Solid-state imaging device, manufacturing method thereof, and electronic device

Patent metadata

Field	Value
Publication number	US-2018301491-A1
Application number	US-201615767950-A
Country	US
Kind code	A1
Filing date	Oct 12, 2016
Priority date	Oct 26, 2015
Publication date	Oct 18, 2018
Grant date	—

Abstract

The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

First claim

1 . A solid-state imaging device comprising a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels,
wherein the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film.

2 . The solid-state imaging device according to claim 1 , wherein the light shielding film includes a metal film.

3 . The solid-state imaging device according to claim 1 , wherein the low refractive index film includes a laminated layer including a first low refractive index film and a second low refractive index film, and
a refractive index increases in a following order: the second low refractive index film, the first low refractive index film which is below the second low refractive index film, and the light shielding film which is the lowermost layer.

4 . The solid-state imaging device according to claim 3 , wherein the first low refractive index film and the second low refractive index film include an inorganic film or an organic film.

5 . The solid-state imaging device according to claim 1 , wherein the first wall is formed to have a same height as an adjacent color filter.

6 . The solid-state imaging device according to claim 1 , wherein the first wall is covered with a protective film to prevent corrosion.

7 . The solid-state imaging device according to claim 1 , further comprising a second wall provided at an upper side of the first wall to isolate the pixels.

8 . The solid-state imaging device according to claim 7 , wherein the second wall is provided between the on-chip lens of the pixels.

9 . The solid-state imaging device according to claim 7 , wherein a cross sectional shape of the second wall is a reverse trapezoidal shape having a thinner bottom width than a top width.

10 . The solid-state imaging device according to claim 7 , wherein the second wall includes an inorganic film or an organic film.

11 . The solid-state imaging device according to claim 7 , wherein a refractive index of the second wall is lower than a refractive index of an adjacent layer.

12 . The solid-state imaging device according to claim 7 , wherein the second wall is formed using a same material as the on-chip lens.

13 . The solid-state imaging device according to claim 1 , wherein a refractive index of the on-chip lens is in a range of 1.60 to 2.00.

14 . The solid-state imaging device according to claim 1 , wherein in each pixel, a color filter, a high refractive index layer, and an on-chip lens are layered in this order on an upper side of a photoelectric conversion unit formed on a semiconductor substrate, and
the color filter, the high refractive index layer, and the on-chip lens are formed to have refractive indexes that increase from the semiconductor substrate to the on-chip lens.

15 . A manufacturing method of a solid-state imaging device, wherein a first wall is formed between a pixel and a pixel arranged two-dimensionally to isolate the pixels, and
the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film.

16 . An electronic device comprising a solid-state imaging device including a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels,
wherein the first wall includes at least two layers including alight shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Nakamoto Yuka
• Sayama Yukihiro
• Ohba Nobuyuki
• Nakajiki Sintaro

Classifications

• H01L27/14621

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic

• H01L27/14623 Primary

  Electricity · mapped topic

• H01L27/1463

  Electricity · mapped topic