Metal-substituted titanium oxide, and method for producing metal-substituted titanium oxide sintered body

US2019161359A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2019161359-A1
Application numberUS-201716086956-A
CountryUS
Kind codeA1
Filing dateMar 16, 2017
Priority dateMar 22, 2016
Publication dateMay 30, 2019
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Proposed are a metal-substituted titanium oxide which has a composition other than conventional Ti 3 O 5 while having a property of being able to undergo phase transition from a crystal structure in a paramagnetic metal state to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light and which can also be used in fields other than conventional technical fields, and a method for producing a metal-substituted titanium oxide sintered body. According to the present invention, it is possible to provide a metal-substituted titanium oxide having a crystal structure which does not undergo phase transition to a crystal structure having the properties of a nonmagnetic semiconductor even at 460 [K] or lower but maintains a paramagnetic metal state over the entire temperature range of 0 to 800 [K] and which undergoes phase transition to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light, the metal-substituted titanium oxide having a composition in which some of Ti sites of Ti 3 O 5 are substituted with any one of Mg, Mn, Al, V and Nb.

First claim

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1 . A metal-substituted titanium oxide having a composition in which some of Ti sites of Ti 3 O 5 are substituted with any one of Mg, Mn, Al, V and Nb, wherein the metal-substituted titanium oxide has a crystal structure which does not undergo phase transition to a crystal structure having the properties of a nonmagnetic semiconductor even at 460 [K] or lower but maintains a paramagnetic metal state over the entire temperature range of 0 to 800 [K] and which undergoes phase transition to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light. 2 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is Mg, and x satisfies 0<x≤0.09. 3 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is any one of Mn, V and Nb, and x satisfies 0<x≤0.18. 4 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is Al, and x satisfies 0<x≤0.51. 5 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure maintaining the paramagnetic metal state before the crystal structure is subjected to the pressure or the light does not show an X-ray diffraction peak of β-Ti 3 O 5 in X-ray diffraction. 6 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure which has undergone phase transition to a nonmagnetic semiconductor upon application of the pressure or the light shows the X-ray diffraction peak of β-Ti 3 O 5 in X-ray diffraction. 7 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure which has undergone phase transition to a nonmagnetic semiconductor upon application of the pressure or the light has a magnetization lower than a magnetization of the crystal structure in the paramagnetic metal state at 460 [K] or lower. 8 . A method for producing a metal-substituted titanium oxide sintered body, the method comprising: mixing a solution containing A (A is any one of Mg, Mn, Al, V and Nb) with a dispersion liquid in which TiO 2 particles are dispersed to generate particles composed of TiO 2 and A in the mixed solution; and sintering a precursor powder composed of particles extracted from the mixed solution under a hydrogen atmosphere to produce a metal-substituted titanium oxide sintered body composed of a metal-substituted titanium oxide in which some of Ti sites of Ti 3 O 5 are substituted with A. 9 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the atomic ratio between A and Ti in the mixed solution is A:Ti=more than 0:less than 100 to 6:94 when A is any one of Mg, Mn, V and Nb. 10 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the atomic ratio between A and Ti in the mixed solution is A:Ti=more than 0:less than 100 to 10:90 when A is Al. 11 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the precursor powder is sintered at 900 to 1500[° C.] under a hydrogen atmosphere at 0.05 to 0.9 [L/min].

Assignees

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Classifications

  • Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis (H01F1/0036 takes precedence) · CPC title

  • by thermal analysis data, e.g. TGA, DTA, DSC · CPC title

  • Substoichiometric titanium oxides, e.g. Ti2O3 · CPC title

  • Crystal structural characteristics, e.g. symmetry · CPC title

  • Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate · CPC title

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What does patent US2019161359A1 cover?
Proposed are a metal-substituted titanium oxide which has a composition other than conventional Ti 3 O 5 while having a property of being able to undergo phase transition from a crystal structure in a paramagnetic metal state to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light and which can also be used in fields other than conventional technical fields,…
Who is the assignee on this patent?
Univ Tokyo
What technology area does this patent fall under?
Primary CPC classification C01G23/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu May 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).