Solid-state imaging device and method of manufacturing solid-state imaging device

Patent metadata

Field	Value
Publication number	US-2018350881-A1
Application number	US-201615756102-A
Country	US
Kind code	A1
Filing date	Aug 3, 2016
Priority date	Sep 16, 2015
Publication date	Dec 6, 2018
Grant date	—

Abstract

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

First claim

1 . A solid-state imaging device comprising:
a first electrode; a second electrode; and a photoelectric conversion film formed between the first electrode and the second electrode, the photoelectric conversion film including an organic semiconductor and an inorganic material.

2 . The solid-state imaging device according to claim 1 , wherein
the inorganic material has a light transmittance in a visible range of 70% or more, and the organic semiconductor has a light absorption rate in the visible range of less than 30%.

3 . The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is a co-deposited film that includes the organic semiconductor and the inorganic material.

4 . The solid-state imaging device according to claim 3 , wherein ratios of respective volumes of the inorganic material and the organic semiconductor in the co-deposited film are different from each other.

5 . The solid-state imaging device according to claim 4 , wherein the ratio of the inorganic material in the co-deposited film is 70% or more or 30% or less.

6 . The solid-state imaging device according to claim 1 , wherein the inorganic material has a bandgap energy of 3 eV or more.

7 . The solid-state imaging device according to claim 1 , wherein the inorganic material comprises zinc sulfide (ZnS).

8 . The solid-state imaging device according to claim 1 , wherein the inorganic material comprises titanium oxide (TiO 2 ).

9 . The solid-state imaging device according to claim 1 , wherein the organic semiconductor and the inorganic material are alternately and repetitively laminated in the photoelectric conversion film.

10 . The solid-state imaging device according to claim 1 , wherein the organic semiconductor includes one or more of quinacridone, a quinacridone derivative, subphthalocyanine and a subphthalocyanine derivative.

11 . The solid-state imaging device according to claim 1 , further comprising:
a first element substrate including the photoelectric conversion film; and a second element substrate including a signal processing circuit that performs a signal processing on an electric signal that is photoelectrically converted in the photoelectric conversion film, the first element substrate and the second element substrate being laminated.

12 . The solid-state imaging device according to claim 1 , further comprising:
a semiconductor substrate that includes one or two or more photoelectric conversion elements, wherein the first electrode, the photoelectric conversion film, and the second electrode are formed above the semiconductor substrate.

13 . A method of manufacturing a solid-state imaging device comprising:
forming a first electrode; forming, on the first electrode, a photoelectric conversion film that includes an organic semiconductor and an inorganic material; and forming a second electrode on the photoelectric conversion film.

14 . The method of manufacturing the solid-state imaging device according to claim 13 , wherein the photoelectric conversion film is formed by co-deposition of the organic semiconductor and the inorganic material.

15 . The method of manufacturing the solid-state imaging device according to claim 14 , wherein ratios of respective volumes of the inorganic material and the organic semiconductor in the photoelectric conversion film are different from each other.

16 . The method of manufacturing the solid-state imaging device according to claim 15 , wherein the ratio of the inorganic material in the photoelectric conversion film is 70% or more or 30% or less.

17 . The method of manufacturing the solid-state imaging device according to claim 13 , wherein
the inorganic material comprises zinc sulfide (ZnS), and the forming of the photoelectric conversion film comprises performing co-deposition by using a resistive heating system for each of the organic semiconductor and the inorganic material.

18 . The method of manufacturing the solid-state imaging device according to claim 13 , wherein
the inorganic material comprises titanium oxide (TiO 2 ), and the forming of the photoelectric conversion film comprises performing co-deposition by using a resistive heating system for the organic semiconductor and by using an electron beam heating system for the inorganic material.

19 . The method of manufacturing the solid-state imaging device according to claim 13 , wherein the photoelectric conversion film is formed by alternately and repetitively depositing the organic semiconductor and the inorganic material.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Nakayama Norikazu
• Ono Hideki
• Obana Yoshiaki
• Matsuzawa Nobuyuki

Classifications

• H01L27/286

  Electricity · mapped topic

• H01L27/14647

  Electricity · mapped topic

• H01L27/307 Primary

  Electricity · mapped topic

• H10K19/20

  comprising components having an active region that includes an inorganic semiconductor · CPC title

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title