Method of manufacturing metal oxide film and display device including metal oxide film

Patent metadata

Field	Value
Publication number	US-2019115409-A1
Application number	US-201816132031-A
Country	US
Kind code	A1
Filing date	Sep 14, 2018
Priority date	Oct 13, 2017
Publication date	Apr 18, 2019
Grant date	—

Abstract

A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

First claim

What is claimed is:

1 . A method of manufacturing a metal oxide film, the method comprising:
injecting a reaction gas and metal precursors into a chamber; forming a first metal precursor film on a substrate in a plasma OFF state; forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state; and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, wherein the metal oxide film has an amorphous phase, a thickness of about 20 nanometers to about 130 nanometers, and a dielectric constant of about 10 to about 50.

2 . The method of claim 1 , wherein the metal precursors comprise at least one of zirconium-based, hafnium-based, and titanium-based materials.

3 . The method of claim 2 , wherein the metal precursors comprise at least one of Zr(N(CH3)2(C2H5))3, Zr(N(CH3)C2H5)4, Zr(OC(CH3)3)4, Ti(N(CH3)2(C2H5)), Hf(N(CH3)3(C2H5))3, Hf(N(CH3)C2H5))4, and Hf(OC(CH3)3)4.

4 . The method of claim 2 , wherein the metal oxide film comprises at least one of zirconium oxide, hafnium oxide, and titanium oxide.

5 . The method of claim 1 , further comprising forming a second sub metal oxide film by oxidizing the second metal precursor film in the plasma ON state.

6 . The method of claim 1 , wherein the forming the first sub-metal oxide film by oxidizing the first metal precursor film in the plasma ON state and the forming the second metal precursor film on the first sub-metal oxide film in the plasma OFF state are performed one or more times.

7 . The method of claim 1 , wherein a pressure inside the chamber is about 0.1 torr to about 10 torr.

8 . The method of claim 1 , wherein a temperature inside the chamber is about 100 degrees Celsius to about 400 degrees Celsius.

9 . The method of claim 1 , wherein the injecting the reaction gas and the metal precursors into the chamber comprises injecting a carrier gas together with the metal precursors.

10 . The method of claim 1 , wherein a time interval of the plasma ON state and a time interval of the plasma OFF state are equal.

11 . The method of claim 1 , wherein a ratio of a time interval of the plasma ON state and a time interval of the plasma OFF state is one of 1:2, 1:3, 1:4, and 1:5.

12 . A display device comprising:
a substrate; and a metal oxide film disposed on the substrate, wherein the metal oxide film has an amorphous phase, a thickness of about 20 nanometers to about 130 nanometers, and a dielectric constant of about 10 to about 50.

13 . The display device of claim 12 , further comprising a first electrode and a second electrode disposed with the metal oxide film interposed between the first electrode and the second electrode, wherein the first electrode, the second electrode, and the metal oxide film constitute a capacitor.

14 . The display device of claim 13 , wherein the thickness of the metal oxide film is about 90 nanometers to about 130 nanometers.

15 . The display device of claim 13 , further comprising an insulating film disposed between the second electrode and the metal oxide film.

16 . The display device of claim 15 , wherein the insulating film comprises at least one of silicon oxide, silicon nitride, and silicon oxynitride.

17 . The display device of claim 16 , wherein the thickness of the metal oxide film is about 60 nanometers to about 80 nanometers.

18 . The display device of claim 17 , wherein a thickness of the insulating film is about 30 nanometers to about 50 nanometers.

19 . The display device of claim 12 , wherein the metal oxide film comprises at least one of zirconium oxide, hafnium oxide, and titanium oxide.

20 . The display device of claim 12 , further comprising:
a transparent electrode disposed on the metal oxide film; an organic light emitting layer disposed on the transparent electrode; and a common electrode disposed on the organic light emitting layer.

21 . An apparatus for manufacturing a metal oxide film, the apparatus comprising:
a chamber; a susceptor which is disposed inside the chamber and configured to support a substrate; a shower head which faces the susceptor; and a power supply unit which supplies radio frequency power to the shower head, wherein a plasma ON state in which electric power is supplied to the shower head and a plasma OFF state in which no electric power is supplied to the shower head are defined and alternate with each other, wherein a plasma region is provided between the shower head and the susceptor in the plasma ON state.

22 . The apparatus of claim 21 , wherein a time interval of the plasma ON state and a time interval of the plasma OFF state are equal.

23 . The apparatus of claim 21 , wherein a pressure inside the chamber is about 0.1 torr to about 10 torr, and a temperature inside the chamber is about 100 degrees Celsius to about 400 degrees Celsius.

Assignees

• Samsung Display Co Ltd

Inventors

• Huh Myung Soo
• Ko Dong Kyun
• Kim Sung Chul
• Kim Woo Jin
• Roh Cheol Lae
• Park Keun Hee

Classifications

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title