Ohmic electrode

Patent metadata

Field	Value
Publication number	US-2019058048-A1
Application number	US-201716079457-A
Country	US
Kind code	A1
Filing date	Feb 2, 2017
Priority date	Feb 24, 2016
Publication date	Feb 21, 2019
Grant date	—

Abstract

An ohmic electrode that is used in, for example, a power semiconductor device including: a SiC substrate including an ohmic contact layer formed on a SiC semiconductor layer and formed of a material selected from the group consisting of nickel and nickel silicide, a barrier layer formed on the ohmic contact layer, and an electrode layer formed on the barrier layer and formed of a copper alloy containing at least one from among zinc, nickel, titanium, manganese, and calcium.

First claim

1 - 6 . (canceled)

7 : An ohmic electrode, comprising:
an ohmic contact layer formed on a SiC semiconductor layer, the ohmic contact layer comprising a material selected from the group consisting of nickel and nickel silicide; a barrier layer formed on the ohmic contact layer; and an electrode layer formed on the barrier layer, the electrode layer comprising a copper alloy comprising at least one selected from the group consisting of zinc, nickel, titanium, manganese, and calcium, wherein the barrier layer comprises an element that forms no solid solution with copper or an element that forms a compound with copper, and wherein the barrier layer comprises a material selected from the group consisting of molybdenum, tantalum, tungsten, niobium, titanium, and a nitride thereof.

8 : The ohmic electrode according to claim 7 ,
wherein the copper alloy comprises at least one selected from the group consisting of zinc in an amount of 0.1 at % or more and 3 at % or less; nickel in an amount of 0.1 at % or more and 3 at % or less; titanium in an amount of 0.1 at % or more and 0.5 at % or less; manganese in an amount of 0.1 at % or more and 1 at % or less, and calcium in an amount of 0.1 at % or more and 1 at % or less.

9 : The ohmic electrode according to claim 7 , wherein the barrier layer has a film thickness of 10 nm or more and 100 nm or less.

10 : A SiC semiconductor device, comprising the ohmic electrode according to claim 7 .

11 : A SiC semiconductor device, comprising the ohmic electrode according to claim 8 .

12 : A SiC semiconductor device, comprising the ohmic electrode according to claim 9 .

Assignees

• Kobe Steel Ltd

Inventors

• Goto Hiroshi
• Sakamoto Hisatoshi

Classifications

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D64/252

  for vertical or pseudo-vertical devices · CPC title

• H10D64/0115

  to silicon carbide · CPC title

• H01L29/7802

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic