Method for manufacturing ultra-capacity battery

US2019074141A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2019074141-A1
Application numberUS-201816179456-A
CountryUS
Kind codeA1
Filing dateNov 2, 2018
Priority dateDec 11, 2015
Publication dateMar 7, 2019
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for manufacturing an ultra-capacity battery includes providing cathodes and anodes. Providing the cathodes includes providing a first substrate having a first surface and a second surface opposite the first surface, forming a plurality of first combs perpendicular to the first surface of the first substrate and arranged at a first interval along a first direction, forming a graphene layer on the first combs and on the first surface of the first substrate. Providing the anodes includes providing a second substrate having a first surface and a second surface, forming a patterned insulating film on the first surface of the second substrate exposing a portion of the first surface of the second substrate, etching the exposed portion of the first surface of the second substrate to form a body portion and a plurality of second combs perpendicular to the body portion.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for manufacturing an ultra-capacity battery comprising: preparing a plurality of cathodes and a plurality of anodes, wherein: preparing the cathodes comprises: providing a first substrate having a first surface and a second surface opposite the first surface; forming a plurality of first combs perpendicular to the first surface of the first substrate and arranged at a first interval along a first direction; forming a graphene layer on the first combs and on the first surface of the first substrate; and preparing the anodes comprises: providing a second substrate having a first surface and a second surface; forming a patterned insulating film on the first surface of the second substrate exposing a portion of the first surface of the second substrate; etching the exposed portion of the first surface of the second substrate to form a body portion and a plurality of second combs perpendicular to the body portion, the second combs being arranged at a second interval along a second direction, the first and second direction being parallel to each other; providing a hermetically sealed container enclosing the cathodes and the anodes, wherein the first combs and the second combs are interspersed between each other and have an air gap between them; and filling the container and the air gap with an electrolyte solution. 2 . The method of claim 1 , wherein forming the first combs comprises: forming a first hardmask layer on the first surface of the first substrate; patterning the first hardmask layer to form a plurality of first openings; filling the first openings with a first comb material to form the first combs; and removing the first hardmask layer. 3 . The method of claim 2 , further comprising: forming a second hardmask layer on the second surface of the first substrate; patterning the first hardmask layer to form a plurality of second openings; filling the second openings with a third comb material to form a plurality of third combs; and removing the second hardmask layer. 4 . The method of claim 3 , further comprising forming the graphene layer on the third combs and on the second surface of the first substrate. 5 . The method of claim 4 , wherein the graphene layer comprises a multilayer graphene, or a mixture of graphene and graphite. 6 . The method of claim 3 , wherein a number of the third combs is equal to a number of the first combs. 7 . The method of claim 3 , wherein the first substrate, the first combs, and the third combs each comprise a material selected from the group consisting of Cu, Si, SiC and Sn. 8 . The method of claim 1 , wherein forming the patterned insulating film on the first surface of the second substrate also comprises forming the patterned insulating film on the second surface of the second substrate exposing a portion of the second surface of the second substrate, and the method further comprising: etching the exposed portion of the second surface of the second substrate to a depth to form a plurality of fourth combs extending perpendicularly to the body portion. 9 . The method of claim 8 , wherein a number of the fourth combs is equal to a number of the second combs.

Assignees

Inventors

Classifications

  • H01G11/26Primary

    characterised by their structure, e.g. multi-layered, porosity or surface features · CPC title

  • Nanostructures, e.g. nanofibres, nanotubes or fullerenes · CPC title

  • characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor · CPC title

  • Terminals, e.g. extensions of current collectors · CPC title

  • characterised by their structure · CPC title

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What does patent US2019074141A1 cover?
A method for manufacturing an ultra-capacity battery includes providing cathodes and anodes. Providing the cathodes includes providing a first substrate having a first surface and a second surface opposite the first surface, forming a plurality of first combs perpendicular to the first surface of the first substrate and arranged at a first interval along a first direction, forming a graphene la…
Who is the assignee on this patent?
Semiconductor Mfg Int Shanghai Corp, Semiconductor Mfg Int Beijing Corp
What technology area does this patent fall under?
Primary CPC classification H01G11/26. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Mar 07 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).