Thermally conductive silicone composition, production method thereof, and semiconductor device
US-12104113-B2 · Oct 1, 2024 · US
US2019136109A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019136109-A1 |
| Application number | US-201816181415-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 6, 2018 |
| Priority date | Nov 7, 2017 |
| Publication date | May 9, 2019 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
In an embodiment the dielectric layer comprises a fluoropolymer, a plurality of boron nitride particles, a plurality of titanium dioxide particles, a plurality of silica particles; and a reinforcing layer. The dielectric layer can comprise at least one of 20 to 45 volume percent of the fluoropolymer, 15 to 35 volume percent of the plurality of boron nitride particles, 1 to 32 volume percent of the plurality of titanium dioxide particles, 10 to 35 volume percent of the plurality of silica particles, and 5 to 15 volume percent of the reinforcing layer; wherein the volume percent values are based on a total volume of the dielectric layer.
Opening claim text (preview).
1 . A dielectric layer comprising: 25 to 45 volume percent of a fluoropolymer; 15 to 35 volume percent of a plurality of boron nitride particles; 1 to 32 volume percent of a plurality of titanium dioxide particles; 0 to 35 volume percent of a plurality of silica particles; and 5 to 15 volume percent of a reinforcing layer; wherein the volume percent values are based on a total volume of the dielectric layer. 2 . The dielectric layer of claim 1 , wherein the fluoropolymer comprises poly(chlorotrifluoroethylene), poly(chlorotrifluoroethylene-propylene), poly(ethylene-tetrafluoroethylene), poly(ethylene-chlorotrifluoroethylene), poly(hexafluoropropylene), poly(tetrafluoroethylene), poly(tetrafluoroethylene-ethylene-propylene), poly(tetrafluoroethylene-hexafluoropropylene), poly(tetrafluoroethylene-propylene), poly(tetrafluoroethylene-perfluoropropylene vinyl ether), a copolymer having a tetrafluoroethylene backbone with a fully fluorinated alkoxy side chain, polyvinylfluoride, polyvinylidene fluoride, poly(vinylidene fluoride-chlorotrifluoroethylene), perfluoropolyether, perfluorosulfonic acid, perfluoropolyoxetane, or a combination comprising at least one of the foregoing. 3 . The dielectric layer of claim 1 , wherein the fluoropolymer comprises polytetrafluoroethylene. 4 . The dielectric layer of claim 1 , wherein the dielectric layer comprises 15 to 30 volume percent of the plurality of boron nitride particles. 5 . The dielectric layer of claim 1 , wherein the plurality of boron nitride particles comprises boron nitride platelets. 6 . The dielectric layer of claim 1 , wherein the plurality of boron nitride particles has a boron nitride D 50 value of 5 to 40 micrometers. 7 . The dielectric layer of claim 1 , wherein the dielectric layer comprises 5 to 10 volume percent of the plurality of titanium dioxide particles. 8 . The dielectric layer of claim 1 , wherein the titanium dioxide comprises rutile titanium dioxide. 9 . The dielectric layer of claim 1 , wherein the plurality of titanium dioxide particles comprises irregularly shaped particles, each independently having a plurality of flat surfaces. 10 . The dielectric layer of claim 1 , wherein the titanium dioxide D 50 value is 1 to 40 micrometers. 11 . The dielectric layer of claim 1 , wherein the dielectric layer comprises 15 to 25 volume percent of the plurality of silica particles. 12 . The dielectric layer of claim 1 , wherein the plurality of silica particles has a silica D 50 value of 5 to 15 micrometers. 13 . The dielectric layer of claim 1 , wherein the silica comprises amorphous silica. 14 . The dielectric layer of claim 1 , wherein one or more of the plurality of boron nitride particles, the plurality of titanium dioxide particles, and the plurality of silica particles comprise a surface treatment. 15 . The dielectric layer of claim 1 , wherein the reinforcing layer comprises a woven fiberglass reinforcement or a non-woven fiberglass reinforcement. 16 . A method of making the dielectric layer of claim 1 , comprising: impregnating the reinforcing layer with a mixture comprising the fluoropolymer, the plurality of boron nitride particles, the plurality of titanium dioxide particles, and the plurality of silica particles to form the dielectric layer; wherein the impregnating optionally comprises dip coating or casting. 17 . A method of making the dielectric layer of claim 1 , comprising: forming a mixture comprising the fluoropolymer, the plurality of boron nitride particles, the plurality of titanium dioxide particles, the plurality of silica particles, and a plurality of glass fibers; and forming the dielectric layer from the mixture; wherein the forming the dielectric layer optionally comprises paste extruding and calendering. 18 . An article comprising the dielectric layer of claim 1 . 19 . A multilayer circuit board comprising the dielectric layer of claim 1 . 20 . The multilayer circuit board of claim 19 , wherein the dielectric layer has a z-direction thermal conductivity of 1 to 2 W/mK.
Organic materials · CPC title
having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title
Homopolymers or copolymers of tetrafluoroethene · CPC title
with silicon-containing compounds · CPC title
Flakes, flat particles or lamellar particles · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.