Sapphire thin film coated flexible substrate

US2018347028A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018347028-A1
Application numberUS-201816100186-A
CountryUS
Kind codeA1
Filing dateAug 9, 2018
Priority dateDec 23, 2011
Publication dateDec 6, 2018
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

First claim

Opening claim text (preview).

1 . A method for coating sapphire on to substrate comprising, at least one e-beam evaporation or sputtering process, wherein sapphire is deposited on to at least one substrate to form a sapphire coated substrate, wherein the substrate during deposition is without external cooling or heating; and at least one annealing process, wherein said sapphire coated substrate is annealed under an annealing temperature ranging from 300° C. to less than a melting point of sapphire (Al 2 O 3 ) for a time. 2 . The method according to claim 1 , wherein said at least one substrate comprises at least one material with a Mohs value less than that of said sapphire. 3 . The method according to claim 1 , wherein said at least one substrate is selected from quartz, fused silica, silicon, glass, toughen glass, PET, polymers, and/or plastics. 4 . The method according to claim 1 , wherein said sapphire is deposited as at least one thin film on said at least one substrate. 5 . The method according to claim 4 , wherein a thickness of said at least one substrate is of one or more orders of magnitude greater than a thickness of said at least one sapphire thin film. 6 . The method according to claim 4 , wherein a thickness of said at least one sapphire thin film is about 1/1000 of a thickness of said at least one substrate. 7 . The method according to claim 4 , wherein said at least one sapphire thin film has the thickness between 150 nm and 600 nm. 8 . The method according to claim 1 , wherein said time is no less than 30 minutes. 9 . The method according to claim 1 , wherein said time is no more than 2 hours. 10 . The method according to claim 1 , wherein said annealing temperature ranges between 850° C. and 1300° C. 11 . The method according to claim 1 , wherein said annealing temperature ranges between 500° C. and 2040° C. 12 . The method according to claim 1 , wherein said annealing temperature ranges between 1150° C. and 1300° C. 13 . The method according to claim 1 , wherein said at least one substrate is first coated with at least one catalyst film comprising a metal selected from a group consisting of titanium (Ti), chromium (Cr), nickel (Ni), silicon (Si), silver (Ag), gold (Au), germanium (Ge) and metal with a higher melting point than the said at least one substrate, before said sapphire is deposited. 14 . The method according to claim 13 , wherein said at least one catalyst film is not continuous. 15 . The method according to claim 13 , wherein said at least one catalyst film has a thickness ranging between 1 nm and 15 nm. 16 . The method according to claim 13 , wherein said at least one catalyst film comprising a nano-dot with a diameter ranging between 5 nm and 20 nm. 17 . A method for protecting a surface of a substrate by coating said surface with sapphire comprising using the method according to claim 1 . 18 . The method according to claim 17 , wherein said surface allows light to pass through. 19 . A screen for use in display interfaces being fabricated by the method according to claim 1 . 20 . The screen according to claim 19 , wherein said screen is scratch resistant, shatter resistant, light in weight and/or allows light to pass through.

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What does patent US2018347028A1 cover?
A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.
Who is the assignee on this patent?
Univ Hong Kong Baptist Univ
What technology area does this patent fall under?
Primary CPC classification C23C14/081. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Dec 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).