Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2018308943-A1
Application number	US-201715694836-A
Country	US
Kind code	A1
Filing date	Sep 3, 2017
Priority date	Apr 21, 2017
Publication date	Oct 25, 2018
Grant date	—

Abstract

A semiconductor device includes a first electrode, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, a second electrode in electrical contact with the third semiconductor layer, a gate electrode, a first insulating film between the side surface of the third semiconductor layer and the gate electrode, a field plate electrode, and a second insulating film. The field plate has an upper portion adjacent to the gate electrode and a lower portion having a width less than a width of the upper portion. The second insulating film has a first portion between the field plate electrode's upper portion and the first semiconductor layer and a second portion between the field plate electrode's lower portion and the first semiconductor layer, the second portion having a width greater than the width of the first portion.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a first electrode; a first semiconductor layer of a first conductivity type on the first electrode; a second semiconductor layer of a second conductivity type on the first semiconductor layer; a third semiconductor layer of the first conductivity type on the second semiconductor layer; a second electrode in electrical contact with the third semiconductor layer; a gate electrode; a first insulating film between the side surface of the third semiconductor layer and the gate electrode; a field plate electrode below the gate electrode and including an upper portion adjacent to the gate electrode and a lower portion closer to the first electrode than the upper portion, the lower portion having a width less than a width of the upper portion; and a second insulating film between the first semiconductor layer and the field plate electrode and including a first portion between the upper portion of the field plate electrode and the first semiconductor layer and a second portion between the lower portion of the field plate electrode and the first semiconductor layer, the second portion having a width greater than the width of the first portion, wherein the first semiconductor layer includes
a first region, and
a second region adjacent to a side wall of the second insulating film between the first region and the side wall of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

2 . The semiconductor device according to claim 1 , wherein the side wall of the second insulating film has stair-shaped steps in the direction between the first electrode and the second electrode.

3 . The semiconductor device according to claim 2 , wherein the first conductivity type impurity concentration in the second region of the first semiconductor layer adjacent to the first portion of the second insulating film is lower than the first conductivity type impurity concentration in the second region adjacent to the second portion of the second insulating film.

4 . The semiconductor device according to claim 3 , wherein the first semiconductor layer further includes a third region adjacent to the bottom of the second insulating film, and having a first conductivity type impurity concentration higher than that of the first region.

5 . The semiconductor device according to claim 2 , wherein the first semiconductor layer further includes a third region located adjacent to the bottom of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

6 . The semiconductor device according to claim 1 , wherein a first conductivity type impurity concentration of a region adjacent to the first portion of the second insulating film in the second region of the first semiconductor layer is lower than a first conductivity type impurity concentration of a region adjacent to the second portion of the second insulating film in the second region of the first semiconductor layer.

7 . The semiconductor device according to claim 1 , wherein the first semiconductor layer further includes a third region adjacent to the bottom of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

8 . A semiconductor device comprising:
a first electrode; a first semiconductor layer of a first conductivity type on the first electrode; a second semiconductor layer of a second conductivity type on the first semiconductor layer; a third semiconductor layer of the first conductivity type on the second semiconductor layer; a second electrode in electrical contact with the third semiconductor layer; a gate electrode between side surfaces of the third semiconductor layer; a first insulating film between the side surface of the third semiconductor layer and the gate electrode; and a field plate electrode below the gate electrode and within a second insulating film disposed in the first semiconductor layer, the field plate electrode including an upper portion and a lower portion, the upper portion closer to the gate electrode than the lower portion, the lower portion closer to the first electrode than the upper portion and having a width less than a width of the upper portion, and the second insulating film including a first portion between the upper portion of the field plate electrode and the first semiconductor layer and a second portion between the lower portion of the field plate electrode and the first semiconductor layer, the second portion having a thickness greater than a thickness of the first portion, wherein the first semiconductor layer includes
a first region, and
a second region adjacent to a side wall of the second insulating film between the first region and the side wall of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

9 . The semiconductor device according to claim 8 , wherein the side wall of the second insulating film has stair-shaped steps along a direction connecting the first electrode and the second electrode.

10 . The semiconductor device according to claim 9 , wherein a first conductivity type impurity concentration of the portion of the second region of the first semiconductor layer adjacent to the first portion of the second insulating film is lower than a first conductivity type impurity concentration of the portion of the second region of the first semiconductor layer adjacent to the second portion of the second insulating film.

11 . The semiconductor device according to claim 10 , wherein the first semiconductor layer further includes a third region adjacent to the bottom of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

12 . The semiconductor device according to claim 9 , wherein the first semiconductor layer further includes a third region adjacent to the bottom of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

13 . The semiconductor device according to claim 8 , wherein a first conductivity type impurity concentration of a region adjacent to the first portion of the second insulating film in the second region of the first semiconductor layer is lower than a first conductivity type impurity concentration of a region adjacent to the second portion of the second insulating film in the second region of the first semiconductor layer.

14 . The semiconductor device according to claim 8 , wherein the first semiconductor layer further includes a third region provided in a region adjacent to a bottom of the second insulating film and having a first conductivity type impurity concentration higher than that of the first region.

15 . A method for manufacturing a semiconductor device, the method comprising:
forming a trench in a semiconductor layer such that the trench becomes smaller in width in a depth direction and has a side wall having steps; implanting an impurity into a region adjacent to the side wall of the trench in the semiconductor layer such that the region of the semiconductor layer has a concentration gradient having an impurity concentration that is different in a depth direction; thermally oxidizing the implanted region of the semiconductor layer to form an insulating film having a film thickness that increases in width direction in the depth direction on the side wall of the trench; and forming a first electrode materi

Assignees

• Toshiba Kk

Inventors

• Nishiguchi Toshifumi

Classifications

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H01L29/66734

  Electricity · mapped topic

• H01L29/7813

  Electricity · mapped topic

• H01L21/28008

  Electricity · mapped topic

• H01L29/42368

  Electricity · mapped topic