Electrode With Two Layer Coating, Method of Use, and Preparation Thereof
US-2017356095-A1 · Dec 14, 2017 · US
US2019119822A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019119822-A1 |
| Application number | US-201716096740-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 31, 2017 |
| Priority date | Apr 27, 2016 |
| Publication date | Apr 25, 2019 |
| Grant date | — |
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The present invention relates to an electrode comprising an electrically conductive substrate of which at least one portion of the surface is covered with a metal deposit of copper, the surface of said deposit being in an oxidised, sulphurised, selenised and/or tellurised form and the deposit having a specific surface area of more than 1 m 2 /g; a method for preparing such an electrode; and a method for oxygenising water with dioxygen involving such an electrode.
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1 . An electrode comprising an electrically conductive substrate of which at least one part of the surface is covered with a copper metal deposit, the surface of said deposit being in an oxidized, sulphurized, selenized and/or tellurized form and the deposit having a specific surface area greater than or equal to 1 m 2 /g. 2 . The electrode according to claim 1 , wherein the electrically conductive substrate consists, at least in part, of an electrically conductive material selected from a metal; a metal oxide; a metal sulphide; carbon; a semiconductor; and a mixture thereof. 3 . The electrode according to claim 1 , wherein the metal deposit has a thickness comprised between 10 μm and 2 mm. 4 . The electrode according to claim 1 , wherein the metal deposit has a specific surface area comprised between 1 m 2 /g and 500 m 2 /g. 5 . The electrode according to claim 1 , wherein the metal deposit has a porous structure with an average pore size comprised between 10 μm and 500 μm. 6 . The electrode according to claim 1 , wherein the surface of the metal deposit is in an oxidized and/or sulphurized form. 7 . A process for preparing an electrode according to claim 1 comprising the following successive steps: (i) electrodeposition of copper on at least one part of the surface of an electrically conductive substrate so as to form a metal deposit of said copper on said at least one part of the surface of the electrically conductive substrate, and (ii) oxidation, sulphurization, selenization and/or tellurization of the surface of the metal deposit. 8 . The process according to claim 7 , wherein step (i) is carried out according to the following successive steps: (a) at least partial immersion of the electrically conductive substrate in an acidic aqueous solution containing ions of the copper to be deposited, and (b) application of a current between the electrically conductive substrate and a second electrode. 9 . The process according to claim 8 , wherein the acidic aqueous solution containing ions of the copper to be deposited is an acidic aqueous solution containing a water-soluble salt of the copper to be deposited. 10 . The process according to claim 8 , wherein the current of step (b) has a current density comprised between 0.1 mA/cm 2 and 5 A/cm 2 . 11 . The process according to claim 7 , wherein step (ii) comprises: an oxidation, sulphurization, selenization and/or tellurization step carried out at a temperature comprised between 30 and 700° C., wherein the oxidation step is carried out in an atmosphere containing dioxygen or in the presence of H 2 O, the sulphurization step is carried out in the presence of elemental sulphur or H 2 S, the selenization step is carried out in the presence of elemental selenium or H 2 Se, and the tellurization step is carried out in the presence of elemental tellurium or H 2 Te, and optionally an annealing step carried out at a temperature comprised between 50° C. and 1000° C. 12 . The process according to claim 7 , wherein step (ii) is followed by a step (iii) carried out according to the following successive steps: (1) immersion at least of the part of the electrically conductive substrate covered with a metal deposit the outer surface of which is oxidized, sulphurized, selenized and/or tellurized obtained in step (ii) in a solution containing copper ions, and (2) application of a potential between the electrically conductive substrate and a second electrode, the electric potential applied to the electrically conductive substrate being negative then positive, wherein step (iii) may be repeated once or several times. 13 . An electrode obtainable by a process according to claim 7 . 14 . An electrochemical device comprising an electrode according to claim 1 . 15 . The electrochemical device according to claim 14 , being an electrolysis device or a fuel cell. 16 . A process for oxidizing water to dioxygen comprising the application of an electric current between an anode and a cathode, the anode being an electrode according to claim 1 immersed in water or in a fluid containing water. 17 . The electrode according to claim 2 , wherein the metal is copper, steel, aluminium, or zinc; the metal oxide is fluorine-doped tin oxide (FTO) or indium tin oxide (ITO); the metal sulphide is cadmium sulphide or zinc sulphide; the carbon is in the form of carbon felt, graphite, vitreous carbon, or boron-doped diamond; and the semiconductor is silicon. 18 . The electrode according to claim 4 , wherein the metal deposit has a specific surface area comprised between 3 m 2 /g and 50 m 2 /g. 19 . The electrode according to claim 5 , wherein the metal deposit has a porous structure with an average pore size comprised between 30 μm and 70 μm. 20 . The process according to claim 9 , wherein the water-soluble salt of the copper to be deposited is selected from CuSO 4 , CuCl 2 , Cu(ClO 4 ) 2 , and a mixture thereof.
Electrodeposition · CPC title
of copper · CPC title
by electrolysis of water · CPC title
Oxides, hydroxides or oxygenated metallic salts · CPC title
After-treatment of electroplated surfaces · CPC title
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