Apparatus for processing substrate

Patent metadata

Field	Value
Publication number	US-2018355481-A1
Application number	US-201815973241-A
Country	US
Kind code	A1
Filing date	May 7, 2018
Priority date	Jun 8, 2017
Publication date	Dec 13, 2018
Grant date	—

Abstract

The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which is capable of allowing a substrate processing gas to smoothly flow on the substrate. The apparatus for processing the substrate in accordance an exemplary embodiment may form a laminar flow through a gas supply unit disposed on one side of an inner reaction tube and an exhaust duct disposed on the other side of the inner reaction tube, which faces the gas supply unit, to extend up to the outside of an accommodation region of a pedestal in an accommodation space of the inner reaction tube and control a flow of a substrate processing gas supplied onto the substrate.

First claim

What is claimed is:

1 . An apparatus for processing a substrate, comprising:
an outer tube having an inner space; an inner reaction tube disposed to be spaced apart from an inner surface of the outer tube in the inner space of the outer tube and having an accommodation space therein; a substrate boat in which a plurality of substrates are loaded in a multistage manner and accommodated in an upper portion of the accommodation space of the inner reaction tube during substrate processing; a pedestal configured to support the substrate boat and accommodated in a lower portion of the accommodation space of the inner reaction tube during the substrate processing; a gas supply unit disposed on one side of the inner reaction tube; and an exhaust duct vertically extending from the other side of the inner reaction tube to provide an inner passage communicating with an exhaust hole defined to pass through a sidewall of the inner reaction tube and disposed in a spaced space between the inner reaction tube and the outer tube to face the gas supply unit, wherein the exhaust duct extends up to the outside of an accommodation region of the pedestal in the accommodation space of the inner reaction tube.

2 . The apparatus of claim 1 , wherein the exhaust hole comprises:
a first exhaust hole defined to correspond to an accommodation region of the substrate board in the accommodation space of the inner reaction tube; and a second exhaust hole defined to correspond to the accommodation region of the pedestal.

3 . The apparatus of claim 2 , wherein the first exhaust hole and the second exhaust hole are defined to be spaced apart from each other.

4 . The apparatus of claim 2 , further comprising an exhaust port communicating with the exhaust duct and disposed to correspond to the accommodation region of the pedestal,
wherein the second exhaust hole faces the exhaust port.

5 . The apparatus of claim 1 , wherein the exhaust hole has a slit shape extending in a circumferential direction of the inner reaction tube or a shape in which a plurality of through-holes are arranged along a circumference of the inner reaction tube.

6 . The apparatus of claim 1 , further comprising a heating unit vertically extending outside the inner reaction tube to heat the inner reaction tube and extending up to the outside of the accommodation region of the pedestal.

7 . The apparatus of claim 1 , wherein the pedestal comprises a plurality of thermal blocking plates spaced apart from each other and disposed in a multistage manner.

8 . The apparatus of claim 1 , wherein the gas supply unit comprises a plurality of gas distribution lines vertically extending to distribute a supplied substrate processing gas or inert gas,
the plurality of gas distribution lines are disposed in a line along a circumference of the inner reaction tube to form a gas distribution line array, and the inert gas is supplied to the plurality of gas distribution lines, which are symmetrical to each other with respect to a center of the gas distribution line array.

9 . The apparatus of claim 8 , wherein the substrate processing gas is supplied to the gas distribution line disposed between the plurality of gas distribution lines, which are symmetrical to each other.

10 . The apparatus of claim 8 , wherein a flow rate of the inert gas is adjusted in accordance with a distance between an inner surface of the inner reaction tube and a side portion of the substrate boat.

11 . The apparatus of claim 8 , wherein the substrate processing gas comprises a source gas for forming a thin film and a reaction gas reacting with the source gas, and
the source gas and the reaction gas are sequentially supplied.

12 . The apparatus of claim 8 , wherein the substrate processing gas comprises a source gas for forming a thin film and a reaction gas reacting with the source gas, and
the source gas and the reaction gas are separated from each other so as to be respectively supplied to the gas distribution lines different from each other.

13 . The apparatus of claim 8 , wherein the gas supply unit further comprises a plurality of injection nozzles disposed on a circumferential surface of the gas distribution line and disposed in a line in a longitudinal direction of the gas distribution line, and
an internal pressure difference of the gas distribution line in the longitudinal direction is within a predetermined range during the substrate processing.

14 . The apparatus of claim 1 , wherein a material of the exhaust duct comprises quartz, and
the exhaust duct and the inner reaction tube are provided as one body.

Assignees

• Eugene Technology Co Ltd

Inventors

• Kang Sung Ho
• Kim Chang Dol
• Lee Sang Don

Classifications

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/04 Primary

  Apparatus for manufacture or treatment · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title