Miniature electric field detector

Patent metadata

Field	Value
Publication number	US-2018284175-A1
Application number	US-201815944106-A
Country	US
Kind code	A1
Filing date	Apr 3, 2018
Priority date	Apr 4, 2017
Publication date	Oct 4, 2018
Grant date	—

Abstract

Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.

First claim

What is claimed is:

1 . An electric field detector comprising:
a proof mass; a source of concentrated charge coupled to the proof mass; a substrate having a substrate offset space defined therein, wherein the proof mass is suspended above the substrate offset space; a first sense electrode disposed on the substrate within the substrate offset space and positioned proximate the proof mass, the first sense electrode being configured to measure a change in capacitance relative to the proof mass from torsional movement of the proof mass in response to a received electric field at the source of concentrated charge; and a control circuit coupled to the first sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.

2 . The electric field detector of claim 1 , further comprising a counterbalance coupled to the proof mass, wherein the source of concentrated charge is coupled to a first surface of the proof mass and the counterbalance is coupled to a second distal surface of the proof mass.

3 . The electric field detector of claim 1 , further comprising a second sense electrode coupled to the control circuit, wherein the second sense electrode is disposed on the substrate, and wherein the first sense electrode and the second sense electrode are configured to provide a differential capacitance measurement based on the change in capacitance from torsional movement of the proof mass.

4 . The electric field detector of claim 1 , further comprising at least one drive electrode coupled to the control circuit and positioned proximate the proof mass, wherein the at least one drive electrode is configured to produce a feedback torque on the proof mass.

5 . The electric field detector of claim 4 , wherein the at least one drive electrode is positioned on the substrate and within the substrate offset space.

6 . The electric field detector of claim 5 , further comprising a plurality of guard rings, each guard ring positioned to substantially surround a corresponding one of the first sense electrode or the at least one drive electrode.

7 . The electric field detector of claim 1 , wherein the source of concentrated charge is an electret.

8 . The electric field detector of claim 1 , further comprising at least one support coupled to the proof mass and configured to suspend the proof mass above the substrate offset space.

9 . The electric field detector of claim 8 , further comprising a structure wafer, wherein at least the proof mass and the at least one support are defined in the structure wafer.

10 . The electric field detector of claim 9 , wherein the structure wafer is a Silicon-on-Insulator (SOI) wafer having a flexure layer, a handle layer, and an oxide layer, the oxide layer being interposed between the flexure layer and the handle layer, and wherein the proof mass and the at least one support are defined in the flexure layer.

11 . The electric field detector of claim 1 , further comprising a levitation suspension system configured to levitate the proof mass relative to the substrate.

12 . The electric field detector of claim 11 , wherein the levitation suspension system includes at least one levitation forcer positioned proximate the proof mass and configured to apply a force to maintain the proof mass at a null point, and wherein the at least one levitation forcer is an electrostatic forcer or a magnetic forcer.

13 . The electric field detector of claim 1 , further comprising an auxiliary sensor coupled to the control circuit and configured to measure an external parameter, the external parameter including at least one of noise, a vibration, and an ambient temperature, and wherein the control circuit is configured to adjust the characteristic of the electric field to compensate for an effect of the measured external parameter on the characteristic of the electric field.

14 . The electric field detector of claim 13 , wherein the control circuit includes a preamplifier, a demodulator, and a baseband filter, and wherein the preamplifier is configured to provide a carrier signal amplitude-modulated by the electric field and the demodulator is configured to receive the amplitude-modulated carrier signal, and wherein the baseband filter is configured to extract the characteristic of the electric field from an output of the demodulator.

15 . The electric field detector of claim 1 , wherein the control circuit is further configured to apply a bias voltage and create a negative spring force on the proof mass.

16 . An electric field transduction method comprising:
generating an electric charge distribution on a proof mass, the proof mass being suspended above a substrate offset space in a substrate relative to a first sense electrode disposed on the substrate; measuring a change in capacitance between the first sense electrode and the proof mass from torsional movement of the proof mass in response to receiving an electric field at the proof mass; and determining a characteristic of the electric field based on the measured change in capacitance.

17 . The method of claim 16 , further comprising providing a differential capacitance measurement from the first sense electrode and a second sense electrode based on the change in capacitance from the torsional movement of the proof mass.

18 . The method of claim 17 , further comprising suspending the proof mass relative to the first sense electrode with at least one of one or more supports, one or more rotational bearings, an electrostatic suspension, or a magnetic suspension.

19 . The method of claim 16 , further comprising providing a feedback torque on the proof mass with one or more drive electrodes positioned proximate the proof mass.

20 . The method of claim 16 , wherein generating the electric charge distribution on the proof mass includes forming a static electric dipole with an electret.

21 . A method for fabricating an electric field detector comprising:
defining at least one substrate offset space in a substrate wafer; forming a first sense electrode on the substrate wafer and within the substrate offset space; defining a proof mass and at least one support in a structure wafer and suspending the proof mass by the at least one support to allow torsional movement of the proof mass; providing a source of concentrated charge on the proof mass; and coupling the substrate wafer and the structure wafer to position the proof mass proximate the substrate offset space of the substrate wafer and within capacitive communication with at least the first sense electrode.

22 . The method of claim 21 , further comprising providing the structure wafer, wherein the structure wafer includes a flexure layer, a handle layer, and an oxide layer, the oxide layer being interposed between the flexure layer and the handle layer, and wherein defining the proof mass and the at least one support in the structure wafer includes etching the flexure layer to form the proof mass and the at least one support.

23 . The method of claim 22 , further comprising applying a metallic layer to one or more holes defined in the flexure layer to electrically couple the flexure layer and the handle layer of the structure wafer.

24 . The method of claim 21 , further comprising forming a second sense electrode, a first drive electrode, and a second drive electrode on the substrate wafer and within the substrate offset space.

Assignees

• Charles Stark Draper Laboratory Inc

Inventors

• Bickford James A
• Golmon Stephanie Lynne
• Ward Paul A
• Sawyer William D
• Weinberg Marc S
• Leblanc John J
• Kratchman Louis
• Pringle Jr James S
• Freeman Daniel
• Duwel Amy
• Turnquist Max Lindsay
• Mcnabb Jr Ronald Steven
• Lenk William A

Classifications

• G01R33/1261

  using levitation techniques · CPC title

• A61B5/04

  Human Necessities · mapped topic

• G01R1/04

  Housings; Supporting members; Arrangements of terminals · CPC title

• G01R29/0878

  Sensors; antennas; probes; detectors (wave guide measuring sections G01R1/24) · CPC title

• G01R29/12 Primary

  Measuring electrostatic fields {or voltage-potential} · CPC title