Crucible and vapor deposition method

Patent metadata

Field	Value
Publication number	US-2019136366-A1
Application number	US-201816057944-A
Country	US
Kind code	A1
Filing date	Aug 8, 2018
Priority date	Nov 8, 2017
Publication date	May 9, 2019
Grant date	—

Abstract

The present application provides a crucible includes a first crucible and a second crucible disposed in the first crucible, wherein a cavity structure is formed between the first crucible and the second crucible so that a cross-section of the cavity is an annular shape; the cavity is configured to accommodate a vapor deposition material, a first heating component is arranged surround an outer wall surface of the first crucible facing away from the second crucible, a second heating component is arranged around the inner wall surface of the second crucible facing away from the first crucible, the crucible further includes a heating control system that controls different heating durations of the first heating component and the second heating component. With the above arrangement, the crucible of the present application is free from the problem of deformation or cracking. The present application also provides a crucible vapor deposition method.

First claim

What is claimed is:

1 . A crucible, comprising a first crucible and a second crucible disposed in the first crucible, wherein a cavity structure is formed between the first crucible and the second crucible so that a cross-section of the cavity is an annular shape; the cavity is configured to accommodate a vapor deposition material, a first heating component is arranged surround an outer wall surface of the first crucible facing away from the second crucible, a second heating component is arranged around an inner wall surface of the second crucible facing away from the first crucible, the crucible further comprises a heating control system that controls different heating durations of the first heating component and the second heating component.

2 . The crucible according to claim 1 , wherein the first heating component is disposed close to the outer wall surface of the first crucible, and the second heating component is disposed close to the inner wall surface of the second crucible.

3 . The crucible according to claim 1 , wherein the heating temperature provided by the first heating component and the second heating component ranges from 400° C. to 1500° C.

4 . The crucible according to claim 2 , wherein the heating temperature provided by the first heating component and the second heating component ranges from 400° C. to 1500° C.

5 . The crucible according to claim 1 , wherein the crucible further comprises a cover, the cover covers an end of a top of the cavity, the cover has an opening.

6 . The crucible according to claim 5 , wherein the cover has a plurality of openings arranged around an annular shape of the first crucible.

7 . The crucible according to claim 1 , wherein the first crucible and the second crucible are round shape, and the diameter of the second crucible is 30%-60% of the diameter of the first crucible.

8 . The crucible according to claim 1 , wherein the cavity is provided with a temperature sensor.

9 . A crucible vapor deposition method, comprising the steps of:
providing a crucible, comprising a first crucible and a second crucible disposed in the first crucible, forming a cavity structure between the first crucible and the second crucible, embedding a vapor deposition material in the cavity; disposing a first heating component surround an outer wall surface of the first crucible facing away from the second crucible and disposing a second heating component surround an inner wall surface of the second crucible facing away from the first crucible; turning on the first heating component and the second heating component simultaneous by a heating control system to increase a temperature for sublimating, melting or evaporating the vapor deposition material; turning off the second heating component after the vapor deposition is completed, maintaining the first heating component in a heated state and then turning off the first heating component when the vapor deposition material is separated from the first crucible.

10 . The crucible vapor deposition method according to claim 9 , wherein the heating temperature of the first heating component and the second heating component is controlled to be in the range of 400° C. to 1500° C.

11 . The crucible vapor deposition method according to claim 10 , wherein the heating temperature of the first heating component and the second heating component is controlled to be in the range of 500° C. to 1200° C.

Assignees

• Shenzhen China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Qiao Xiaoping
• Li Jinchuan

Classifications

• C23C14/243 Primary

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title

• H01L51/001

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• C23C14/12 Primary

  Organic material · CPC title

• H10K71/40

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title