Conductive adhesive layer for semiconductor devices and packages

Patent metadata

Field	Value
Publication number	US-2018342463-A1
Application number	US-201816035048-A
Country	US
Kind code	A1
Filing date	Jul 13, 2018
Priority date	Dec 30, 2016
Publication date	Nov 29, 2018
Grant date	—

Abstract

In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.

First claim

The claimed invention is:

1 . A semiconductor package, comprising:
a substrate having two or more electronic components and one or more grounding pads proximate to the two or more electronic components; a conductive adhesive layer disposed on at least a portion of the one or more grounding pads, the conductive adhesive layer applied between the two or more electronic components; and a shielding structure disposed over at least a portion of the two or more electronic component, the shielding structure being in contact with at least one of the one or more grounding pads or the conductive adhesive layer.

2 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises sintering nanoparticles, non-sintering pastes, non-sintering inks, intermetallic compound forming material, or conductive particles.

3 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises an intermetallic compound-forming material, wherein the intermetallic compound-forming material comprises a SnBiCu paste.

4 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises sintering nanoparticles, wherein the sintering nanoparticles comprise silver or copper.

5 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises non-sintering pastes or non-sintering inks, wherein the non-sintering pastes or the non-sintering inks comprise a metal.

6 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises non-sintering pastes or non-sintering inks, wherein the non-sintering pastes or non-sintering inks comprise an epoxy acrylic adhesive system or a polymer system.

7 . The semiconductor package of claim 1 , wherein the conductive adhesive layer comprises conductive particles, wherein the conductive particles include fibers, flakes, nanoparticles, or graphite.

8 . The semiconductor package of claim 1 , wherein the one or more electronic components comprise an avalanche photodiode or a laser diode.

9 . The semiconductor package of claim 4 , further comprising an optoelectronic package, wherein the shielding structure covers at least a portion of the optoelectronic package.

10 . A device, comprising:
a processor; a memory device in communication with the processor, the memory device comprising: a substrate having two or more electronic components and one or more grounding pads proximate to the two or more electronic components; a conductive adhesive layer disposed on at least a portion of the one or more grounding pads, the conductive adhesive layer applied between the two or more electronic components; and a shielding structure disposed over at least a portion of the two or more electronic component, the shielding structure being in contact with at least one of the one or more grounding pads or the conductive adhesive layer.

11 . The device of claim 10 , wherein the conductive adhesive layer comprises sintering nanoparticles, non-sintering pastes, non-sintering inks, intermetallic compound forming material, or conductive particles.

12 . The device of claim 10 , further comprising an optoelectronic package, wherein the shielding structure covers at least a portion of the optoelectronic package.

Assignees

• Intel Corp

Inventors

• Gaines Taylor
• Prakash Anna M
• Ramalingam Suriyakala
• Liu Boxi
• Gupta Mohit
• Belman Ziv
• Schiffmann Baruch
• Hirshberg Arnon
• Malamud Vladimir
• Wittenberg Ron

Classifications

• H10W42/20

  protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons · CPC title

• H10W74/127 Primary

  characterised by arrangements for sealing or adhesion · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07355

  changes in materials · CPC title