Semiconductor device and optical coupling device

Patent metadata

Field	Value
Publication number	US-2019019784-A1
Application number	US-201816132702-A
Country	US
Kind code	A1
Filing date	Sep 17, 2018
Priority date	Sep 4, 2015
Publication date	Jan 17, 2019
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor element having a first surface, a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element, a gel-like silicone that covers an upper surface of the second semiconductor element, and a resin portion that covers the gel-like silicone and the first surface of the first semiconductor element.

First claim

1 .- 10 . (canceled)

11 . A semiconductor device, comprising:
a first semiconductor element on a surface of a substrate; a second semiconductor element having a lower surface bonded to an upper surface of the first semiconductor element; a rubber-like silicone covering an upper surface and a side surface of the second semiconductor element; and a resin portion covering an outer surface of the rubber-like silicone and the first semiconductor element, wherein a thickness of the rubber-like silicone on the upper surface of the second semiconductor element is smaller than a thickness of the rubber-like silicone on the side surface of the second semiconductor element, the thicknesses being respectively measured along a direction normal to the upper surface of the second semiconductor element and the side surface of the second semiconductor element.

12 . The semiconductor device according to claim 11 , further comprising:
a first gap between the rubber-like silicone and the resin portion on the upper surface of the second semiconductor element; and a second gap between the rubber-like silicone and the resin portion on the side surface of the second semiconductor element, wherein a spacing between the rubber-like silicone and the resin portion in the first gap is less than a maximum width spacing between the rubber-like silicone and the resin portion in the second gap.

13 . (canceled)

14 . The semiconductor device according to claim 11 , wherein the outer surface of the rubber-like silicone is modified by plasma cleaning prior to application of the resin portion thereon.

15 . The semiconductor device according to claim 11 , wherein
the first semiconductor element includes a light receiving portion, the second semiconductor element includes a light emitting portion, and the light emitting portion faces the light receiving portion.

16 .- 20 . (canceled)

21 . The semiconductor device according to claim 11 , wherein the rubber-like silicone and the resin portion on the upper surface of the second semiconductor element are in contact with each other.

22 . The semiconductor device according to claim 11 , wherein the resin portion has a durometer-measured hardness greater than a durometer measured hardness of the rubber-like silicon.

23 . A semiconductor device, comprising:
a first semiconductor element on a surface of a substrate; a second semiconductor element having a lower surface bonded to an upper surface of the first semiconductor element; a rubber-like silicone covering an upper surface and a side surface of the second semiconductor element; and a resin portion covering an outer surface of the rubber-like silicone and the first semiconductor element; a first gap between the rubber-like silicone and the resin portion on the upper surface of the second semiconductor element; and a second gap between the rubber-like silicone and the resin portion on the side surface of the second semiconductor element, wherein a spacing between the rubber-like silicone and the resin portion in the first gap is less than a maximum width spacing between the rubber-like silicone and the resin portion in the second gap.

24 . The semiconductor device according to claim 23 , wherein the outer surface of the rubber-like silicone is modified by plasma cleaning prior to application of the resin portion thereon.

25 . The semiconductor device according to claim 23 , wherein
the first semiconductor element includes a light receiving portion, the second semiconductor element includes a light emitting portion, and the light emitting portion faces the light receiving portion.

26 . The semiconductor device according to claim 23 , wherein the resin portion has a durometer-measured hardness greater than a durometer measured hardness of the rubber-like silicon.

Assignees

• Toshiba Kk

Inventors

• Takai Naoya

Classifications

• H10W72/07355

  changes in materials · CPC title

• H10W72/351

  Materials of die-attach connectors · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W70/635

  Through-vias · CPC title

• H10W40/25

  characterised by their materials · CPC title