Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
US2019157474A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019157474-A1 |
| Application number | US-201916252162-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 18, 2019 |
| Priority date | Jul 27, 2015 |
| Publication date | May 23, 2019 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A solar cell includes a conductive area including first and second conductive areas on one surface of a semiconductor substrate, a passivation film having opening and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, the electrode including an adhesive layer on the semiconductor substrate or the conductive area, an electrode layer on the adhesive layer and including a metal, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer, the electrode layer having a thickness greater than a thickness of each of the adhesive layer and the barrier layer, a width of the electrode layer being larger than a width of the opening, and the barrier layer having a higher melting point than a melting point of the electrode layer.
Opening claim text (preview).
What is claimed is: 1 . A solar cell comprising: a semiconductor substrate; a conductive area including first and second conductive areas disposed on one surface of the semiconductor substrate; a passivation film having opening; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein the electrode includes an adhesive layer disposed on the semiconductor substrate or the conductive area, an electrode layer disposed on the adhesive layer and including a metal as a main component, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer as a main component, wherein the electrode layer has a thickness greater than a thickness of each of the adhesive layer and the barrier layer, wherein a width of the electrode layer is larger than a width of the opening, and wherein the barrier layer has a higher melting point than a melting point of the electrode layer. 2 . The solar cell according to claim 1 , wherein the barrier layer includes a refractory metal as a main component. 3 . The solar cell according to claim 1 , wherein the barrier layer includes titanium (Ti), molybdenum (Mo), chrome (Cr), or tungsten (W) as a main component. 4 . The solar cell according to claim 1 , wherein the barrier layer has a smaller coefficient of thermal expansion than a coefficient of thermal expansion of the electrode layer. 5 . The solar cell according to claim 1 , wherein the barrier layer has a greater thickness than a thickness of the adhesive layer. 6 . The solar cell according to claim 5 , wherein the adhesive layer and the barrier layer have a thickness ratio within a range from 1:2 to 1:30. 7 . The solar cell according to claim 5 , wherein the barrier layer has a thickness of 80 nm or less. 8 . The solar cell according to claim 1 , wherein the barrier layer has a specific resistance equal to or less than a specific resistance of the adhesive layer. 9 . The solar cell according to claim 8 , wherein the specific resistance of the barrier layer is higher than a specific resistance of the electrode layer. 10 . The solar cell according to claim 1 , wherein the barrier layer has a light-transmittance lower than a light-transmittance of the adhesive layer. 11 . The solar cell according to claim 1 , wherein the adhesive layer includes a refractory metal as a main component. 12 . The solar cell according to claim 1 , wherein the adhesive layer includes titanium (Ti), molybdenum (Mo), chrome (Cr) or tungsten (W) as a main component. 13 . The solar cell according to claim 1 , wherein the adhesive layer has a coefficient of thermal expansion between a coefficient of thermal expansion of the semiconductor substrate or the conductive area and a coefficient of thermal expansion of a portion of the electrode layer that is adjacent to the adhesive layer. 14 . The solar cell according to claim 1 , wherein the adhesive layer has a thickness of 50 nm or less. 15 . The solar cell according to claim 1 , wherein the adhesive layer and the barrier layer, disposed on opposite surfaces of the electrode layer, are formed of the same material. 16 . The solar cell according to claim 1 , wherein the electrode layer includes at least one of copper (Cu), aluminum (Al), silver (Ag), gold (Au) and alloys thereof as a main component. 17 . The solar cell according to claim 1 , wherein the electrode further includes a pad layer disposed on the barrier layer and connected to a ribbon. 18 . The solar cell according to claim 17 , wherein the pad layer includes at least one of tin and a nickel-vanadium alloy (NiV) as a main component. 19 . The solar cell according to claim 1 , wherein the adhesive layer comes into contact with the semiconductor substrate or the conductive area, wherein the electrode layer comes into contact with the adhesive layer, and wherein the barrier layer comes into contact with the electrode layer.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.