Method for improving quality of titanium-containing feedstock
US-2015368753-A1 · Dec 24, 2015 · US
US2019161359A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019161359-A1 |
| Application number | US-201716086956-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 16, 2017 |
| Priority date | Mar 22, 2016 |
| Publication date | May 30, 2019 |
| Grant date | — |
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Proposed are a metal-substituted titanium oxide which has a composition other than conventional Ti 3 O 5 while having a property of being able to undergo phase transition from a crystal structure in a paramagnetic metal state to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light and which can also be used in fields other than conventional technical fields, and a method for producing a metal-substituted titanium oxide sintered body. According to the present invention, it is possible to provide a metal-substituted titanium oxide having a crystal structure which does not undergo phase transition to a crystal structure having the properties of a nonmagnetic semiconductor even at 460 [K] or lower but maintains a paramagnetic metal state over the entire temperature range of 0 to 800 [K] and which undergoes phase transition to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light, the metal-substituted titanium oxide having a composition in which some of Ti sites of Ti 3 O 5 are substituted with any one of Mg, Mn, Al, V and Nb.
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1 . A metal-substituted titanium oxide having a composition in which some of Ti sites of Ti 3 O 5 are substituted with any one of Mg, Mn, Al, V and Nb, wherein the metal-substituted titanium oxide has a crystal structure which does not undergo phase transition to a crystal structure having the properties of a nonmagnetic semiconductor even at 460 [K] or lower but maintains a paramagnetic metal state over the entire temperature range of 0 to 800 [K] and which undergoes phase transition to a crystal structure of a nonmagnetic semiconductor upon application of pressure or light. 2 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is Mg, and x satisfies 0<x≤0.09. 3 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is any one of Mn, V and Nb, and x satisfies 0<x≤0.18. 4 . The metal-substituted titanium oxide according to claim 1 , having a composition of A x Ti (3-x) O 5 wherein A is Al, and x satisfies 0<x≤0.51. 5 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure maintaining the paramagnetic metal state before the crystal structure is subjected to the pressure or the light does not show an X-ray diffraction peak of β-Ti 3 O 5 in X-ray diffraction. 6 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure which has undergone phase transition to a nonmagnetic semiconductor upon application of the pressure or the light shows the X-ray diffraction peak of β-Ti 3 O 5 in X-ray diffraction. 7 . The metal-substituted titanium oxide according to claim 1 , wherein the crystal structure which has undergone phase transition to a nonmagnetic semiconductor upon application of the pressure or the light has a magnetization lower than a magnetization of the crystal structure in the paramagnetic metal state at 460 [K] or lower. 8 . A method for producing a metal-substituted titanium oxide sintered body, the method comprising: mixing a solution containing A (A is any one of Mg, Mn, Al, V and Nb) with a dispersion liquid in which TiO 2 particles are dispersed to generate particles composed of TiO 2 and A in the mixed solution; and sintering a precursor powder composed of particles extracted from the mixed solution under a hydrogen atmosphere to produce a metal-substituted titanium oxide sintered body composed of a metal-substituted titanium oxide in which some of Ti sites of Ti 3 O 5 are substituted with A. 9 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the atomic ratio between A and Ti in the mixed solution is A:Ti=more than 0:less than 100 to 6:94 when A is any one of Mg, Mn, V and Nb. 10 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the atomic ratio between A and Ti in the mixed solution is A:Ti=more than 0:less than 100 to 10:90 when A is Al. 11 . The method for producing a metal-substituted titanium oxide sintered body according to claim 8 , wherein the precursor powder is sintered at 900 to 1500[° C.] under a hydrogen atmosphere at 0.05 to 0.9 [L/min].
Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis (H01F1/0036 takes precedence) · CPC title
by thermal analysis data, e.g. TGA, DTA, DSC · CPC title
Substoichiometric titanium oxides, e.g. Ti2O3 · CPC title
Crystal structural characteristics, e.g. symmetry · CPC title
Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate · CPC title
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