Solid-state image capturing element, manufacturing method therefor, and electronic device

Patent metadata

Field	Value
Publication number	US-2018288352-A1
Application number	US-201815995203-A
Country	US
Kind code	A1
Filing date	Jun 1, 2018
Priority date	Nov 29, 2013
Publication date	Oct 4, 2018
Grant date	—

Abstract

The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

First claim

1 . An imaging device comprising:
a semiconductor region including a photoelectric conversion region and a first conductive type region, and the photoelectric conversion region including a compound semiconductor; a first layer disposed above the semiconductor region; a first transparent electrode disposed above the first layer; wherein a charge generated from the photoelectric conversion region is transferred via the first conductive type region.

2 . The imaging device according to claim 1 , wherein the transparent electrode includes at least one of indium tin oxide, zinc oxide, or indium zinc oxide.

3 . The imaging device according to claim 1 , wherein the first layer is a film having a charge.

4 . The imaging device according to claim 1 , wherein the first layer is an insulating film.

5 . The imaging device according to claim 1 , wherein the compound semiconductor including a chalcopyrite structure.

6 . The imaging device according to claim 1 , further comprising:
a second conductive type region in the semiconductor region.

7 . The imaging device according to claim 6 , wherein a charge generated from the photoelectric conversion region is transferred via the second conductive type region.

8 . The imaging device according to claim 1 , wherein the first transparent electrode is applied a bias.

9 . The imaging device according to claim 1 , further comprising:
a metal region disposed above the first layer.

10 . The imaging device according to claim 1 , wherein the first conductive type region is p-type region.

11 . The imaging device according to claim 6 , wherein the second conductive type region is n-type region.

12 . The imaging device according to claim 6 , wherein the first conductive type region is adjacent to the second conductive type region.

13 . The imaging device according to claim 9 , wherein the metal region includes at least one of tungsten, aluminum, or copper.

14 . The imaging device according to claim 9 , wherein a portion of the metal region is disposed in a portion of the semiconductor region.

15 . The imaging device according to claim 1 , wherein the first conductive type region is connected to a ground potential.

16 . The imaging device according to claim 1 , wherein the first layer includes at least one of hafnium, aluminum, titanium, tantalum, lanthanum, yttrium, gadolinium, and zirconium.

17 . The imaging device according to claim 1 , further comprising:
a transistor; an multi-layer interconnection layer at a first side opposite to a light incident side of the semiconductor region.

18 . The imaging device according to claim 17 , wherein the imaging device is a back surface irradiation type in which the incident light is incident from a back surface side of the semiconductor substrate.

19 . The imaging device according to claim 1 , further comprising:
a color filter layer disposed above the first layer; an on-chip lens layer disposed above the color filter.

20 . An electric apparatus comprising:
an imaging device comprising: a semiconductor region including a photoelectric conversion region and a first conductive type region, and the photoelectric conversion region including a compound semiconductor; a first layer disposed above the semiconductor region; a first transparent electrode disposed above the first layer; wherein a charge generated from the photoelectric conversion region is transferred via the first conductive type region.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Oshiyama Itaru
• Takahashi Hirotsugu

Classifications

• H04N25/77 Primary

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/1463

  Electricity · mapped topic

• H01L31/022466

  Electricity · mapped topic

• H01L31/0328

  Electricity · mapped topic