Power semiconductor device and method of manufacturing the same, and power conversion device

Patent metadata

Field	Value
Publication number	US-2018294201-A1
Application number	US-201715858418-A
Country	US
Kind code	A1
Filing date	Dec 29, 2017
Priority date	Apr 6, 2017
Publication date	Oct 11, 2018
Grant date	—

Abstract

A power semiconductor device includes a casing, a first insulating circuit board, a second insulating circuit board, and a sealing material. The first insulating circuit board is disposed to be surrounded by the casing. The second insulating circuit board is surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board. The sealing material fills a region surrounded by the casing. The first or second insulating circuit board is provided with a hole extending from one main surface to the other main surface opposite to one main surface. From at least a portion of an inner wall surface of the casing a protrusion extending to a region overlapping the first or second insulating circuit board in a plan view extends toward the region surrounded by the casing.

First claim

What is claimed is:

1 . A power semiconductor device comprising:
a casing; a first insulating circuit board disposed so as to be surrounded by the casing; a second insulating circuit board surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board; and a sealing material which fills a region surrounded by the casing, the first or second insulating circuit board having a hole extending from one main surface to reach the other main surface opposite to the one main surface, from at least a portion of an inner wall surface of the casing a protrusion, which extends to a region overlapping the first or second insulating circuit board in a plan view, extending toward the region surrounded by the casing.

2 . The power semiconductor device according to claim 1 , further comprising an external output terminal allowing an electrical signal to be input to and output from the semiconductor element, wherein the external output terminal is buried in the casing and also disposed adjacent to the protrusion.

3 . The power semiconductor device according to claim 1 , wherein the protrusion is formed with the casing in one piece.

4 . The power semiconductor device according to claim 1 , wherein the protrusion is provided at the inner wall surface of the casing as a member distinct from the casing.

5 . The power semiconductor device according to claim 1 , wherein the second insulating circuit board and the protrusion are fixed to each other with an adhesive.

6 . The power semiconductor device according to claim 1 , wherein
from at least a portion of the inner wall surface of the casing a rested portion rested in contact with the other main surface of the first insulating circuit board extends toward the region surrounded by the casing, and the second insulating circuit board and the rested portion are fixed to each other with an adhesive.

7 . The power semiconductor device according to claim 1 , wherein
the casing in a plan view has a rectangular shape having a longer side and a shorter side, and the protrusion extends only from at least a portion of the inner wall surface on the longer side of the casing.

8 . A power semiconductor device comprising:
a casing; a first insulating circuit board disposed so as to be surrounded by the casing; a second insulating circuit board surrounded by the casing and spaced from the first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board; and a sealing material which fills a region surrounded by the casing, the casing having at least a portion with a hole extending from an outermost surface of the casing to reach an inner wall surface opposite to the outermost surface, from at least a portion of the inner wall surface of the casing a protrusion, which extends to a region overlapping the first or second insulating circuit board in a plan view, extending toward the region surrounded by the casing.

9 . A power conversion device comprising:
a main conversion circuit having a power semiconductor device according to claim 1 and configured to convert and output received power; and a control circuit configured to output to the main conversion circuit a control signal which controls the main conversion circuit.

10 . A power conversion device comprising:
a main conversion circuit having a power semiconductor device according to claim 8 and configured to convert and output received power; and a control circuit configured to output to the main conversion circuit a control signal which controls the main conversion circuit.

11 . A method of manufacturing a power semiconductor device, comprising:
joining a second insulating circuit board over one main surface of a first insulating circuit board so as to sandwich a semiconductor element between the first insulating circuit board and the second insulating circuit board; disposing the first insulating circuit board, the semiconductor element and the second insulating circuit board so as to be surrounded by a casing; and sealing the semiconductor element by supplying a sealing material to a region surrounded by the casing, forming a hole through the first or second insulating circuit board to extend from one main surface to the other main surface opposite to the one main surface, forming from at least a portion of an inner wall surface of the casing a protrusion, which extends to a region overlapping the first or second insulating circuit board in a plan view, to extend toward the region surrounded by the casing.

12 . The method of manufacturing a power semiconductor device according to claim 11 , wherein the protrusion is formed with the casing in one piece.

13 . The method of manufacturing a power semiconductor device according to claim 11 , wherein the protrusion is provided at the inner wall surface of the casing as a member distinct from the casing.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kondo Satoshi
• Kaji Yusuke

Classifications

• H10W72/07351

  characterised by changes in properties of the die-attach connectors during connecting · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H10W40/22

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H10W76/134 Primary

  having other interconnections parallel to the conductive base · CPC title

• H10W76/47

  Solid or gel fillings · CPC title