Light emitting device and imaging apparatus

US2018342207A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2018342207-A1
Application numberUS-201815970354-A
CountryUS
Kind codeA1
Filing dateMay 3, 2018
Priority dateMay 29, 2017
Publication dateNov 29, 2018
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A light emitting device includes a light emitting element, a driving transistor configured to control driving of the light emitting element, a threshold correction unit configured to perform compensation for a voltage corresponding to a threshold of the driving transistor, and an electric potential setting unit configured to set an electric potential of a node between the driving transistor and the light emitting element, wherein the electric potential setting unit sets a first electric potential and a second electric potential different from the first electric potential, at the node.

First claim

Opening claim text (preview).

What is claimed is: 1 . A light emitting device comprising: a light emitting element; a first transistor in which one of a source and a drain is connected to the light emitting element; a second transistor connected to a node between the first transistor and the light emitting element; a third transistor connected between a gate of the first transistor and a signal line; and a fourth transistor connected between another of the source and the drain of the first transistor and a power supply line, wherein the node is connected to a terminal via the second transistor, the terminal being configured to have at least a first electric potential and a second electric potential different from the first electric potential. 2 . The light emitting device according to claim 1 , further comprising a capacitor connected between the gate of the first transistor and a connecting portion between the third transistor and the first transistor. 3 . The light emitting device according to claim 1 , further comprising a potential control circuit configured to control whether the electric potential of the terminal is to be the first electric potential or the second electric potential. 4 . The light emitting device according to claim 3 , wherein the second electric potential is an electric potential between the first electric potential and an electric potential of the power supply line, wherein the potential control circuit controls the electric potential of the terminal to be the first electric potential, in a period in which a voltage between the gate of the first transistor and the one of the source and the drain of the first transistor is a threshold voltage of the first transistor, and wherein the potential control circuit controls the electric potential of the terminal to be the second electric potential, before the light emitting element emits light, after the first electric potential is supplied. 5 . The light emitting device according to claim 1 , wherein the second electric potential is an electric potential between the first electric potential and an electric potential of the power supply line, wherein the electric potential of the terminal is the first electric potential, in a first period in which the second transistor and the third transistor are each in an ON state, and the fourth transistor is in an OFF state, and wherein the electric potential of the terminal is the second electric potential, when the second transistor is switched to an OFF state, before the fourth transistor is switched to an ON state, after the first period. 6 . The light emitting device according to claim 5 , wherein the electric potential of the terminal is the first electric potential, when the fourth transistor is switched to the OFF state, in a second period in which the second transistor and the third transistor are each in the ON state. 7 . The light emitting device according to claim 5 , wherein a period in which the third transistor is in the ON state and a period in which the electric potential of the terminal is the second electric potential overlap, before the fourth transistor is switched to the ON state, after the first period. 8 . The light emitting device according to claim 1 , wherein the light emitting element has a first electrode, a second electrode, and a light emission layer disposed between the first electrode and the second electrode, wherein the second transistor is connected to the first electrode of the light emitting element, and wherein the second electric potential is an electric potential at which a voltage between the first electrode and the second electrode of the light emitting element is smaller than a threshold voltage of the light emitting element. 9 . The light emitting device according to claim 1 , wherein the first transistor is a P-type transistor. 10 . The light emitting device according to claim 1 , wherein each of the second transistor, the third transistor, and the fourth transistor is a P-type transistor. 11 . The light emitting device according to claim 1 , wherein the one of the source and the drain of the first transistor is connected to a positive electrode of the light emitting element, and the second electric potential is higher than the first electric potential. 12 . The light emitting device according to claim 1 , wherein the fourth transistor is switched to an ON state, in a period in which the second transistor is in an ON state, and the third transistor is in an OFF state, wherein the third transistor is switched to an ON state, in a state where a third electric potential is supplied to the signal line, after the fourth transistor is switched to the ON state, wherein the fourth transistor is switched to an OFF state, while the second transistor remains in the ON state, after the third transistor is switched to the ON state, wherein the third transistor is switched to the OFF state, after the fourth transistor is switched to the OFF state, wherein the electric potential of the signal line is changed to a fourth electric potential that is lower than the third electric potential and corresponds to a luminance of the light emitting element, after the third transistor is switched to the OFF state, wherein the third transistor is switched to the ON state and the electric potential of the terminal is changed from the first electric potential to the second electric potential, while the second transistor remains in the ON state and the fourth transistor remains in the OFF state, after the electric potential of the signal line is changed to the fourth electric potential, wherein the second transistor is switched to an OFF state and the third transistor is switched to the OFF state, after the third transistor is switched to the ON state, and wherein the fourth transistor is switched to the ON state, after the second transistor and the third transistor are each switched to the OFF state. 13 . The light emitting device according to claim 12 , wherein the electric potential of the terminal is switched from the second electric potential to the first electric potential, when the second transistor and the third transistor are each switched to the OFF state, after the third transistor is switched to the ON state. 14 . The light emitting device according to claim 2 , wherein the capacitor has a first conductive layer connected to the gate of the first transistor, a second conductive layer connected to a connecting portion between the first transistor and the fourth transistor, and an insulation layer disposed between the first conductive layer and the second conductive layer. 15 . A light emitting device comprising: a light emitting element; a driving transistor configured to control driving of the light emitting element; a threshold correction unit configured to perform compensation for a voltage corresponding to a threshold of the driving transistor; and an electric potential setting unit configured to set an electric potential of a node between the driving transistor and the light emitting element, wherein the electric potential setting unit sets a first electric potential and a second electric potential different from the first electric potential, at the node. 16 . The light emitting device according to claim 15 , wherein the electric potential setting unit sets the first electric potential as the electric potential of the node, when performing the compensation for the voltage corresponding to the threshold, and wherein the electric potential setting unit sets the second electric potential as the electric potential of the node, be

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • Details of driving circuits · CPC title

  • G09G3/3258Primary

    with pixel circuitry controlling the voltage across the light-emitting element · CPC title

  • G09G3/3233Primary

    with pixel circuitry controlling the current through the light-emitting element · CPC title

  • Electricity · mapped topic

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2018342207A1 cover?
A light emitting device includes a light emitting element, a driving transistor configured to control driving of the light emitting element, a threshold correction unit configured to perform compensation for a voltage corresponding to a threshold of the driving transistor, and an electric potential setting unit configured to set an electric potential of a node between the driving transistor and…
Who is the assignee on this patent?
Canon Kk
What technology area does this patent fall under?
Primary CPC classification G09G3/3258. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Nov 29 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 11 related publications on this page (citations in our corpus or others sharing the same primary CPC).