Acoustic wave device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2018337651-A1
Application number	US-201715791523-A
Country	US
Kind code	A1
Filing date	Oct 24, 2017
Priority date	May 22, 2017
Publication date	Nov 22, 2018
Grant date	—

Abstract

An acoustic wave device includes an acoustic wave generator formed on one surface of a substrate; a support member formed on the one surface of the substrate spaced apart from the acoustic wave generator; a protective member coupled to the support member and disposed to be spaced apart from the acoustic wave generator; and a sealing part encapsulating the protective member and the support member, wherein the sealing part includes one, or a plurality of, first hermetic layer(s) and one, or a plurality of, second hermetic layer(s), and the first hermetic layer(s) and the second hermetic layer(s) are alternately stacked.

First claim

What is claimed is:

1 . An acoustic wave device comprising:
an acoustic wave generator disposed on a substrate; a support member disposed on the substrate spaced apart from the acoustic wave generator; a protective member coupled to the support member and disposed spaced apart from the acoustic wave generator; and a sealing part encapsulating the protective member and the support member, wherein the sealing part includes one, or a plurality of, first hermetic layer(s) and one, or a plurality of, second hermetic layer(s), and the first hermetic layer(s) and the second hermetic layer(s) are alternately stacked.

2 . The acoustic wave device of claim 1 , wherein the first hermetic layer and the second hermetic layer each have a thickness of about 4 nm to about 46 nm.

3 . The acoustic wave device of claim 1 , wherein the first hermetic layer and the second hermetic layer each comprise inorganic films of different materials.

4 . The acoustic wave device of claim 3 , wherein the first hermetic layer comprises Al 2 O 3 , and
the second hermetic layer comprises ZrO 2 .

5 . The acoustic wave device of claim 1 , wherein the first hermetic layer and the second hermetic layer have approximately the same thickness.

6 . The acoustic wave device of claim 1 , wherein the sealing part has a thickness of about 30 nm to about 50 nm.

7 . The acoustic wave device of claim 1 , wherein the sealing part is disposed along a surface formed by the protective member, the support member, and the substrate.

8 . The acoustic wave device of claim 1 , further comprising a protective layer disposed on a surface of the sealing part.

9 . The acoustic wave device of claim 8 , wherein the protective layer comprises an organic film.

10 . The acoustic wave device of claim 1 , further comprising a metal member disposed on a lower surface of the protective member.

11 . The acoustic wave device of claim 1 , wherein the acoustic wave generator includes a piezoelectric thin film resonator in which a lower electrode, a piezoelectric layer, and an upper electrode are sequentially stacked.

12 . A method of manufacturing an acoustic wave device, the method comprising:
providing a substrate; forming an acoustic wave generator on one surface of the substrate; forming a support member on the one surface of the substrate generally along the circumference of the acoustic wave generator; disposing a protective member on the support member spaced apart from the acoustic wave generator; and forming a sealing part to substantially encapsulate the protective member and the support member, wherein the sealing part is formed by alternately stacking one, or a plurality of, first hermetic layer(s) and one, or a plurality of, second hermetic layer(s).

13 . The method of claim 12 , wherein the first hermetic layer and the second hermetic layer are formed by a method including atomic layer deposition (ALD).

14 . The method of claim 12 , further comprising, after forming the sealing part, forming an organic film on a surface of the sealing part.

15 . The method of claim 12 , wherein disposing the protective member further includes disposing a metal member on a lower surface of the protective member.

16 . The method of claim 12 , wherein in forming the sealing part, the sealing part is formed on substantially an entirety of a surface formed by the protective member, the support member, and the one surface of the substrate.

Assignees

• Samsung Electro Mech

Inventors

• Lee Yeong Gyu
• Yang Jeong Suong
• Baek Hyung Goo

Classifications

• H03H9/1014

  the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device · CPC title

• H03H9/64

  using surface acoustic waves · CPC title

• H03H3/08 Primary

  for the manufacture of resonators or networks using surface acoustic waves · CPC title

• H03H9/54 Primary

  comprising resonators of piezoelectric or electrostrictive material (comprising resonators using surface acoustic waves H03H9/64) · CPC title

• H03H3/02

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title