Thin film transistor, manufacturing method thereof, and method for manufacturing array substrate

Patent metadata

Field	Value
Publication number	US-2018315619-A1
Application number	US-201715843796-A
Country	US
Kind code	A1
Filing date	Dec 15, 2017
Priority date	Apr 28, 2017
Publication date	Nov 1, 2018
Grant date	—

Abstract

A thin film transistor, a manufacturing method thereof, and a method for manufacturing an array substrate are provided. The method for manufacturing the thin film transistor includes: forming an active layer film on a base; and forming a source electrode and a drain electrode of the thin film transistor using a conductive photoresist.

First claim

1 . A method for manufacturing a thin film transistor, comprising:
forming an active layer film on a base; and forming a source electrode and a drain electrode of the thin film transistor using conductive photoresist, to enable that the source electrode and the drain electrode are made of the conductive photoresist.

2 . The method according to claim 1 , wherein subsequent to the step of forming the active layer film and prior to the step of forming the source electrode and the drain electrode, the method further comprises:
forming a pattern of an active layer on the base through a patterning process.

3 . The method according to claim 2 , wherein the step of forming the source electrode and the drain electrode of the thin film transistor using the conductive photoresist comprises:
applying a conductive photoresist film onto the base on which the pattern of the active layer has been formed; pre-curing the conductive photoresist film; exposing and developing the conductive photoresist film, to form a pattern comprising the source electrode and the drain electrode; and post-curing the source electrode and the drain electrode.

4 . The method according to claim 1 , wherein the step of forming the source electrode and the drain electrode of the thin film transistor using the conductive photoresist comprises:
applying a conductive photoresist film onto the base on which the active layer film has been formed; pre-curing the conductive photoresist film; subjecting the conductive photoresist film to a patterning process, to remove a portion of the conductive photoresist film at a region other than a region corresponding to a pattern of the active layer, partially reserve a portion of the conductive photoresist film at a region corresponding to a channel in the active layer, and reserve a portion of the conductive photoresist film at a region corresponding to the pattern of the source electrode and the drain electrode; forming the pattern of the active layer through a wet-etching process; and removing the portion of the conductive photoresist film at the region corresponding to the channel in the active layer, and thinning the portion of the conductive photoresist film at the region corresponding to the pattern of the source electrode and the drain electrode through a dry-etching process, to form the pattern of the source electrode and the drain electrode.

5 . The method according to claim 3 , wherein the step of applying the conductive photoresist film comprises:
applying the conductive photoresist film onto the base in a slit-coating manner or a spin-coating manner, to form the conductive photoresist film with a thickness of 0.2 μm to 2.0 μm on the base.

6 . The method according to claim 3 , wherein
the conductive photoresist film is pre-cured at a temperature of 100° C. to 110° C. for 50 seconds to 80 seconds.

7 . The method according to claim 3 , wherein
the conductive photoresist is transparent conductive photoresist, and the conductive photoresist film is transparent conductive photoresist film.

8 . The method according to claim 3 , wherein
the source electrode and the drain electrode are post-cured at a temperature of 110° C. to 120° C. for 50 seconds to 80 seconds.

9 . The method according to claim 8 , wherein
the source electrode and the drain electrode are post-cured at a temperature of 120° C. for 60 seconds.

10 . The method according to claim 1 , wherein the conductive photoresist comprises:
a conductive medium, a film-forming resin, a photosensitizer, a solvent and a supplement.

11 . The method according to claim 10 , wherein
the conductive medium is made of metal conductive particles or alloy conductive particles having resistivity smaller than 10*10 −8 Ω·m, or graphene; the film-forming resin is thermoplastic resin; and the photosensitizer is made of an aromatic ketone derivative or a benzoin ether derivative.

12 . The method according to claim 1 , wherein
the active layer is made of a polycrystalline metal oxide semiconductor material or an amorphous metal oxide semiconductor material.

13 . The method according to claim 2 , wherein subsequent to or prior to the steps of forming the active layer, the source electrode and the drain electrode, the method further comprises:
forming a gate electrode and a gate insulation layer of the thin film transistor sequentially on the base.

14 . A method for manufacturing an array substrate, comprising:
forming a thin film transistor on a base, wherein the step of forming the thin film transistor on the base comprises: forming an active layer film on the base; and forming a source electrode and a drain electrode of the thin film transistor using conductive photoresist, to enable that the source electrode and the drain electrode are made of the conductive photoresist.

15 . The method according to claim 14 , further comprising:
forming a data line using the conductive photoresist, the data line being formed together with a source electrode and a drain electrode of the thin film transistor through a single patterning process; and forming, through patterning processes, a pixel electrode, a passivation layer and a common electrode sequentially on the base on which the thin film transistor has been formed.

16 . The method according to claim 14 , wherein
the conductive photoresist is transparent conductive photoresist.

17 . A thin film transistor, comprising:
an active layer; a source electrode; and a drain electrode, wherein the source electrode and the drain electrode are arranged above the active layer and made of a conductive photoresist.

18 . The thin film transistor according to claim 17 , further comprising:
a gate electrode; and a gate insulation layer, wherein the gate electrode is arranged between a base and the active layer, and the gate insulation layer is arranged between the gate electrode and the active layer; or the gate insulation layer and the gate electrode are sequentially arranged above the source electrode and the drain electrode.

19 . The thin film transistor according to claim 17 , wherein
the source electrode and the drain electrode are arranged at an identical layer and at two sides of the active layer respectively.

20 . The thin film transistor according to claim 17 , wherein the conductive photoresist is transparent conductive photoresist.

Assignees

• Boe Technology Group Co Ltd
• Hefei Boe Optoelectronics Tech

Inventors

• Xu Dezhi
• Duan Xianxue
• Gong Kui

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/69 Primary

  using masks for semiconductor materials · CPC title

• H01L21/3086

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L21/467 Primary

  Electricity · mapped topic