Photovoltaic Devices and Method of Making

Patent metadata

Field	Value
Publication number	US-2019097079-A1
Application number	US-201816200423-A
Country	US
Kind code	A1
Filing date	Nov 26, 2018
Priority date	Jun 7, 2013
Publication date	Mar 28, 2019
Grant date	—

Abstract

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

First claim

1 . A photovoltaic device, comprising:
a layer stack; and an absorber layer disposed on the layer stack, the absorber layer having a light incident side proximate to the layer stack and a back side opposite the light incident side, wherein:
the absorber layer comprises cadmium, tellurium, and selenium;
an atomic concentration of selenium varies across a thickness of the absorber layer;
the atomic concentration of selenium in the absorber layer is greater proximate to the light incident side relative to the back side of the absorber layer;
the absorber layer has a band gap which varies across a thickness of the absorber layer; and
the band gap is lower proximate to the light incident side relative to the back side of the absorber layer.

2 . The photovoltaic device of claim 1 , wherein the band gap of the absorber layer is less than or equal to about 1.5 eV.

3 . The photovoltaic device of claim 1 , wherein the band gap decreases across a thickness of the absorber layer from the back side to the light incident side.

4 . The photovoltaic device of claim 1 ,
wherein the absorber layer comprises a CdTe 1-x Se x alloy, where 0<x<1, wherein band gap properties of the CdTe 1-x Se x alloy vary as a function of x, and the band gap of the alloy is:
Eg ,alloy =xEg ,CdSe +(1− x ) Eg ,CdTe −bx (1− x )

wherein a bowing parameter, b=0.8.

5 . The photovoltaic device of claim 4 , wherein the absorber layer comprises the CdTe 1-x Se x alloy, where 0<x<0.4.

6 . The photovoltaic device of claim 4 , wherein the atomic concentration of selenium in the absorber layer varies from about x=0.2, proximate to the light incident side, to about x=0.006, proximate to the back side of the absorber layer.

7 . The photovoltaic device of claim 1 , wherein the layer stack comprises:
a transparent conductive layer disposed on a support; and a buffer layer disposed between the transparent conductive layer and the absorber layer.

8 . The photovoltaic device of claim 1 , wherein the atomic concentration of selenium in the absorber layer has a profile comprising an exponential profile, a top-hat profile, a step-change profile, a saw-tooth profile, a square-wave profile, a power law profile, or combinations thereof.

9 . The photovoltaic device of claim 1 , wherein a peak of a Se/(Se+Te) ratio of the absorber layer is located at a front interface of the absorber layer, proximate to the layer stack, and, wherein the peak of the Se/(Se+Te) ratio of the absorber layer is less than 0.40.

10 . The photovoltaic device of claim 1 , wherein at least a portion of the absorber layer comprising cadmium, selenium, and tellurium is a ternary compound or a quaternary compound.

11 . The photovoltaic device of claim 1 , wherein the absorber layer further comprises sulfur, oxygen, copper, chlorine, lead, zinc, mercury, or combinations thereof.

12 . A photovoltaic device, comprising:
a layer stack comprising a transparent conductive oxide; and an absorber layer disposed on the layer stack, the absorber layer comprising:
a CdTe 1-x Se x alloy, where 0<x<1, wherein band gap properties of the CdTe 1-x Se x alloy vary as a function of x, and the band gap of the alloy is:
Eg ,alloy =xEg ,CdSe +(1− x ) Eg ,CdTe −bx (1− x )

where a bowing parameter, b=0.8; and

wherein an atomic concentration of selenium varies across a thickness of the absorber layer.

13 . The photovoltaic device of claim 12 , wherein the band gap of the absorber layer is less than or equal to about 1.5 eV.

14 . The photovoltaic device of claim 12 , comprising a first region and a second region, wherein:
the first region is disposed proximate to the layer stack relative to the second region, the first region is disposed at a front interface of the absorber layer, the second region is disposed at a back interface of the absorber layer, and wherein band gap in the first region is lower than in the second region.

15 . The photovoltaic device of claim 14 , wherein,
the first region has a thickness between 100 nanometers to 3000 nanometers, the second region has a thickness between 100 nanometers to 3000 nanometers, a ratio of an average atomic concentration of selenium in the first region to an average atomic concentration of selenium in the second region is greater than 2, and the average atomic concentration of selenium in the absorber layer is in a range from 0.01 atomic percent to 25 atomic percent of the absorber layer.

16 . A method of making a photovoltaic device, comprising:
providing an absorber layer on a layer stack, wherein the absorber layer comprises selenium, and wherein an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer.

17 . The method of claim 16 , wherein the atomic concentration of selenium varies non-monotonically across a thickness of the absorber layer.

18 . The method of claim 16 , wherein the step of providing an absorber layer comprises:
disposing a selenium source layer on the layer stack, wherein the selenium source comprises elemental selenium, cadmium selenide, hydrogen selenide, organo-metallic selenium, or combinations thereof; disposing a semiconductor material on the selenium source layer, wherein the semiconductor material comprises cadmium and tellurium; and introducing selenium from the selenium source layer into at least a portion of the absorber layer.

19 . The method of claim 18 , wherein the selenium source layer has an average thickness in a range from about 1 nanometer to about 1000 nanometers.

20 . The method of claim 16 , wherein the step of providing an absorber layer comprises co-depositing a selenium source material and a semiconductor material.

Assignees

• First Solar Inc

Inventors

• Blaydes Holly Ann
• Andreini Kristian William
• Huber William Hullinger
• Hinners Eugene Thomas
• Shiang Joseph John
• Liang Yong
• Choi Jongwoo
• Halverson Adam Fraser

Classifications

• Y02E10/543

  Solar cells from Group II-VI materials · CPC title

• H01L31/022425

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/073

  Electricity · mapped topic

• H01L31/065

  Electricity · mapped topic