Semiconductor material, gas sensor, gas measurement apparatus, fabrication method for semiconductor material and hydrogen sulfide concentration measurement method

Patent metadata

Field	Value
Publication number	US-2019067585-A1
Application number	US-201816048849-A
Country	US
Kind code	A1
Filing date	Jul 30, 2018
Priority date	Aug 22, 2017
Publication date	Feb 28, 2019
Grant date	—

Abstract

A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.

First claim

What is claimed is:

1 . A semiconductor material, comprising:
polythiophene; sulfonic acid; and copper ion; wherein the copper ion is bonded to the sulfonic acid.

2 . The semiconductor material according to claim 1 , wherein
the copper ion includes monovalent copper ion and the monovalent copper ion is bonded to the sulfonic acid.

3 . The semiconductor material according to claim 1 , wherein
the polythiophene includes poly 3,4-ethylene dioxythiophene and the sulfonic acid includes poly 4-styrene sulfonic acid.

4 . The semiconductor material according to claim 3 , wherein
the semiconductor material is amorphous.

5 . The semiconductor material according to claim 1 , wherein
copper (II) bromide is mixed in the semiconductor material and the semiconductor material is aqueous solution.

6 . A gas sensor, comprising:
a detection body that is produced using the semiconductor material according to claim 1 and detects measurement target gas within gas.

7 . The gas sensor according to claim 6 , wherein
the gas sensor has a characteristic in which the gas sensor is likely to react to hydrogen sulfide but is less likely to react to any other materials.

8 . A fabrication method for a gas sensor, comprising:
producing a detection body by applying and drying the semiconductor material according to claim 5 and that is aqueous solution.

9 . The fabrication method for a gas sensor according to claim 8 , wherein
the gas sensor has a characteristic in which the gas sensor is likely to react to hydrogen sulfide but is less likely to react to any other materials.

10 . A gas measurement apparatus, comprising:
the gas sensor according to claim 6 , wherein, using the gas sensor, resistance variation of the detection body is observed to perform measurement of the measurement target gas.

11 . The gas measurement apparatus according to claim 10 , wherein
the gas measurement apparatus performs measurement of aqueous solution.

12 . A fabrication method for a semiconductor material, comprising:
fabricating the semiconductor material that includes polythiophene, the sulfonic acid and copper ion and in which the copper ion is bonded to sulfonic acid by adding copper halide to give the copper ion.

13 . The fabrication method for a semiconductor material according to claim 12 , wherein
the copper ion includes monovalent copper ion and the monovalent copper ion is bonded to the sulfonic acid.

14 . The fabrication method for a semiconductor material according to claim 12 , wherein
the copper halide is copper (II) bromide.

15 . A hydrogen sulfide concentration measurement method for measuring a concentration of hydrogen sulfide, comprising:
performing conversion into a concentration of the hydrogen sulfide based on an inclination of time variation of a resistance variation rate of the detection body just after contacting with the measurement target gas by the gas measurement apparatus according claim 11 .

Assignees

• Fujitsu Ltd

Inventors

• Momose Satoru
• Ushigome Michio
• Tsuboi Osamu

Classifications

• G01N33/0044 Primary

  Sulphides, e.g. H2S · CPC title

• G01N27/125

  Composition of the body, e.g. the composition of its sensitive layer · CPC title

• H01L51/004

  Electricity · mapped topic

• H01L51/0037 Primary

  Electricity · mapped topic

• H10K85/141

  comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE · CPC title