Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US2019103387A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019103387-A1 |
| Application number | US-201715854755-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 27, 2017 |
| Priority date | Sep 30, 2017 |
| Publication date | Apr 4, 2019 |
| Grant date | — |
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Provided are a PoP device and a method of manufacturing the same. The PoP device includes a first package structure and a second package structure. The first package structure includes a die, a through integrated fan-out via (TIV), an encapsulant, and a film. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The film is over the TIV and the encapsulant, and aside the die. The second package structure is connected to the first package structure through a connector. The connector penetrates through the film to electrically connected to the TIV.
Opening claim text (preview).
1 . A package-on-package (PoP) device, comprising: a first package structure, comprising: a die; a through integrated fan-out via (TIV) aside the die; an encapsulant encapsulating sidewalls of the die and sidewalls of the TIV; and a film over the TIV and the encapsulant, and aside the die; and a second package structure, connected to the first package structure through a connector, wherein the connector penetrates through the film to electrically connected to the TIV,. wherein the film is surrounded by the encapsulant. 2 . The PoP device of claim 1 , further comprising an underfill layer, disposed to fill a space between the first package structure and the second package structure, and suiTound the connector, wherein a portion of the underfill layer is between the connector and the film, and aside the die. 3 . The PoP device of claim 2 , wherein the first package structure further comprising an adhesive layer disposed between the die and the underfill layer. 4 . The PoP device of claim 3 , wherein a top surface of the TIV and a bottom surface of the connector are lower than a top surface of the adhesive layer, and lower than a top surface of the die. 5 . The PoP device of claim 4 , wherein a top surface of the film, a top surface of the encapsulant, and the top surface of the adhesive layer are coplanar with each other. 6 . The PoP device of claim 3 , wherein the first package structure further comprising a dielectric layer, disposed between the underfill layer and the adhesive layer, between the underfill layer and the encapsulant, and between the underfill layer and the film, wherein the connector further penetrates through the dielectric layer on the film. 7 . The PoP device of claim 6 , wherein a portion of the encapsulant is separated from the dielectric layer by the film therebetween. 8 . The PoP device of claim 1 , wherein the encapsulant has a stepped structure comprising a first portion and a second portion connected to each other; the first portion encapsulates sidewalls of the TIV, the second portion is between the first portion and the die and encapsulates sidewalls of the die; a top surface of the first portion is lower than a top surface of the second portion; and the film is located over the first portion and aside the second portion of the encapsulant. 9 . The PoP device of claim 1 , wherein the first package structure further comprises a conductive terminal, electrically connected to the die though a redistribution layer (RDL) structure. 10 . (withdrawn and currently amended) A PoP device, comprising: a first package structure, comprising: a die; a TIV aside the die; an encapsulant aside the die and the TIV, encapsulating sidewalls of the die and sidewalls of the TIV; a film, over the TIV and aside the die, and surrounded by the encapsulant; and a conductive terminal, electrically connected to the die and the TIV through a redistribution layer (RDL) structure; and a second package structure electrically connected to the first package structure though a connector, wherein the connector is in electrical contact with a top surface of the TIV, wherein a portion of the connector is aside the die, and a bottom surface of the connector is lower than a top surface of the die. 11 . The PoP device of claim 10 , further comprising an underfill layer, disposed to fill a space between the first package structure and the second package structure, and surround the connector, wherein a portion of the underfill layer is located aside the die. 12 . The PoP device of claim 11 , wherein the first package structure further comprises a dielectric layer disposed between the underfill layer and the die, and between the underfill layer and the encapsulant. 13 . The PoP device of claim 12 , wherein the connector is penetrating through the dielectric layer. 14 . The PoP device of claim 13 , wherein a bottom surface of the dielectric layer is higher than the bottom surface of the connector. 15 . (withdrawn and currently amended) A method of manufacturing a PoP device, comprising: forming a first package structure, comprising: forming a film and attaching a die on a carrier, wherein the film is disposed aside the die; forming a TIV on the film and aside the die; forming an encapsulant aside the die, the TIV and the film, and on the film, encapsulating sidewalls of the die and sidewalls of the TIV; releasing the carrier; and removing a portion of the film, and forming a recess in the film, the recess exposes a top surface of the TIV; and electrically connecting a second package structure to the first package structure though a connector, wherein the connector fills in the recess of the film to be in electrical contact with the wherein the film is surrounded by the encapsulant. 16 . The method of claim 15 , further comprises forming an underfill layer, disposed to fill a space between the first package structure and the second package structure, and fill in the recess of the film to surround the connector. 17 . The method of claim 16 , wherein forming the first package structure further comprises forming a dielectric layer on the carrier before the film is formed and the die is attached. 18 . The method of claim 17 , wherein before removing a portion of the film, further comprises removing a portion of the dielectric layer, so as to form an opening in the dielectric layer, and the opening is located over the recess of the film. 19 . The method of claim 18 , wherein the connector and the underfill layer further fills in the opening of the dielectric layer. 20 . The method of claim 15 , wherein before the carrier is released, forming the first package structure further comprises: forming a redistribution layer (RDL) structure on the die, the encapsulant and the TIV; and forming a conductive terminal on the RDL structure, wherein the conductive terminal electrically connects to the die through the RDL structure.
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