Magnetic memory device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2018375016-A1
Application number	US-201816119553-A
Country	US
Kind code	A1
Filing date	Aug 31, 2018
Priority date	Aug 4, 2016
Publication date	Dec 27, 2018
Grant date	—

Abstract

According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

First claim

1 - 19 . (canceled)

20 : A magnetic memory device, comprising:
a metal-containing layer including a first portion, a second portion, a third portion located between the first portion and the second portion, a fourth portion located between the third portion and the second portion, and a fifth portion located between the third portion and the fourth portion; a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion; a second magnetic layer provided between the first magnetic layer and a portion of the third portion; a first intermediate layer including a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic; a third magnetic layer separated from the fourth portion in the first direction; a fourth magnetic layer provided between the third magnetic layer and a portion of the fourth portion; a second intermediate layer including a portion provided between the third magnetic layer and the fourth magnetic layer, the second intermediate layer being nonmagnetic; and a controller electrically connected with the first portion, the second portion, and the fifth portion, a length along a third direction of the third portion being longer than a length along the third direction of the second magnetic layer, the third direction crossing a plane including the first direction and the second direction, the length along the third direction of the third portion being longer than a length along the third direction of the fifth portion, the controller being configured to implement:
a first program operation of supplying a first current from the first portion toward the fifth portion, and a second current from the second portion toward the fifth portion; and
a second program operation of supplying a third current from the fifth portion toward the first portion, and a fourth current from the fifth portion toward the second portion.

21 : The device according to claim 20 , wherein
a length along the third direction of the fourth portion is longer than a length along the third direction of the fourth magnetic layer, and the length of the fourth portion is longer than the length of the fifth portion.

22 : The device according to claim 20 , wherein
the third portion includes:
a first overlap region overlapping the second magnetic layer in the first direction; and
a first non-overlap region not overlapping the second magnetic layer in the first direction, and
a thickness along the first direction of at least a portion of the first non-overlap region is thinner than a first overlap region thickness along the first direction of the first overlap region.

23 : The device according to claim 22 , wherein
the third portion further includes a second non-overlap region, the second non-overlap region does not overlap the second magnetic layer in the first direction, the first overlap region is positioned between the first non-overlap region and the second non-overlap region in the third direction, and the thickness along the first direction of at least a portion of the second non-overlap region is thinner than the first overlap region thickness.

24 : The device according to claim 20 , wherein a first ratio of a total of a length along the third direction of the first non-overlap region and a length along the third direction of the second non-overlap region to the first overlap region thickness is higher than a ratio of an absolute value of a difference between a length along the second direction of a surface of the second magnetic layer opposing the metal-containing layer and a length along the second direction of a surface of the second magnetic layer opposing the first intermediate layer to a thickness along the first direction of the second magnetic layer.

25 : The device according to claim 20 , wherein
the third portion includes a first overlap region overlapping the second magnetic layer in the first direction, and a thickness along the first direction of the fifth portion is thinner than a first overlap region thickness along the first direction of the first overlap region.

26 : The device according to claim 20 , further comprising a compound region, the compound region including a metal included in the second magnetic layer,
the compound region being provided along a direction connecting the second magnetic layer and the fourth magnetic layer between the second magnetic layer and the fourth magnetic layer.

27 : The device according to claim 20 , wherein a crystal structure of the third portion is different from a crystal structure of at least a portion of the fifth portion.

28 : A magnetic memory device, comprising:
a first metal-containing layer including a first portion, a second portion, and a first intervening portion provided between the first portion and the second portion; a second metal-containing layer including a third portion, a fourth portion, and a second intervening portion provided between the third portion and the fourth portion, the second portion being provided between the first portion and the fourth portion, the third portion being provided between the second portion and the fourth portion; and a plurality of first stacked bodies, the first stacked bodies being arranged along the first metal-containing layer, one of the first stacked bodies including a first magnetic layer, a second magnetic layer, and a first intermediate layer, the first magnetic layer being separated from the first intervening portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion, the second magnetic layer being provided between the first intervening portion and the first magnetic layer, the first intermediate layer being nonmagnetic and including a portion provided between the first magnetic layer and the second magnetic layer; a plurality of second stacked bodies, the second stacked bodies being arranged along the second metal-containing layer, one of the second stacked bodies including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer, the third magnetic layer being separated from the second intervening portion in the first direction, the fourth magnetic layer being provided between the second intervening portion and the third magnetic layer, the second intermediate layer being nonmagnetic and including a portion provided between the third magnetic layer and the fourth magnetic layer, a third stacked body including a fifth magnetic layer and being provided between the first stacked bodies and the second stacked bodies; and a controller electrically connected with the first to fourth portions, the first stacked bodies, and the second stacked bodies, the controller being configured to implement:
a first program operation of supplying a first current from the first portion toward the second portion, and a second current from the fourth portion toward the third portion; and
a second program operation of supplying a third current from the second portion toward the first portion, and a fourth portion from the third portion and the fourth portion.

29 : The device according to claim 28 , further comprising:
a third metal-containing layer provided between the second portion and the third portion; a first insulating region provided between the second portion and the third metal-containing layer, and a second insulating region provided between the third portion and the third metal-containing layer.

30 : A magnetic memory device, comprising:
a metal-containing layer

Assignees

• Toshiba Kk

Inventors

• Shimizu Mariko
• Ohsawa Yuichi
• Yoda Hiroaki
• Sugiyama Hideyuki
• Shirotori Satoshi
• BUYANDALAI Altansargai

Classifications

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11B5/70605

  metals or alloys · CPC title

• H01L27/228

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic