Switching device and power conversion device

Patent metadata

Field	Value
Publication number	US-2019165779-A1
Application number	US-201716321096-A
Country	US
Kind code	A1
Filing date	Jul 25, 2017
Priority date	Aug 5, 2016
Publication date	May 30, 2019
Grant date	—

Abstract

Provided is a switching device including: a cascode switch including at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors include a first transistor receiving the switching control signal through a control terminal and a second transistor having a control terminal connected to a first voltage source, and wherein the third switch is connected between the control terminal and the first terminal of the second transistor, is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off.

First claim

1 . A switching device comprising:
a cascode switch comprising at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors comprise a first transistor receiving the switching control signal through a control terminal and a second transistor comprising a control terminal connected to a first voltage source, and wherein the third switch is connected between the control terminal and the first terminal of the second transistor, is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off.

2 . The switching device of claim 1 , wherein the cascode switch is connected between a ground node and an output node, a first terminal of the first transistor is connected to the ground node, and a second terminal of the second transistor is connected to the output node.

3 . The switching device of claim 1 , wherein each of the first transistor, the second transistor, and the third switch is a Metal Oxide Silicon Field Effect Transistor (MOSFET),
wherein the control terminal of the first transistor, the second transistor, and the third switch is a gate of the MOSFET, and wherein the first terminal of the second transistor is a source of the MOSFET.

4 . The switching device of claim 3 , wherein each of the first transistor and the second transistor is an N-type MOSFET, and the third switch is a P-type MOSFET.

5 . The switching device of claim 1 , wherein each of the first transistor, the second transistor, and the third switch is a bipolar transistor, the control terminal of the first transistor and the second transistor is a base, and the first terminal of the second transistor is an emitter.

6 . The switching device of claim 1 , wherein each of the first transistor and the second transistor are an npn transistor, and the third switch is a pnp transistor.

7 . The switching device of claim 1 , wherein the cascode switch comprises at least one transistor connected between a second terminal of the first transistor and the first terminal of the second transistor.

8 . The switching device of claim 1 , wherein a power capacity of the second transistor is greater than that of the first transistor, and
wherein a power capacity of the third switch is smaller than that of the second transistor.

9 . The switching device of claims 1 , further comprising: a first diode comprising a cathode connected to the control terminal of the second transistor and an anode connected to a second terminal of the second transistor, and being connected with the third switch in parallel between the control terminal and the second terminal of the second transistor.

10 . The switching device of claim 1 , wherein the switching control signal is an alternating current (AC) signal and the output node outputs an AC current synchronized with a frequency of the switching control signal.

11 . The switching device of claim 1 , wherein the first voltage source is a direct current (DC) voltage source having a voltage level lower than a high level voltage of the output node.

12 . The switching device of claim 1 , wherein the switching control signal has a frequency between 50 MHz and 60 MHz.

13 . A power conversion device comprising the switching device according to claim 1 .

14 . The power conversion device of claim 13 , wherein the power conversion device comprises:
a first AC-DC converter configured to receive a first AC current and convert the first AC current into a first DC current having a first voltage level; an inverter configured to convert the first DC output from the first AC-DC converter into a second AC current of a first frequency; a transformer configured to convert the second AC current output from the inverter into a third AC current having a second voltage level and outputting the third AC current; and a second AC-DC converter configured to convert the third AC current output from the transformer into a second DC current having a rated output voltage level, wherein the inverter comprises the switching device and the switching device receives the switching control signal of the first frequency.

15 . The power conversion device of claim 14 , wherein the first DC current output from the first AC-DC converter has a voltage level higher than that of the first AC current.

Assignees

• Samsung Electronics Co Ltd

Inventors

• OLYUNIN Nikolay Nikolayevich
• Khripkov Alexander Nikolayevich
• CHERNOKALOV Alexander Gennadyevich

Classifications

• H02M3/33538

  of the forward type (H02M3/3353, H02M3/33569 take precedence) · CPC title

• H02M3/335

  using semiconductor devices only · CPC title

• H03K17/687 Primary

  the devices being field-effect transistors · CPC title

• H03K17/102

  in field-effect transistor switches · CPC title

• H03K17/18

  Modifications for indicating state of switch · CPC title