Semiconductor light emitting device
US-2015263242-A1 · Sep 17, 2015 · US
US2018294388A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018294388-A1 |
| Application number | US-201816004445-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 11, 2018 |
| Priority date | May 14, 2014 |
| Publication date | Oct 11, 2018 |
| Grant date | — |
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A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.
Opening claim text (preview).
What is claimed is: 1 . A light emitting device, comprising: a wavelength conversion layer having an upper surface and a lower surface opposite to each other; at least one light emitting unit having two electrode pads located on the same side of the light emitting unit, wherein the light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads; a reflective protecting element encapsulating the light emitting unit and a portion of the wavelength conversion layer, and exposing the two electrode pads of the light emitting unit and the lower surface of the wavelength conversion layer; and a light transmissible layer disposed on the wavelength conversion layer and located between the light emitting unit and the reflective protecting element. 2 . The light emitting device as claimed in claim 1 , wherein the light transmissible layer is further disposed between the wavelength conversion layer and the light emitting unit. 3 . The light emitting device as claimed in claim 1 , wherein the reflective protecting element comprises a reflective surface in contact with the light emitting unit. 4 . A light emitting device, comprising: a wavelength conversion layer having an upper surface and a lower surface opposite to each other; at least one light emitting unit having two electrode pads located on the same side of the light emitting unit, wherein the light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads; and a reflective protecting element encapsulating the light emitting unit and a portion of the wavelength conversion layer, and exposing the two electrode pads of the light emitting unit and the lower surface of the wavelength conversion layer, wherein the reflective protecting element includes a reflective surface, a first side of the reflective surface is in contact with the light emitting unit, and a second side of the reflective surface extends along a direction toward to the wavelength conversion layer and away from the light emitting unit. 5 . The light emitting device as claimed in claim 4 , wherein the reflective surface of the reflective protecting element is a flat surface or a curved surface. 6 . The light emitting device as claimed in claim 4 , wherein a bottom surface of the reflective protecting element and the lower surface of the wavelength conversion layer form a plane. 7 . The light emitting device as claimed in claim 4 , wherein the reflective protecting element encapsulates the wavelength conversion layer and exposes a portion of a side surface of the wavelength conversion layer. 8 . The light emitting device as claimed in claim 7 , wherein the exposed portion of the side surface of the wavelength conversion layer and a side surface of the reflective protecting element form a flat side surface of the light emitting device. 9 . The light emitting device as claimed in claim 4 , wherein the reflective protecting element exposes a first portion side surface and a second portion side surface on two different sides of the wavelength conversion layer respectively, and a thickness of the first portion side surface of the wavelength conversion layer is different from a thickness of the second portion side surface of the wavelength conversion layer. 10 . The light emitting device as claimed in claim 8 , wherein the wavelength conversion layer further comprises a low concentration fluorescent layer and a high concentration fluorescent layer, the high concentration fluorescent layer is located between the low concentration fluorescent layer and the light emitting unit. 11 . The light emitting device as claimed in claim 1 , wherein the reflective protecting element fills in a gap between the two electrode pads. 12 . The light emitting device as claimed in claim 11 , wherein the reflective protecting element completely fills the gap between the two electrode pads, and a surface of the reflective protecting element is aligned with a surface of the two electrode pads. 13 . The light emitting device as claimed in claim 1 , wherein the at least one light emitting unit is a plurality of light emitting units, the wavelength conversion layer has at least one trench located between two of the light emitting units.
the encapsulations exposing the passive side of the semiconductor body · CPC title
batch processes · CPC title
On different surfaces · CPC title
on encapsulations · CPC title
Package configurations · CPC title
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