Metal / Metal Chalcogenide Electrode With High Specific Surface Area

US2019119822A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2019119822-A1
Application numberUS-201716096740-A
CountryUS
Kind codeA1
Filing dateMar 31, 2017
Priority dateApr 27, 2016
Publication dateApr 25, 2019
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present invention relates to an electrode comprising an electrically conductive substrate of which at least one portion of the surface is covered with a metal deposit of copper, the surface of said deposit being in an oxidised, sulphurised, selenised and/or tellurised form and the deposit having a specific surface area of more than 1 m 2 /g; a method for preparing such an electrode; and a method for oxygenising water with dioxygen involving such an electrode.

First claim

Opening claim text (preview).

1 . An electrode comprising an electrically conductive substrate of which at least one part of the surface is covered with a copper metal deposit, the surface of said deposit being in an oxidized, sulphurized, selenized and/or tellurized form and the deposit having a specific surface area greater than or equal to 1 m 2 /g. 2 . The electrode according to claim 1 , wherein the electrically conductive substrate consists, at least in part, of an electrically conductive material selected from a metal; a metal oxide; a metal sulphide; carbon; a semiconductor; and a mixture thereof. 3 . The electrode according to claim 1 , wherein the metal deposit has a thickness comprised between 10 μm and 2 mm. 4 . The electrode according to claim 1 , wherein the metal deposit has a specific surface area comprised between 1 m 2 /g and 500 m 2 /g. 5 . The electrode according to claim 1 , wherein the metal deposit has a porous structure with an average pore size comprised between 10 μm and 500 μm. 6 . The electrode according to claim 1 , wherein the surface of the metal deposit is in an oxidized and/or sulphurized form. 7 . A process for preparing an electrode according to claim 1 comprising the following successive steps: (i) electrodeposition of copper on at least one part of the surface of an electrically conductive substrate so as to form a metal deposit of said copper on said at least one part of the surface of the electrically conductive substrate, and (ii) oxidation, sulphurization, selenization and/or tellurization of the surface of the metal deposit. 8 . The process according to claim 7 , wherein step (i) is carried out according to the following successive steps: (a) at least partial immersion of the electrically conductive substrate in an acidic aqueous solution containing ions of the copper to be deposited, and (b) application of a current between the electrically conductive substrate and a second electrode. 9 . The process according to claim 8 , wherein the acidic aqueous solution containing ions of the copper to be deposited is an acidic aqueous solution containing a water-soluble salt of the copper to be deposited. 10 . The process according to claim 8 , wherein the current of step (b) has a current density comprised between 0.1 mA/cm 2 and 5 A/cm 2 . 11 . The process according to claim 7 , wherein step (ii) comprises: an oxidation, sulphurization, selenization and/or tellurization step carried out at a temperature comprised between 30 and 700° C., wherein the oxidation step is carried out in an atmosphere containing dioxygen or in the presence of H 2 O, the sulphurization step is carried out in the presence of elemental sulphur or H 2 S, the selenization step is carried out in the presence of elemental selenium or H 2 Se, and the tellurization step is carried out in the presence of elemental tellurium or H 2 Te, and optionally an annealing step carried out at a temperature comprised between 50° C. and 1000° C. 12 . The process according to claim 7 , wherein step (ii) is followed by a step (iii) carried out according to the following successive steps: (1) immersion at least of the part of the electrically conductive substrate covered with a metal deposit the outer surface of which is oxidized, sulphurized, selenized and/or tellurized obtained in step (ii) in a solution containing copper ions, and (2) application of a potential between the electrically conductive substrate and a second electrode, the electric potential applied to the electrically conductive substrate being negative then positive, wherein step (iii) may be repeated once or several times. 13 . An electrode obtainable by a process according to claim 7 . 14 . An electrochemical device comprising an electrode according to claim 1 . 15 . The electrochemical device according to claim 14 , being an electrolysis device or a fuel cell. 16 . A process for oxidizing water to dioxygen comprising the application of an electric current between an anode and a cathode, the anode being an electrode according to claim 1 immersed in water or in a fluid containing water. 17 . The electrode according to claim 2 , wherein the metal is copper, steel, aluminium, or zinc; the metal oxide is fluorine-doped tin oxide (FTO) or indium tin oxide (ITO); the metal sulphide is cadmium sulphide or zinc sulphide; the carbon is in the form of carbon felt, graphite, vitreous carbon, or boron-doped diamond; and the semiconductor is silicon. 18 . The electrode according to claim 4 , wherein the metal deposit has a specific surface area comprised between 3 m 2 /g and 50 m 2 /g. 19 . The electrode according to claim 5 , wherein the metal deposit has a porous structure with an average pore size comprised between 30 μm and 70 μm. 20 . The process according to claim 9 , wherein the water-soluble salt of the copper to be deposited is selected from CuSO 4 , CuCl 2 , Cu(ClO 4 ) 2 , and a mixture thereof.

Assignees

Inventors

Classifications

  • Electrodeposition · CPC title

  • of copper · CPC title

  • by electrolysis of water · CPC title

  • Oxides, hydroxides or oxygenated metallic salts · CPC title

  • After-treatment of electroplated surfaces · CPC title

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What does patent US2019119822A1 cover?
The present invention relates to an electrode comprising an electrically conductive substrate of which at least one portion of the surface is covered with a metal deposit of copper, the surface of said deposit being in an oxidised, sulphurised, selenised and/or tellurised form and the deposit having a specific surface area of more than 1 m 2 /g; a method for preparing such an electrode; and a m…
Who is the assignee on this patent?
Paris Sciences Lettres Quartier Latin, Centre Nat Rech Scient, Univ Sorbonne
What technology area does this patent fall under?
Primary CPC classification C25B11/0484. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Apr 25 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).