Semiconductor Device Having Data Storage Pattern

Patent metadata

Field	Value
Publication number	US-2018286919-A1
Application number	US-201715671735-A
Country	US
Kind code	A1
Filing date	Aug 8, 2017
Priority date	Mar 28, 2017
Publication date	Oct 4, 2018
Grant date	—

Abstract

A semiconductor device including a data storage pattern is provided. The semiconductor device includes a first conductive line disposed on a substrate and extending in a first direction, a second conductive line disposed on the first conductive line and extending in a second direction, and a first data storage structure and a first selector structure disposed between the first conductive line and the second conductive line and connected in series. The first data storage structure includes a first lower data storage electrode, a first data storage pattern, and a first upper data storage electrode. The first lower data storage electrode includes a first portion facing the first upper data storage electrode and vertically aligned with the first upper data storage electrode. The first data storage pattern includes a first side surface and a second side surface facing each other. The first upper data storage electrode and the first portion of the first lower data storage electrode are disposed to be closer to the first side surface of the first data storage pattern than to the second side surface of the first data storage pattern.

First claim

1 . A semiconductor device, comprising:
a first conductive line disposed on a substrate and extending in a first direction, parallel to a surface of the substrate; a second conductive line disposed on the first conductive line and extending in a second direction, perpendicular to the first direction and parallel to the surface of the substrate; and a first data storage structure and a first selector structure disposed between the first conductive line and the second conductive line and connected in series, wherein the first data storage structure includes a first lower data storage electrode, a first data storage pattern disposed on the first lower data storage electrode, and a first upper data storage electrode disposed on the first data storage pattern, the first lower data storage electrode includes a first portion facing the first upper data storage electrode and vertically aligned with the first upper data storage electrode, the first data storage pattern includes a first side surface and a second side surface facing each other, and the first upper data storage electrode and the first portion of the first lower data storage electrode are disposed to be closer to the first side surface of the first data storage pattern than to the second side surface of the first data storage pattern.

2 . The semiconductor device of claim 1 , wherein the first lower data storage electrode includes a second portion extending from a bottom of the first portion in the first direction, and
the first data storage pattern is in contact with the first portion of the first lower data storage electrode and spaced apart from the second portion of the first lower data storage electrode.

3 . The semiconductor device of claim 2 , wherein the first data storage pattern overlaps the second portion.

4 . The semiconductor device of claim 1 , wherein the first portion of the first lower data storage electrode has a width in the first direction and a length in the second direction greater than the width in the first direction.

5 . The semiconductor device of claim 4 , wherein the first upper data storage electrode has the same width in the first direction and the same length in the second direction as the first portion of the first lower data storage electrode.

6 . The semiconductor device of claim 1 , wherein the first selector structure has a first side surface and a second side surface opposed to each other, and
the first upper data storage electrode is disposed to be closer to the first side surface of the first selector structure than to the second side surface of the first selector structure.

7 . The semiconductor device of claim 6 , wherein the first selector structure includes a first lower selector electrode, a first selector pattern, and a first upper selector electrode, sequentially arranged in a direction perpendicular to the surface of the substrate, and
the first lower selector electrode is a threshold switching device.

8 . The semiconductor device of claim 1 , further comprising:
a third conductive line disposed on the second conductive line and overlapping the first conductive line; and a second data storage structure and a second selector structure interposed between the second conductive line and the third conductive line and connected in series.

9 . The semiconductor device of claim 8 , wherein the second data storage structure includes a second lower data storage electrode, a second data storage pattern disposed on the second lower data storage electrode, and a second upper data storage electrode disposed on the second data storage pattern,
the second lower data storage electrode includes a first portion facing the second upper data storage electrode and vertically aligned with the second upper data storage electrode, and
the first portion of the second lower data storage electrode has the same width in the second direction and the same length in the first direction as the second upper data storage electrode.

10 . The semiconductor device of claim 9 , wherein the first lower data storage electrode includes a second portion extending from a bottom of the first portion of the first lower data storage electrode in the first direction, and
the second lower data storage electrode includes a second portion extending from a bottom of the first portion of the second lower data storage electrode in the second direction.

11 . The semiconductor device of claim 9 , wherein the first data storage pattern includes a first data storage region in contact with the first lower data storage electrode, and
the second data storage pattern includes a second data storage region in contact with the second upper data storage electrode.

12 . A semiconductor device, comprising:
a first conductive line disposed on a substrate and extending in a first direction, parallel to a surface of the substrate; a second conductive line disposed on the first conductive line and extending in a second direction, perpendicular to the first direction and parallel to the surface of the substrate; and a first data storage structure interposed between the first conductive line and the second conductive line, wherein the first data storage structure includes a first lower data storage electrode, a first data storage pattern, and a first upper data storage electrode, sequentially arranged in a direction perpendicular to the surface of the substrate, the first data storage pattern includes a first side surface and a second side surface facing each other, and the first upper data storage electrode is disposed closer to the first side surface of the first data storage pattern than to the second side surface of the first data storage pattern.

13 . The semiconductor device of claim 12 , wherein the first upper data storage electrode and the first lower data storage electrode face each other, and
facing surfaces of the first upper data storage electrode and the first lower data storage electrode have the same size.

14 . The semiconductor device of claim 12 , further comprising:
a third conductive line disposed on the second conductive line and overlapping the first conductive line; and a second data storage structure interposed between the second conductive line and the third conductive line, wherein the second data storage structure includes a second lower data storage electrode, a second data storage pattern, and a second upper data storage electrode, sequentially arranged in a direction perpendicular to the surface of the substrate, the first lower data storage electrode includes a first portion in contact with the first data storage pattern and a second portion extending from a bottom of the first portion and in contact with the first conductive line in the first direction, the second lower data storage electrode includes a first portion in contact with the second data storage pattern and a second portion extending from a bottom of the first portion in the second direction and in contact with the second conductive line, and widths in the first direction of the first upper data storage electrode and the first portion of the first lower data storage electrode are the same as widths in the second direction of the second upper data storage electrode and the first portion the second lower data storage electrode.

15 . The semiconductor device of claim 14 , further comprising:
a first selector structure interposed between the first data storage structure and the second conductive line; and a second selector structure interposed between the second data storage structure and the third conductive line, wherein the first and se

Assignees

• Samsung Electronics Co Ltd

Inventors

• Terai Masayuki

Classifications

• H01L45/1683

  Electricity · mapped topic

• H01L27/2427

  Electricity · mapped topic

• H01L27/249 Primary

  Electricity · mapped topic

• H01L45/126

  Electricity · mapped topic

• H01L45/065

  Electricity · mapped topic