Low-noise, high dynamic-range image sensor

Patent metadata

Field	Value
Publication number	US-2019166321-A1
Application number	US-201816197270-A
Country	US
Kind code	A1
Filing date	Nov 20, 2018
Priority date	Jul 25, 2014
Publication date	May 30, 2019
Grant date	—

Abstract

A sequence of control voltage levels are applied to a control signal line capacitively coupled to a floating diffusion node of a pixel to sequentially adjust a voltage level of the floating diffusion node. A pixel output signal representative of the voltage level of the floating diffusion node is compared with a reference voltage to identify a first control voltage level of the sequence of control voltage levels for which the voltage level of the floating diffusion node exceeds the reference voltage.

First claim

1 . A method of operation within an integrated-circuit image sensor, the method comprising:
applying a sequence of control voltage levels to a control signal line capacitively coupled to a floating diffusion node of a pixel to sequentially adjust a voltage level of the floating diffusion node; and comparing a pixel output signal representative of the voltage level of the floating diffusion node with a reference voltage to identify a first control voltage level of the sequence of control voltage levels for which the voltage level of the floating diffusion node exceeds the reference voltage.

2 . The method of claim 1 further comprising sampling the pixel output signal after resetting the floating diffusion node to a reset voltage level to generate the reference voltage.

3 . The method of claim 2 further comprising, after generating the reference voltage, activating a transfer gate disposed between the floating diffusion node and a photodiode of the pixel to enable charge accumulated within the photodiode to be transferred to the floating diffusion node.

4 . The method of claim 1 wherein the first control voltage level corresponds to a difference between a reset voltage level of the floating diffusion node and a voltage level of the floating diffusion node after enabling the charge accumulated within the photodiode to be transferred to the floating diffusion node.

5 . The method of claim 1 wherein applying the sequence of control voltage levels to the control signal line comprises applying a monotonic sequence of control voltage levels to the control signal line.

6 . The method of claim 5 wherein applying the monotonic sequence of control voltage levels to the control signal line comprises applying a sequence of step-wise increasing control voltage levels to the control signal line in which each of the control voltage levels, including the first control voltage level, corresponds to a respective one of a plurality of step count values.

7 . The method of claim 6 wherein the step-wise increasing control voltage levels increase in substantially uniform voltage steps to form an initial portion of the sequence of control voltage levels and increase in exponentially increasing voltage steps to form a final portion of the sequence of control voltage levels.

8 . The method of claim 1 wherein comparing the pixel output signal with the reference voltage to identify the first control voltage level for which the voltage level of the floating diffusion node exceeds the reference voltage comprises identifying, as the first control voltage level, a lowest one of the control voltage levels that exceeds the voltage level of the floating diffusion.

9 . The method of claim 1 further comprising, prior to applying the sequence of control voltage levels to the control signal line:
determining whether a threshold level of photocharge has been integrated within a photodiode of the pixel, including:
enabling a limited photocharge transfer from the photodiode to the floating diffusion node,
applying a threshold voltage level on the control signal line, and
while applying the threshold voltage level on the control signal line, comparing the pixel output signal representative of the voltage level of the floating diffusion node with the reference voltage to determine whether the pixel output signal exceeds or does not exceed the reference voltage and, correspondingly, whether the photocharge integrated within the photodiode does not or does exceed the threshold level; and

enabling a complete photocharge transfer from the photodiode to the floating diffusion node if the photocharge integrated within the photodiode is determined to exceed the threshold level.

10 . The method of claim 1 further comprising:
generating the sequence of control voltage levels together with a sequence of step count values, each of control voltage levels corresponding to a respective one of the step count values; and
latching, as an analog to digital conversion result, the one of the step count values that corresponds to the first control voltage level.

11 . An integrated circuit image sensor comprising:
a pixel having a photodiode and floating diffusion node switchably interconnected via a transfer gate, and an output circuit to output a signal representative of a voltage level of the floating diffusion node onto a pixel output line; a control signal line capacitively coupled to the floating diffusion node; a control voltage generator to apply a sequence of control voltage levels to the control signal line to capacitively adjust the voltage level of the floating diffusion node; and compare circuitry to compare a pixel output signal representative of the voltage level of the floating diffusion node with a reference voltage to identify a first control voltage level of the sequence of control voltage levels for which the voltage level of the floating diffusion node exceeds the reference voltage.

12 . The integrated circuit image sensor of claim 11 further comprising sample-and-hold circuitry to generate, as the reference voltage, a sample of the pixel output signal after the floating diffusion node has been reset to a reset voltage level.

13 . The integrated circuit image sensor of claim 12 further comprising control circuitry to activate the transfer gate after generating the reference voltage, wherein activating the transfer gate enables charge accumulated within the photodiode to be transferred to the floating diffusion node.

14 . The integrated circuit image sensor of claim 11 wherein the first control voltage level corresponds to a difference between a reset voltage level of the floating diffusion node and a voltage level of the floating diffusion node after enabling the charge accumulated within the photodiode to be transferred to the floating diffusion node.

15 . The integrated circuit image sensor of claim 11 wherein the control voltage generator to apply the sequence of control voltage levels to the control signal line comprises circuitry to apply a monotonic sequence of control voltage levels to the control signal line.

16 . The integrated circuit image sensor of claim 15 wherein the circuitry to apply the monotonic sequence of control voltage levels to the control signal line comprises a counter to generate a sequence of step count values and voltage ramp circuitry to apply a sequence of step-wise increasing control voltage levels to the control signal line in which each of the control voltage levels, including the first control voltage level, corresponds to a respective one of the step count values.

17 . The integrated circuit image sensor of claim 16 wherein the voltage ramp circuitry generates the step-wise increasing control voltage levels such that the control voltage levels increase in substantially uniform voltage steps to form an initial portion of the sequence of control voltage levels and increase in exponentially increasing voltage steps to form a final portion of the sequence of control voltage levels.

18 . The integrated circuit image sensor of claim 11 wherein the compare circuitry to compare the pixel output signal with the reference voltage to identify the first control voltage level for which the voltage level of the floating diffusion node exceeds the reference voltage comprises circuitry to identify, as the first control voltage level, a lowest one of the control voltage levels that exceeds the voltage level of the floating diffusion.

19 . The integrated circuit image sensor of claim 11 further comprising control circuitry to

Assignees

• Rambus Inc

Inventors

• Ladd John
• Guidash Michael
• Smith Craig M
• Vogelsang Thomas
• Endsley Jay
• Ching Michael T
• Harris James E

Classifications

• H04N25/673

  by using reference sources · CPC title

• H04N25/77 Primary

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/772

  comprising A/D, V/T, V/F, I/T or I/F converters · CPC title

• H04N25/616

  involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling · CPC title

• H04N25/671

  for non-uniformity detection or correction · CPC title