of the first ferromagnetic layer opposite to the spin-orbit torque wiring; and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer.

37 . The spin-orbit-torque magnetoresistance effect element according to claim 29 , wherein the first ferromagnetic layer further includes a diffusion prevention layer configured to prevent diffusion of an element.

38 . The spin-orbit-torque magnetoresistance effect element according to claim 37 , wherein the diffusion prevention layer contains a non-magnetic heavy metal element.

39 . The spin-orbit-torque magnetoresistance effect element according to claim 37 , wherein a thickness of the diffusion prevention layer is twice or more of a diameter of the element constituting the diffusion prevention layer.

40 . A magnetic memory comprising a plurality of spin-orbit-torque magnetoresistance effect elements according to claim 29 .

Assignees

• Tdk Corp

Inventors

• Sasaki Tomoyuki
• SHIOKAWA Yohei

Classifications

• G11C11/18

  using Hall-effect devices · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11B5/3903 Primary

  using magnetic thin film layers or their effects, the films being part of integrated structures · CPC title

• G11C5/00

  Details of stores covered by group G11C11/00 · CPC title