Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

Patent metadata

Field	Value
Publication number	US-2019062157-A1
Application number	US-201816015640-A
Country	US
Kind code	A1
Filing date	Jun 22, 2018
Priority date	Aug 25, 2017
Publication date	Feb 28, 2019
Grant date	—

Abstract

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.
The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

First claim

1 . A micro-electro-mechanical-systems processing method in a processing apparatus,
the processing apparatus including: an irradiation unit that irradiates a sample with a charged particle beam; a shape measuring unit that measures a shape of the sample; and a control unit, wherein the micro-electro-mechanical-systems is processed by a first step and a second step, in the first step,
the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample;
the shape measuring unit measures the shape of a spot hole formed in the first region of the sample; and
the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points, and
in the second step,
the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

2 . The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in the first step, the control unit sets, as the scan condition, the scan pitch and an irradiation time of the charged particle beam at each of the single field-of-view points based on the measurement results of the shape of the spot hole.

3 . The micro-electro-mechanical-systems processing method according to claim 2 , wherein
in the first step, the control unit calculates a ratio of the scan pitch and the irradiation time at each of the single field-of-view points to the scan pitch and the irradiation at a center of a beam axis of the charged particle beam.

4 . The micro-electro-mechanical-systems processing method according to claim 2 , wherein
in the first step, the control unit sets, as the scan condition, the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point not irradiated with the charged particle beam, based on the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point irradiated with the charged particle beam.

5 . The micro-electro-mechanical-systems processing method according to claim 4 , wherein
in the first step, the control unit calculates a ratio of the scan pitch and the irradiation time at the single field-of-view point not irradiated with the charged particle to the scan pitch and the irradiation time at the center of the beam axis of the charged particle beam.

6 . The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in the first step, the irradiation unit irradiates each of the single field-of-view points with the charged particle beam under a plurality of beam conditions, and the control unit sets the scan condition corresponding to each of the plurality of beam conditions.

7 . The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in the first step,
the irradiation unit irradiates the first region with the charged particle beam formed by the forming mask; and
the control unit sets the scan condition in a case of using the same forming mask, and
in the second step,
the irradiation unit irradiates the second region of the sample with the charged particle beam formed by the same forming mask as in the first step.

8 . The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in the first step,
the irradiation unit irradiates the first region with the charged particle beam formed by the forming mask, and
the control unit selects, based on the measurement results of the shape of the spot hole, the forming mask for forming the spot hole having a shape equivalent to a center of a beam axis of the charged particle beam with respect to each of the single field-of-view points.

9 . The micro-electro-mechanical-systems processing method according to claim 8 , wherein
in the first step,
the irradiation unit irradiates each of the single field-of-view points with the charged particle beam using the plurality of forming masks,
the shape measuring unit measures the shape of the spot hole corresponding to each of the forming masks, and
the control unit selects the shape of the spot hole at the center of the beam axis of the charged particle beam, and selects the forming mask for forming the spot hole having a shape equivalent to the selected shape of the spot hole with respect to each of the single field-of-view points, based on the measurement results of the shape of the spot hole corresponding to each of the forming masks.

10 . The micro-electro-mechanical-systems processing method according to claim 8 , wherein
in the first step,
the control unit sets, based on the measurement results of the shape of the spot hole, a scan condition of the charged particle beam at each of the single field-of-view points, and
in the second step,
the irradiation unit irradiates the sample with the charged particle beam based on the scan condition set in the first step and the forming mask.

11 . The micro-electro-mechanical-systems processing method according to claim 8 , wherein
in the first step, the control unit sets the same forming mask with respect to the plurality of points having substantially the same distance from the center of the beam axis of the charged particle beam, and sets a rotation angle with respect to the beam axis.

12 . The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in the first step, the shape measuring unit measures the shape of the spot hole by a secondary electron image obtained by irradiation of the charged particle beam from the irradiation unit.

13 . A micro-electro-mechanical-systems processing apparatus comprising:
an irradiation unit that irradiates a sample with a charged particle beam; a shape measuring unit that measures a shape of the sample; and a control unit, wherein the irradiation unit includes a plurality of forming masks for forming the charged particle beam, and irradiates a plurality of single field-of-view points with the charged particle beam using the same forming mask in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, the control unit selects, based on the measurement results of the shape of the spot hole, the forming mask for forming the spot hole having a shape equivalent to a center of a beam axis of the charged particle beam with respect to each of the single field-of-view points, and the irradiation unit irradiates a second region of the sample with the charged particle beam while switching the forming mask with respect to each of the single field-of-view points.

14 . The micro-electro-mechanical-systems processing apparatus according to claim 13 , wherein
the charged particle beam includes a focused spot beam.

15 . The micro-electro-mechanical-systems processing apparatus according to claim 13 , wherein
the charged particle beam includes an ion beam.

Assignees

• Hitachi Ltd

Inventors

• Watanabe Keiji
• Shichi Hiroyasu
• Sagawa Misuzu
• Mine Toshiyuki
• Ryuzaki Daisuke

Classifications

• B81C2201/0159

  Lithographic techniques not provided for in B81C2201/0157 · CPC title

• G03F7/2059

  using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title

• B81C2201/0143

  Focussed beam, i.e. laser, ion or e-beam · CPC title

• B81C1/00412

  Mask characterised by its behaviour during the etching process, e.g. soluble masks · CPC title

• B81C2201/0198

  for making a masking layer · CPC title