Semiconductor device

Patent metadata

Field	Value
Publication number	US-2019157437-A1
Application number	US-201916253168-A
Country	US
Kind code	A1
Filing date	Jan 21, 2019
Priority date	Feb 24, 2017
Publication date	May 23, 2019
Grant date	—

Abstract

There is provided a semiconductor device including a transistor portion and a diode portion. The transistor portion has a first-conductivity-type drift region formed inside a semiconductor substrate, a second-conductivity-type base region provided above the drift region inside the semiconductor substrate, and a second-conductivity-type collector region provided below the drift region inside the semiconductor substrate. The transistor portion has a second-conductivity-type well region provided inside the semiconductor substrate and extending downward beyond the base region and an injection amount restricting portion occupying at least a part of a region that is positioned below the well region and having a smaller second-conductivity-type carrier injection amount per unit area than the collector region.

First claim

What is claimed is:

1 . A semiconductor device comprising a transistor portion and a diode portion,
the transistor portion having: a first-conductivity-type drift region formed inside a semiconductor substrate; a second-conductivity-type base region provided above the drift region inside the semiconductor substrate; and a second-conductivity-type collector region provided below the drift region inside the semiconductor substrate, and the transistor portion having a second-conductivity-type well region provided inside the semiconductor substrate and extending downward beyond the base region, and the transistor portion having an injection amount restricting portion occupying at least a part of a region that is positioned below the well region, the injection amount restricting portion having a smaller second-conductivity-type carrier injection amount per unit area than the collector region.

2 . The semiconductor device according to claim 1 , wherein
the transistor portion includes an insulated gate bipolar transistor, and the diode portion includes a freewheeling diode that is electrically connected to the insulated gate bipolar transistor.

3 . The semiconductor device according to claim 1 , comprising a signal pad region in direct contact with the transistor portion or the diode portion,
wherein the signal pad region has: an insulating film formed on a front surface of the semiconductor substrate; and a conductive portion formed on the insulating film, and the well region is provided below the conductive portion.

4 . The semiconductor device according to claim 1 ,
wherein the injection amount restricting portion includes a first-conductivity-type conductive layer that is provided below the well region at a same depth as the collector region.

5 . The semiconductor device according to claim 4 ,
wherein the first-conductivity-type conductive layer has a higher first-conductivity-type doping concentration than the drift region.

6 . The semiconductor device according to claim 1 ,
wherein the injection amount restricting portion includes a second-conductivity-type conductive layer that is provided below the well region, and the second-conductivity-type conductive layer has a lower second-conductivity-type doping concentration than the collector region.

7 . The semiconductor device according to claim 1 ,
wherein the transistor portion further has a back surface electrode that is provided on a back surface of the semiconductor substrate and that is electrically connected to the collector region, and the injection amount restricting portion includes an insulating film that is provided between the semiconductor substrate and the back surface electrode.

8 . The semiconductor device according to claim 1 ,
wherein the well region has a higher second-conductivity-type doping concentration than the base region.

9 . The semiconductor device according to claim 1 , wherein the injection amount restricting portion occupies the entire region that is positioned below the well region.

10 . The semiconductor device according to claim 3 ,
wherein the injection amount restricting portion is provided below a boundary point at which the transistor portion, the diode portion and the signal pad region abut one another.

Assignees

• Fuji Electric Co Ltd

Inventors

• Matsui Toshiyuki

Classifications

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title

• H01L27/0635

  Electricity · mapped topic

• H01L29/1095

  Electricity · mapped topic

• H01L29/7397 Primary

  Electricity · mapped topic

• H01L29/861

  Electricity · mapped topic