Image sensor and image-capturing device

Patent metadata

Field	Value
Publication number	US-2018308889-A1
Application number	US-201615765202-A
Country	US
Kind code	A1
Filing date	Sep 26, 2016
Priority date	Sep 30, 2015
Publication date	Oct 25, 2018
Grant date	—

Abstract

An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.

First claim

1 . An image sensor, comprising:
a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.

2 . The image sensor according to claim 1 , wherein:
the transfer unit is provided between the photoelectric conversion unit and the accumulation unit with respect to the direction of the optical axis of the microlens.

3 . An image sensor, comprising: a first surface and a second surface that intersect an optical axis of a microlens; a photoelectric conversion unit that photoelectrically converts incident light transmitted through the microlens between the first surface and the second surface to generate an electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
with respect to a direction of the optical axis of the microlens, the photoelectric conversion unit is arranged on the first surface side, the accumulation unit is arranged on the second surface side, and the transfer unit is arranged between the photoelectric conversion unit and the accumulation unit.

4 . The image sensor according to claim 3 , wherein:
the first surface is an incident surface on which light enters.

5 . The image sensor according to claim 1 , wherein:
the transfer unit is a transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit.

6 . The image sensor according to claim 1 , comprising:
an electrode that is provided around the accumulation unit and forms a transfer path for transferring the electric charge generated by the photoelectric conversion unit to the accumulation unit.

7 . The image sensor according to claim 6 , wherein:
the electrode is provided to at least partly surround the transfer path.

8 . The image sensor according to claim 1 , further comprising:
a light shielding unit that blocks light transmitted through the microlens and enters the accumulation unit, wherein: the photoelectric conversion unit receives the incident light transmitted through the microlens, between the microlens and the light shielding unit.

9 . The image sensor according to claim 8 , wherein:
the photoelectric conversion unit has a light receiving surface that receives light entered from a direction that intersects an optical axis of the microlens, between the microlens and the light shielding unit.

10 . The image sensor according to claim 8 wherein:
the photoelectric conversion unit has a plurality of light receiving surfaces that receive incident light transmitted through the microlens, between the microlens and the light shielding unit.

11 . The image sensor according to claim 8 , wherein:
at least a part of the photoelectric conversion unit protrudes to the light incident side in comparison with the light shielding unit.

12 . The image sensor according to claim 11 , wherein:
the light shielding unit has an opening; and at least a part of the light receiving unit protrudes from the opening beyond the light shielding unit to the light incident side.

13 . An image-capturing device, comprising:
an image sensor according to claim 1 ; and a generation unit that generates image data based on a signal outputted from the image sensor.

Assignees

• Nikon Corp

Inventors

• Takagi Toru
• Nakayama Satoshi
• Ando Ryoji
• Seo Takashi
• Matsuoka Yohei
• Watanabe Yoshiyuki

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/14603

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic

• H04N5/374

  Electricity · mapped topic