Composition, laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor

Patent metadata

Field	Value
Publication number	US-2018351105-A1
Application number	US-201816103593-A
Country	US
Kind code	A1
Filing date	Aug 14, 2018
Priority date	Dec 12, 2012
Publication date	Dec 6, 2018
Grant date	—

Abstract

Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c):
(a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

First claim

What is claimed is:

1 . A transistor, comprising:
a source electrode; a drain electrode; a gate electrode provided corresponding to a channel between the source electrode and the drain electrode; a semiconductor layer provided in contact with the source electrode and the drain electrode; and an insulator layer disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, wherein the insulator layer is formed by photocationic-polymerization of a composition comprising
a first organic compound represented by Formula (1) below,
a second organic compound represented by Formula (2) below, and
a photocationic polymerization initiator

where R represents a hydrogen atom or a glycidyl group and plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group,

2 . The transistor according to claim 1 , wherein at least one of the gate electrode, the source electrode, and the drain electrode is laminated on a base film containing a silane coupling agent having a group capable of capturing a metal, which is an electroless plating catalyst.

3 . The transistor according to claim 1 , wherein the semiconductor layer is an organic semiconductor layer.

4 . The transistor according to claim 3 , wherein
the source electrode has a first electrode and a second electrode formed to cover the first electrode; the drain electrode has a third electrode and a fourth electrode formed to cover the third electrode; an energy level difference between a work function of a formation material of the second electrode and an energy level of a molecular orbital used for electron transfer in a formation material of the organic semiconductor layer is smaller than an energy level difference between a work function of a formation material of the first electrode and the energy level of the molecular orbital; and an energy level difference between a work function of a formation material of the fourth electrode and the energy level of the molecular orbital used for electron transfer in the formation material of the organic semiconductor layer is smaller than an energy level difference between the work function of a formation material of the third electrode and the energy level of the molecular orbital.

5 . The transistor according to claim 4 , wherein the first electrode and the third electrode are made of the same material.

6 . The transistor according to claim 4 , wherein the second electrode and the fourth electrode are made of the same material.

7 . The transistor according to claim 1 , which is formed on a substrate made of a non-metallic material.

8 . The transistor according to claim 7 , wherein the substrate is made of a resin material.

9 . The transistor according to claim 8 , wherein the substrate has flexibility.

10 . The transistor according to claim 1 , wherein the composition further comprises:
polyvinyl phenol.

11 . The transistor according to claim 10 , wherein
a ratio of a sum of a mass of the first organic compound and a second organic compound to a total sum of a mass of the polyvinyl phenol, the first organic compound, and the second organic compound is 50 mass % to 100 mass %, and a ratio of the mass of the second organic compound to the total sum is 10 mass % to 30 mass %.

12 . The transistor according to claim 1 , wherein the composition further comprises:
a third organic compound represented by Formula (3) below

13 . The transistor according to claim 12 , wherein the composition further comprises:
polyvinyl phenol.

Assignees

• Nikon Corp

Inventors

• Koizumi Shohei
• Sugizaki Takashi
• Miyamoto Kenji
• Kawakami Yusuke

Classifications

• H10P50/28

  of insulating materials · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• C09D163/00

  Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins · CPC title

• C08G59/3218

  Carbocyclic compounds · CPC title

• C08G59/02

  Polycondensates containing more than one epoxy group per molecule · CPC title