Method of Producing a Thin Metal-Organic Framework Film Using Vapor Phase Precursors

Patent metadata

Field	Value
Publication number	US-2019024235-A1
Application number	US-201816118875-A
Country	US
Kind code	A1
Filing date	Aug 31, 2018
Priority date	Apr 30, 2014
Publication date	Jan 24, 2019
Grant date	—

Abstract

A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound pre-cursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase.

First claim

1 . (canceled)

2 . (canceled)

3 . (canceled)

4 . (canceled)

5 . (canceled)

6 . (canceled)

7 . (canceled)

8 . (canceled)

9 . (canceled)

10 . (canceled)

11 . (canceled)

12 . (canceled)

13 . (canceled)

14 . A substrate structure comprising:
a substrate having a main surface; and a metal organic framework (MOF) film on said main surface, wherein said MOF film has a thickness range of 1 nm to 250 nm and is pin-hole free.

15 . The substrate structure according to claim 14 , wherein said main surface is covered with a conformal layer of a dielectric material.

16 . The substrate structure according to claim 14 , wherein said substrate structure further comprises a stack consisting of layers of MOF films and layers of materials having a refractive index higher than 1.4, wherein each layer of said MOF film is disposed alternating with each layer of said high refractive index materials.

17 . (canceled)

18 . The substrate structure according to claim 14 , wherein said substrate is a Si substrate.

19 . The substrate structure according to claim 14 , wherein said substrate is a bulk Si substrate.

20 . The substrate structure according to claim 15 , wherein the conformal layer of the dielectric material is deposited by Atomic Lay Deposition (ALD).

21 . The substrate structure according to claim 15 , wherein the conformal layer of dielectric material comprises an oxide layer.

22 . The substrate structure according to claim 21 , wherein the oxide layer is an electrical conductor.

23 . The substrate structure according to claim 21 , wherein the oxide layer is an electrical insulator.

24 . The substrate structure according to claim 21 , wherein the oxide layer is an ionic conductor.

25 . The substrate structure according to claim 21 , wherein the oxide layer comprises a metal oxide.

26 . The substrate structure according to claim 25 , wherein the metal oxide is selected from TiO 2 , SiO 2 and Al 2 O 3 .

27 . The substrate structure according to claim 15 , wherein a thickness of the conformal layer of the dielectric material ranges from 2 nm to 40 nm.

28 . The substrate structure according to claim 14 , wherein the main surface of the substrate further comprises a plurality of indentations.

29 . The substrate structure according to claim 14 , wherein the main surface of the substrate further comprises a plurality of protrusions.

30 . The substrate structure according to claim 29 , wherein the protrusions are made of material that is the same as the substrate.

31 . The substrate structure according to claim 29 , wherein the protrusions are made of material that is different from the substrate.

32 . The substrate structure according to claim 31 , wherein the protrusions are pillars, metal nanowires, semiconductor nanowires, carbon nanotubes or carbon nano-sheets.

33 . The substrate structure according to claim 29 , wherein the protrusions are free-standing or connected.

34 . The substrate structure according to claim 29 , wherein the protrusions have a geometrical three dimensional shape.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Stassen Ivo
• Ameloot Rob
• De Vos Dirk
• Vereecken Philippe M

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/665

  Porous materials · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title