Sputtering target

Patent metadata

Field	Value
Publication number	US-2018286646-A1
Application number	US-201815935605-A
Country	US
Kind code	A1
Filing date	Mar 26, 2018
Priority date	Mar 29, 2017
Publication date	Oct 4, 2018
Grant date	—

Abstract

A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

First claim

1 . A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

2 . The sputtering target according to claim 1 , wherein the position where the erosion concentrates most intensively is a part with a maximum horizontal magnetic field strength during sputtering.

3 . The sputtering target according to claim 1 ,
wherein the sputtering face has a circular shape, and the ramp is formed at a position in a range of 60% or more and less than 90% of a diameter of the sputtering face so as to reduce the thickness of the target material toward a peripheral part of the sputtering face in the radical direction of the sputtering face.

4 . The sputtering target according to claim 3 , wherein the target material includes a flat circular first region positioned at a center of the sputtering face, a flat ring-shaped second region positioned around the first region, and a flat ring-shaped third region positioned around the second region,
wherein the ramp exists between the second region and the third region, and a thickness of the third region is smaller than a thickness of the second region; wherein the thickness of the third region is equal to or larger than a thickness of the first region and a diameter of the first region accounts for 14% or more and less than 60% of the diameter of the sputtering face; and wherein an inner diameter of the third region accounts for less than 90% of the diameter of the sputtering face.

5 . The sputtering target according to claim 4 , wherein a ratio of the thickness of the third region to a ring width of the third region is in a range of 0.1 to 1.1.

6 . The sputtering target according to claim 5 , wherein the ratio is in a range of 0.1 to 0.6.

7 . The sputtering target according to claim 1 , wherein the sputtering face has a circular shape, and the ramp is formed at a position in a range of 14% or more and less than 60% of a diameter of the sputtering face so as to reduce the thickness of the target material toward an inner part of the sputtering face in the radial direction of the sputtering face.

Assignees

• Sumitomo Chemical Co

Inventors

• Kuroda Toshiaki
• Takigawa Mikio

Classifications

• H01J37/3405

  Magnetron sputtering · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• H01J37/3426

  Material · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title