Pin diode structure having surface charge suppression
US-9224768-B2 · Dec 29, 2015 · US
US2019148451A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019148451-A1 |
| Application number | US-201916242152-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 8, 2019 |
| Priority date | Sep 21, 2016 |
| Publication date | May 16, 2019 |
| Grant date | — |
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A composition includes a metal particle and a resin and has a wavelength band A having a wavelength band width of 1 μm or more in a wavelength range of 1 to 14 μm and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, and a ratio A min /B max between a minimum value A min of an absorbance of the wavelength band A and a maximum value B max of an absorbance of the wavelength band B is 3 or more.
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What is claimed is: 1 . A composition comprising: a metal particle; and a resin, wherein the composition, in a wavelength range of 1 to 14 has a wavelength band A having a wavelength band width of 1 μm or more, and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 μm or more, and a ratio A min /B max between a minimum value A min of an absorbance of the wavelength band A and a maximum value B max of an absorbance of the wavelength band B is 3 or more. 2 . The composition according to claim 1 , wherein the wavelength band B is on a longer wavelength side than the wavelength band A. 3 . The composition according to claim 1 , wherein the wavelength band B is on a shorter wavelength side than the wavelength band A. 4 . The composition according to claim 1 , wherein a ratio A min /B max between the minimum value A min of the absorbance in a wavelength range of 1 to 3 μm and the maximum value B max of the absorbance in a wavelength range of 8 to 10 μm is 3 or more. 5 . The composition according to claim 1 , wherein a ratio A min /B max between the minimum value A min of the absorbance in a wavelength range of 3 to 5 μm and the maximum value B max of the absorbance in a wavelength range of 8 to 10 μm is 3 or more. 6 . The composition according to claim 1 , wherein a ratio A min /B max between the minimum value A min of the absorbance in a wavelength range of 8 to 10 μm and the maximum value B max of the absorbance in a wavelength range of 12 to 14 μm is 3 or more. 7 . The composition according to claim 1 , wherein a ratio A min /B max between the minimum value A min of the absorbance in a wavelength range of 12 to 14 μm and the maximum value B max of the absorbance in a wavelength range of 8 to 10 μm is 3 or more. 8 . The composition according to claim 1 , wherein a band gap energy of the metal particle at 25° C. is 1.0 eV or less. 9 . The composition according to claim 1 , wherein the metal particle includes at least one metal atom selected from the group consisting of Rh, W, Ta, Cr, Bi, Ag, Fe, Co, Mg, Mn, Ba, V, Pb, Ti, Sr, and Zr. 10 . A formed body obtained by using the composition according to claim 1 . 11 . The formed body according to claim 10 , wherein an average refractive index is 1.3 to 5.0 in a wavelength range of 8 to 14 μm. 12 . The formed body according to claim 10 , wherein a shape of the formed body is a film shape, a flat sheet shape, or a lens shape. 13 . The formed body according to claim 10 , which is used for a far infrared ray transmitting filter. 14 . A laminate comprising: a substrate; and the formed body according to claim 10 provided on the substrate. 15 . The laminate according to claim 14 , wherein a refractive index n1 of the formed body at a wavelength of 10 μm and a refractive index n2 of a layer that is in contact with the formed body in a thickness direction of the formed body at a wavelength of 10 μm satisfy the following relationship, ( n 2) 0.5 −1≤ n 1≤( n 2) 0.5 +1. 16 . A far infrared ray transmitting filter comprising: the formed body according to claim 10 . 17 . A far infrared ray transmitting filter comprising: the laminate according to claim 14 . 18 . A solid-state imaging element comprising: the far infrared ray transmitting filter according to claim 16 . 19 . An infrared camera comprising: the far infrared ray transmitting filter according to claim 16 . 20 . An infrared sensor comprising: the far infrared ray transmitting filter according to claim 16 .
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