Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates with etch back process
US-2024072145-A1 · Feb 29, 2024 · US
US2018301530A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018301530-A1 |
| Application number | US-201815882823-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 29, 2018 |
| Priority date | May 16, 2011 |
| Publication date | Oct 18, 2018 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.
Opening claim text (preview).
1 - 20 . (canceled) 21 . A colloidal material comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface, and the inorganic capping agent comprises H n MO y , where n=0, 1, or 2, y=2, 3, or 4, M is a metal, metalloid or phosphorus and H n MO y is negatively charged. 22 . The colloidal material of claim 21 , wherein M is P, As, W, V, or Mo. 23 . The colloidal material of claim 21 , wherein the inorganic capping agent comprises VO 4 3− , MoO 4 2− , WO 4 2− , PO 4 3− , AsO 4 3− , HPO 3 2− , H 2 PO 2 , or a mixture thereof. 24 . A colloidal material comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface and the inorganic capping agent comprises H 3 [PMo 12 O 40 ]; H 3 [PW 12 O 40 ]; Na 3 PMo 12 O 40 ; Na 6 H 2 W 12 O 40 ; H 4 [SiW 12 O 40 ]; (NH 4 ) 6 [H 2 W 12 O 40 ]; K 6 [P 2 W 18 O 62 ]; K 6 [P 2 Mo 18 O 62 ]; Mo 154 ; Rb 8 K 2 [{Ru 4 O 4 (OH) 2 ; (H 2 O) 4 }(γ-SiW 10 O 36 ) 2 ], or a mixture or derivative thereof. 25 . The colloidal material of claim 21 , wherein the colloidal material is a super-lattice. 26 . The colloidal material of claim 21 made by a method comprising admixing an inorganic capping agent in a first solvent and a nanoparticle in a second solvent together to form the colloidal material, wherein the second solvent is appreciably immiscible in the first solvent. 27 . A method of making the colloidal material of claim 21 , comprising (a) admixing the nanoparticle in a first solvent and the inorganic capping agent in a second solvent in the presence of a quaternary ammonium salt to form the colloidal material; and (b) isolating the colloidal material from the admixture, wherein the first solvent is nonpolar and the second solvent is polar. 28 .- 36 . (canceled) 37 . A matrix comprising a plurality of colloidal particles, each comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface, wherein the inorganic capping agent comprises H n MO y , where n=0, 1, or 2, y=2, 3, or 4, M is a metal, metalloid or phosphorus and H n MO y is negatively charged, and wherein pairs of colloidal particles are bridged by a cationic ion cross-linkages bound to the respective colloidal particles of the pair. 38 .- 48 . (canceled) 49 . A field effect transistor comprising: a source region and a drain region and the matrix of claim 37 extending between, and electrically coupled to, the source region and the drain region to provide current flow between the source region and the drain region, in response to activation of the field effect transistor by a gate coupled to the matrix and having a threshold gate voltage. 50 . (canceled) 51 . (canceled) 52 . The colloidal material of claim 24 , wherein the colloidal material is a super-lattice. 53 . The colloidal material of claim 24 made by a method comprising admixing an inorganic capping agent in a first solvent and a nanoparticle in a second solvent together to form the colloidal material, wherein the second solvent is appreciably immiscible in the first solvent. 54 . A method of making the colloidal material of claim 24 , comprising (a) admixing the nanoparticle in a first solvent and the inorganic capping agent in a second solvent in the presence of a quaternary ammonium salt to form the colloidal material; and (b) isolating the colloidal material from the admixture, wherein the first solvent is nonpolar and the second solvent is polar. 55 . A matrix comprising a plurality of colloidal particles, each comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface, wherein the inorganic capping agent comprises H 3 [PMo 12 O 40 ]; H 3 [PW 12 O 40 ]; Na 3 PMo 12 O 40 ; Na 6 H 2 W 12 O 40 ; H 4 [SiW 12 O 40 ]; (NH 4 ) 6 [H 2 W 12 O 40 ]; K 6 [P 2 W 18 O 62 ]; K 6 [P 2 Mo 18 O 62 ]; Mo 154 ; Rb 8 K 2 [{Ru 4 O 4 (OH) 2 ; (H 2 O) 4 }(γ-SiW 10 O 36 ) 2 ], or a mixture or derivative thereof, and wherein pairs of colloidal particles are bridged by a cationic ion cross-linkages bound to the respective colloidal particles of the pair. 56 . A field effect transistor comprising: a source region and a drain region and the matrix of claim 55 extending between, and electrically coupled to, the source region and the drain region to provide current flow between the source region and the drain region, in response to activation of the field effect transistor by a gate coupled to the matrix and having a threshold gate voltage.
Field effect transistors, FETS, with nanowire- or nanotube-channel region · CPC title
Liquid phase deposition · CPC title
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title
Additives, e.g. in view of promoting stabilisation or peptisation · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.